onsemi FJE3303H2TU

Overview

FJE3303H2TU from ON Semiconductor is a high-voltage, fast-switching NPN power transistor in TO-126 package, rated for 400 V V_CEO, 1.5 A DC collector current, and 20 W power dissipation at T_C = 25°C. It delivers h_FE of 14–21 at I_C = 1.0 A and exhibits t_ON/t_STG/t_F of 1.1 µs / 4.0 µs / 0.7 µs under resistive load switching conditions, targeting electronic ballast and offline switching regulator applications.

For engineers reviewing the FJE3303H2TU datasheet, pinout, applications, or equivalent options, key selection considerations include its H2-grade h_FE bin (14–21), 700 V V_CBO rating, low V_CE(sat) of 1.0 V at I_C = 1.0 A / I_B = 0.25 A, and TO-126 thermal performance with 150°C maximum junction temperature.

Technical Context

The FJE3303H2TU is a silicon bipolar junction transistor optimized for high-voltage switching in inductive and capacitive load environments. Its design emphasizes robust safe operating area (SOA) under both forward- and reverse-biased conditions, with pulse-rated collector current up to 3 A and storage time (t_STG) tightly controlled at 4.0 µs for predictable turn-off behavior.

It operates with base-driven control logic requiring precise I_B biasing-0.25 A base drive sustains 1.0 A collector current with V_CE(sat) ≤ 1.0 V-and supports operation across −65°C to +150°C ambient range. The device's 4 MHz f_T and 21 pF C_ob reflect trade-offs between speed and voltage capability typical of high-V_CEO power transistors.

Key Specifications

Pinout & Package

Package: TO-126 (standard leaded power plastic package with integral heat slug; pin 2 is collector tab, electrically connected to case). Dimensions per MKT-TO126AArev2 drawing: 14.20 mm max length, 11.20 mm max width, 3.45–4.05 mm terminal length "D", 6.45–7.45 mm terminal length "E" for TSSTU variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Compared with FJE3303H2TU, FJP13009H2TU offers higher current headroom at the cost of larger size and slower storage time, while MJD13009-GR provides SMT compatibility but reduced thermal robustness and unguaranteed h_FE binning-making FJE3303H2TU optimal for through-hole, thermally demanding 20–50 kHz ballast and SMPS designs.

Availability

FJE3303H2TU is available at Aetrix Electronics and suitable for electronic ballast control, offline switching regulator design, induction heating driver implementation, and brushed DC motor commutation requiring stable component supply and legacy-design continuity.

Supply support for FJE3303H2TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The FJE3303H2TU belongs to ON Semiconductor's legacy high-voltage bipolar power transistor family, originally developed by Fairchild Semiconductor for lighting and power conversion applications demanding ruggedness, predictable gain, and fast switching at 400–700 V levels.

FAQ

What is the h_FE range guaranteed for FJE3303H2TU?

The FJE3303H2TU is binned to the H2 classification, guaranteeing a DC current gain (h_FE) of 14 to 21 when measured at V_CE = 2 V and I_C = 1.0 A. This tight binning ensures consistent base drive requirements across units, which is essential for reliable operation in electronic ballast feedback loops and fixed-gain switching regulators. The FJE3303H2TU datasheet confirms this specification under Electrical Characteristics on page 2.

Is FJE3303H2TU still in active production?

No, the FJE3303H2TU is marked as DISCONTINUED in official ON Semiconductor documentation, with explicit notice stating "THIS DEVICE IS NOT AVAILABLE." While limited legacy stock may exist, Aetrix Electronics provides traceable sourcing and lifecycle coordination support for customers maintaining existing designs. For new designs, ON Semiconductor recommends evaluating functionally aligned alternatives such as FJP13009H2TU or MJD13009-GR.

What is the maximum allowable junction temperature for FJE3303H2TU?

The FJE3303H2TU has a maximum junction temperature (T_J) rating of 150°C, as specified in its Absolute Maximum Ratings table. This limit must be respected under all operating conditions-including pulsed and continuous modes-to prevent thermal runaway or permanent degradation. Derating curves in Figure 9 of the FJE3303H2TU datasheet show that power dissipation must decrease linearly above 25°C case temperature, reaching zero at 150°C.

Can FJE3303H2TU be used in avalanche mode?

No, the FJE3303H2TU is not rated or characterized for repetitive avalanche operation. Its Safe Operating Area (SOA) curves (Figures 7 and 8) define only forward- and reverse-biased switching boundaries-not energy-rated avalanche capability. Using the FJE3303H2TU in unclamped inductive switching without external protection risks secondary breakdown and immediate failure. Designers must implement snubbers or clamp circuits to limit V_CE transients.

What is the collector-to-emitter saturation voltage of FJE3303H2TU at rated current?

The FJE3303H2TU specifies V_CE(sat) = 1.0 V maximum at I_C = 1.0 A and I_B = 0.25 A, per its Electrical Characteristics table. This value reflects the voltage drop across the saturated transistor under typical ballast operating conditions and directly impacts conduction loss-e.g., 1.0 W loss at 1.0 A. At higher current (I_C = 1.5 A / I_B = 0.5 A), V_CE(sat) rises to 3.0 V max, confirming strong dependence on sufficient base overdrive.