My Inquiry
My Account
onsemi FJI5603DTU
- Part No.:
- FJI5603DTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
FJI5603DTU.pdf
- Description:
- TRANS NPN 800V 3A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,334
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FJI5603DTU from ON Semiconductor is a high-voltage NPN silicon power transistor with built-in free-wheeling diode, rated for 800 V VCEO, 3 A DC collector current, and 100 W power dissipation at TC = 25°C. It delivers fast switching (tSTG as low as 0.8 μs under inductive load) and wide safe operating area, targeting electronic ballast and high-voltage AC-DC power switch applications.
For engineers reviewing the FJI5603DTU datasheet, pinout, applications, or equivalent options, key selection criteria include its 1600 V VCBO, integrated diode forward voltage (VF = 0.76–1.20 V at IF = 0.4 A), storage time consistency, and TO-262 (I2PAK) thermal performance (RθJC = 1.25°C/W).
Technical Context
The FJI5603DTU is a monolithic NPN bipolar junction transistor optimized for high-voltage, medium-current switching in inductive and resistive loads. Its design integrates a co-packaged freewheeling diode to suppress flyback voltage during turn-off, reducing external component count in flyback and resonant converter topologies.
It operates with DC base drive up to 2 A and supports pulsed base currents up to 4 A, enabling robust gate-driving of downstream MOSFETs or direct use in low-frequency (<5 MHz fT) hard-switched circuits. Thermal management relies on case-mounted heatsinking due to its 1.25°C/W junction-to-case resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 800 V - Enables use in 400 VAC rectified bus and 600 V DC link applications without derating. |
| IC (DC) | 3 A - Supports continuous output power up to ~2.4 kW in Class-D audio or ballast drivers with proper heatsinking. |
| PC (TC = 25°C) | 100 W - Requires minimum copper pad and forced-air or heatsink mounting for sustained operation. |
| RθJC | 1.25°C/W - Allows precise junction temperature estimation when case temperature is monitored. |
| tSTG (inductive) | 0.8–1.2 μs - Minimizes energy loss during turn-off in 20–100 kHz electronic ballasts. |
| VF (diode) | 0.76–1.20 V @ 0.4 A - Reduces conduction loss versus discrete diode solutions in snubberless designs. |
| hFE | 20–35 @ IC = 0.4 A - Supports simple fixed-base-drive biasing without complex feedback compensation. |
Pinout & Package
Package: TO-262 (I2PAK), 3-lead, surface-mountable with isolated tab (collector-connected). Mounting requires thermal interface material and mechanical clamping or screw-down to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input | Accepts DC or pulsed base current up to 2 A (DC) / 4 A (pulse); requires series resistor for current limiting. |
| 2 (Collector) | Main power output / heatsink connection | Electrically connected to metal tab; must be isolated from chassis unless circuit ground reference permits. |
| 3 (Emitter) | Power return / common emitter node | Serves as reference for base drive and load return; low-inductance layout critical for switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in freewheeling diode | Eliminates need for external catch diode in inductive switching circuits, reducing BOM count and PCB area. |
| Wide Safe Operating Area (SOA) | Supports simultaneous high VCE and IC during transient overload, improving reliability in lamp ignition surges. |
| Small variance in storage time | Ensures consistent switching timing across temperature (25°C to 125°C) and unit-to-unit, critical for multi-lamp ballast synchronization. |
| High VCBO (1600 V) | Provides margin against voltage spikes in unclamped inductive turn-off, reducing need for snubbers in cost-sensitive lighting designs. |
Applications
| Electronic Ballast Control | AC-DC Power Switch |
|---|---|
Use Scenario: Driving resonant LC tank in fluorescent lamp ballasts operating at 20–60 kHz. IC Role / Device Role / Timing Role: Main switching transistor handling 400 VDC bus and lamp ignition transients. Use Value: Integrated diode enables snubberless operation; tight tSTG tolerance ensures stable lamp starting across temperature. | Use Scenario: High-voltage DC-DC converter primary-side switch in industrial power supplies. IC Role / Device Role / Timing Role: Hard-switched NPN power switch controlling energy transfer into transformer primary. Use Value: 800 V VCEO and 100 W power rating support 360–400 VDC input with margin; SOA withstands startup surges. |
| Induction Heating Driver | Motor Start Circuit |
Use Scenario: Low-frequency (1–20 kHz) half-bridge switch in domestic induction cooktops. IC Role / Device Role / Timing Role: Medium-speed power switch managing coil current commutation with freewheel path. Use Value: Built-in diode handles reverse recovery current; 1.25°C/W RθJC enables compact heatsink integration. | Use Scenario: Single-pole starter switch for universal motors in power tools and appliances. IC Role / Device Role / Timing Role: High-voltage relay replacement handling 120/240 VAC motor inrush and back-EMF. Use Value: 1600 V VCBO prevents breakdown during motor turn-off spikes; rugged SOA tolerates stall conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-voltage power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST13007D | Lower VCEO (400 V), no integrated diode, TO-220 package, RθJC = 2.5°C/W. | Requires external freewheeling diode and larger heatsink; suitable only for ≤250 VDC bus designs. | Select when cost sensitivity outweighs board space and thermal constraints; verify diode placement and SOA derating. |
| BU508AF | Higher VCEO (1000 V), no integrated diode, TO-3P package, RθJC = 1.0°C/W, slower tSTG (≥2.5 μs). | Better voltage margin but lacks integrated diode; requires more layout area and higher base drive power. | Prefer for ultra-high-voltage flyback converters where diode integration is not required and thermal budget is tighter. |
Compared with ST13007D and BU508AF, the FJI5603DTU uniquely combines 800 V rating, integrated diode, and sub-1.2 μs inductive storage time in a thermally efficient TO-262 package-making it optimal for compact, high-reliability electronic ballasts and AC-DC switchers where BOM reduction and timing consistency are critical.
Availability
FJI5603DTU is available at Aetrix Electronics and suitable for electronic ballast control, AC-DC power switching, and induction heating driver applications requiring stable component supply and long-term industrial availability.
Supply support for FJI5603DTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic devices for automotive, industrial, cloud power, and IoT applications.
The FJI5603DTU belongs to Fairchild's legacy high-voltage bipolar transistor family, designed specifically for cost-effective, reliable switching in lighting ballasts and industrial power conversion where integrated diode functionality and SOA robustness are essential.
FAQ
What is the maximum junction temperature rating for the FJI5603DTU?
The FJI5603DTU has a maximum junction temperature (TJ) rating of 150°C, as specified in its Absolute Maximum Ratings table. This limit must not be exceeded during operation-even transiently-to ensure long-term reliability. Derating curves in the datasheet show allowable power dissipation versus case temperature, and thermal design must account for RθJC = 1.25°C/W and system-level RθCA to maintain FJI5603DTU junction temperature below 150°C under worst-case ambient and load conditions.
Does the FJI5603DTU require an external freewheeling diode in inductive load applications?
No, the FJI5603DTU does not require an external freewheeling diode because it integrates a co-packaged diode with forward voltage VF = 0.76–1.20 V at IF = 0.4 A. This built-in diode provides the necessary path for inductive current decay during transistor turn-off, simplifying circuit design in applications like electronic ballasts and motor starters. However, designers must verify that the internal diode's current and energy ratings meet the specific inductive load requirements of their FJI5603DTU implementation.
What is the typical storage time (tSTG) of the FJI5603DTU under inductive switching conditions?
The typical storage time (tSTG) of the FJI5603DTU is 0.8–1.2 μs under inductive load conditions (IC = 0.3–0.5 A, VZ = 300 V, LC = 200 μH, TJ = 25–125°C). This tightly controlled parameter ensures predictable turn-off behavior across temperature and unit variation-critical for synchronized multi-lamp ballasts and noise-sensitive power converters. The FJI5603DTU datasheet confirms this value in both "Resistive Load Switching" and "Inductive Load Switching" sections.
Can the FJI5603DTU be used in place of a MOSFET in high-voltage switching applications?
The FJI5603DTU can replace certain MOSFETs in medium-frequency (<100 kHz), high-voltage linear or hard-switched applications-but with important trade-offs. Unlike MOSFETs, the FJI5603DTU requires significant base drive current (up to 2 A DC), exhibits lower input impedance, and has higher conduction losses at high currents due to VCE(sat) (1.20–2.50 V). However, its rugged SOA and integrated diode offer advantages in surge-prone or space-constrained designs where FJI5603DTU's bipolar architecture delivers better transient immunity than similarly rated MOSFETs.
What package type is used for the FJI5603DTU, and how is thermal management implemented?
The FJI5603DTU uses the TO-262 (I2PAK) package-a 3-lead surface-mount variant with an isolated metal tab electrically connected to the collector. Thermal management relies on mounting the tab directly to a heatsink using thermal interface material and mechanical clamping or screws. With RθJC = 1.25°C/W, effective heatsinking is mandatory to sustain its 100 W power dissipation rating; PCB copper area alone is insufficient. Layout must minimize thermal resistance between FJI5603DTU tab and heatsink while maintaining electrical isolation where required.
FJI5603DTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 800 V
- Vce Saturation (Max) @ Ib, Ic:
- 2.5V @ 200mA, 1A
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 400mA, 3V
- Power - Max:
- 100 W
- Frequency - Transition:
- 5MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262 (I2PAK)
FJI5603DTU FAQ
1.How can I place an order for FJI5603DTU through Aetrix?
Please submit a Request for Quotation (RFQ) for FJI5603DTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJI5603DTU reliable?
The price and inventory of FJI5603DTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJI5603DTU is usually 5 days.
3.What payment methods are accepted for FJI5603DTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJI5603DTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJI5603DTU?
FJI5603DTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJI5603DTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJI5603DTU?
For technical support, including FJI5603DTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJI5603DTU requirements.
6.How does Aetrix verify that FJI5603DTU is sourced from the original manufacturer or authorized distributors?
All FJI5603DTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJI5603DTU meets industry standards.
7.What is the process for return or replacement of FJI5603DTU?
All FJI5603DTU units undergo pre-shipment inspection (PSI). If there is an issue with FJI5603DTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJI5603DTU part is unused and in its original packaging.
Return procedure for FJI5603DTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FJI5603DTU Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
