Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP13007

Name: FJP13007
Brand: onsemi
SKU: FJP13007
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: FJP13007

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP13007.pdf

Description:: TRANS NPN 400V 8A TO-220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,686

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

FJP13007 from onsemi is a high-voltage fast-switching NPN power transistor rated for 400 V V_CEO, 8 A DC collector current, and 80 W power dissipation at T_C = 25°C; it delivers 4 MHz f_T, 1.0 V V_CE(sat) at I_C = 2 A/I_B = 0.4 A, and sub-μs switching (t_ON = 1.6 μs, t_F = 0.7 μs), used in electronic ballast and SMPS primary-side switching.

For engineers reviewing the FJP13007 datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-220 package thermal performance, safe operating area under inductive switching, V_CEO/V_CBO margin for flyback snubbing, and h_FE classification (H1/H2) impact on base drive design.

Technical Context

This device operates as a single NPN bipolar junction transistor with fixed three-terminal topology (Base–Collector–Emitter), optimized for high-voltage hard-switching where voltage overshoot control and turn-off speed are critical. Its 400 V V_CEO rating and 700 V V_CBO support operation in 380 V DC bus applications with margin for transient spikes.

The FJP13007 exhibits nonlinear h_FE behavior-8–60 at I_C = 2 A, dropping to 5–30 at I_C = 5 A-requiring careful base current sizing across load range; its 110 pF C_ob and 4 MHz f_T define bandwidth limits in gate-drive-isolated switch-mode topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Withstands 400 V collector-emitter blocking voltage before breakdown, enabling use in 380 V DC-link SMPS stages.
I_C (DC)	8 A - Maximum continuous collector current at T_C = 25°C; derates linearly above 25°C per Fig. 8.
P_C	80 W - Max collector power dissipation at case temperature 25°C; requires heatsink for >10 W sustained operation.
f_T	4 MHz - Current-gain bandwidth product; sets upper limit on small-signal amplification or high-frequency switching fidelity.
t_ON/t_F	1.6 μs / 0.7 μs - Turn-on and fall times under 125 V, 5 A resistive-switching test; defines minimum practical switching period.
C_ob	110 pF - Output capacitance at V_CB = 10 V; contributes to switching loss and EMI in hard-switched converters.
h_FE (I_C=2 A)	8–60 - Wide DC current gain spread; H1/H2 variants specify tighter ranges (15–28 / 26–39) for predictable base drive.

Pinout & Package

Package: TO-220 3L (dual or single gauge variant depending on suffix; standard pinout applies to all).

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Base	Current-controlled input terminal; requires ≥0.4 A drive for 2 A collector conduction, with V_BE(sat) = 1.2 V.
2 (Center)	Collector	Main high-current, high-voltage output terminal; electrically connected to TO-220 metal tab for heatsinking.
3 (Right)	Emitter	Low-side return path; common reference for base drive and load current; isolated from heatsink in standard mounting.

Key Features

Feature	Design Value
High-voltage capability	700 V V_CBO enables robust operation in 400 V-class systems with margin for voltage transients and ringing.
Fast switching	Sub-microsecond t_ON/t_F (1.6 μs / 0.7 μs) reduces switching losses in 20–100 kHz SMPS designs.
Controlled h_FE classification	H1 (15–28) and H2 (26–39) variants allow precise base drive sizing without overdesign or saturation risk.
Thermal robustness	150°C max junction temperature and defined power derating curve support reliable operation with passive/active heatsinking.

Applications

Electronic Ballast	Switch-Mode Power Supply
Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems. IC Role / Device Role / Timing Role: Primary-side power switch driving resonant LC tank at 20–60 kHz. Use Value: 400 V V_CEO withstands lamp open-circuit voltage spikes; fast t_F ensures clean zero-crossing control.	Use Scenario: Primary-side switching in offline flyback or forward converters delivering 50–200 W. IC Role / Device Role / Timing Role: Main energy-transfer switch turning on/off 50–100 kHz square wave across transformer primary. Use Value: 80 W P_C and SOA curves (Fig. 6/7) support safe operation under inductive turn-off stress and overload conditions.
DC-AC Inverter Stage	Induction Heating Driver
Use Scenario: Half-bridge leg in low-kW inverter for motor drives or UPS output stage. IC Role / Device Role / Timing Role: High-side or low-side switching element in hard-switched bridge configuration. Use Value: 700 V V_CBO provides headroom against shoot-through-induced voltage spikes during commutation.	Use Scenario: Resonant tank switching in medium-frequency (20–100 kHz) induction cooktops. IC Role / Device Role / Timing Role: Series-resonant power switch handling high di/dt and repetitive avalanche stress. Use Value: Defined reverse-biased SOA (Fig. 7) and 150°C T_J rating enable stable operation under high thermal cycling.

Electronic Ballast

Switch-Mode Power Supply

Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems.

IC Role / Device Role / Timing Role: Primary-side power switch driving resonant LC tank at 20–60 kHz.

Use Value: 400 V V_CEO withstands lamp open-circuit voltage spikes; fast t_F ensures clean zero-crossing control.

Use Scenario: Primary-side switching in offline flyback or forward converters delivering 50–200 W.

IC Role / Device Role / Timing Role: Main energy-transfer switch turning on/off 50–100 kHz square wave across transformer primary.

Use Value: 80 W P_C and SOA curves (Fig. 6/7) support safe operation under inductive turn-off stress and overload conditions.

DC-AC Inverter Stage

Induction Heating Driver

Use Scenario: Half-bridge leg in low-kW inverter for motor drives or UPS output stage.

IC Role / Device Role / Timing Role: High-side or low-side switching element in hard-switched bridge configuration.

Use Value: 700 V V_CBO provides headroom against shoot-through-induced voltage spikes during commutation.

Use Scenario: Resonant tank switching in medium-frequency (20–100 kHz) induction cooktops.

IC Role / Device Role / Timing Role: Series-resonant power switch handling high di/dt and repetitive avalanche stress.

Use Value: Defined reverse-biased SOA (Fig. 7) and 150°C T_J rating enable stable operation under high thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJE13007	Same V_CEO (400 V), I_C (8 A), TO-220 package; slightly lower f_T (3 MHz vs. 4 MHz) and higher V_CE(sat) (1.5 V @ 2 A).	Compatible in ballast and SMPS but may require larger base drive due to lower h_FE consistency.	Select when legacy MJE13007 footprint compatibility is required and minor speed reduction is acceptable.
ST13007	Identical absolute ratings (400 V/8 A/80 W); same TO-220 pinout; h_FE min 8 at I_C = 2 A, but no H1/H2 classification.	Drop-in replacement in non-critical base-drive designs; lacks guaranteed h_FE binning for precision drive.	Choose for cost-sensitive, non-automotive SMPS where h_FE variation can be accommodated by over-designed base circuit.

Compared with MJE13007 and ST13007, the FJP13007 offers superior switching speed (4 MHz f_T, 0.7 μs t_F) and factory-binned h_FE (H1/H2), enabling tighter base drive control and lower switching loss in high-efficiency ballast and SMPS designs.

Availability

FJP13007 is available at Aetrix Electronics and suitable for electronic ballast, switch-mode power supply, and DC-AC inverter applications requiring stable component supply despite its discontinued status for new designs.

Supply support for FJP13007 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and logic.

The FJP13007 belongs to onsemi's high-voltage bipolar power transistor family, engineered specifically for reliability-critical line-powered switching applications including lighting and industrial power conversion.

FAQ

What is the maximum collector-emitter voltage rating for the FJP13007?

The FJP13007 has a V_CEO rating of 400 V, meaning it can block up to 400 V between collector and emitter with base open. This rating is confirmed in the Absolute Maximum Ratings table and supports use in 380 V DC bus applications with safety margin. The FJP13007 also features a higher 700 V V_CBO rating for collector-base blocking.

Is the FJP13007 still recommended for new designs?

No-the official onsemi documentation explicitly states "DISCONTINUED / THIS DEVICE IS NOT RECOMMENDED FOR NEW DESIGN." While FJP13007 remains available for legacy production and repair, new designs should evaluate alternatives like MJE13007 or ST13007, and consult onsemi for qualified replacements. The FJP13007 datasheet revision 2 (September 2017) retains this notice.

What are the pin assignments for the FJP13007 in TO-220 package?

The FJP13007 uses standard TO-220 3L pinout: Pin 1 (left, when face-up with leads down) is Base, Pin 2 (center) is Collector (connected to metal tab), and Pin 3 (right) is Emitter. This layout is consistent across all FJP13007 variants (TU, H1TU, H2TU) and matches industry-standard NPN TO-220 orientation.

How does h_FE classification affect FJP13007 selection?

The FJP13007 is offered in H1 (h_FE = 15–28) and H2 (h_FE = 26–39) variants, enabling precise base drive design. Selecting the correct variant avoids overdriving (wasting power) or underdriving (causing excessive V_CE(sat)). The FJP13007H1TU and FJP13007H2TU part numbers denote these binned versions, critical for stable operation in production.

What thermal derating applies to the FJP13007?

The FJP13007's 80 W power dissipation is specified at T_C = 25°C; Figure 8 shows linear derating to zero at 150°C case temperature. For example, at T_C = 100°C, allowable P_C drops to ~45 W. Effective heatsinking is essential-thermal resistance from junction-to-case is 1.56°C/W, so board layout and mounting torque directly impact FJP13007 reliability.

FJP13007 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 8 @ 2A, 5V

Power - Max:: 80 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP13007 FAQ

1.How can I place an order for FJP13007 through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP13007 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP13007 reliable?

The price and inventory of FJP13007 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP13007 is usually 5 days.

3.What payment methods are accepted for FJP13007?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP13007 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP13007?

FJP13007 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP13007 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP13007?

For technical support, including FJP13007 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP13007 requirements.

6.How does Aetrix verify that FJP13007 is sourced from the original manufacturer or authorized distributors?

All FJP13007 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP13007 meets industry standards.

7.What is the process for return or replacement of FJP13007?

All FJP13007 units undergo pre-shipment inspection (PSI). If there is an issue with FJP13007, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP13007 part is unused and in its original packaging.

Return procedure for FJP13007:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…