onsemi FJP13007H1

Overview

FJP13007H1 from onsemi is a high-voltage, fast-switching NPN power transistor in TO-220 3L (dual gauge) package, rated for V_CEO = 400 V, I_C = 8 A DC, and P_C = 80 W at T_C = 25°C. It delivers t_ON = 1.6 μs and f_T = 4 MHz, and is designed for electronic ballast and switching-mode power supply (SMPS) primary-side switching.

For engineers reviewing the FJP13007H1 datasheet, pinout, applications, or equivalent options, key selection criteria include its 400 V V_CEO, 8 A continuous collector current capability, TO-220 dual-gauge mechanical robustness, H1 h_FE classification (15–28), and documented turn-off timing (t_STG = 3.0 μs, t_F = 0.7 μs).

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for high-voltage hard-switching applications. Its safe operating area (SOA) is characterized under forward-biased (Figure 6) and reverse-biased (Figure 7) conditions, with defined derating above 25°C case temperature.

The FJP13007H1 exhibits h_FE = 15–28 at V_CE = 5 V, I_C = 2 A, and V_CE(sat) = 1.0 V at I_C = 2 A / I_B = 0.4 A. Cob = 110 pF at V_CB = 10 V enables predictable snubber design in flyback and half-bridge topologies.

Key Specifications

Pinout & Package

Package: TO-220 3L (Dual Gauge) - Standard through-hole power package with integral heat slug; mounting hole compatible with industry-standard heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Compared with MJE13007 and ST13007, the FJP13007H1 offers guaranteed H1 gain and dual-gauge mechanical integrity but is discontinued-ST13007 provides identical performance with active production status and broader qualification scope.

Availability

FJP13007H1 is available at Aetrix Electronics and suitable for electronic ballast, switching-mode power supply, and industrial motor control applications requiring stable component supply despite end-of-life status.

Supply support for FJP13007H1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and connectivity solutions.

The FJP13007H1 belongs to onsemi's high-voltage bipolar power transistor product line, engineered specifically for cost-sensitive, high-reliability switching applications in lighting and power conversion where ruggedness and parametric consistency are critical.

FAQ

Is FJP13007H1 still in active production?

No, the FJP13007H1 is discontinued and not recommended for new designs per onsemi's official documentation. Aetrix Electronics maintains limited legacy stock with full traceability and supports last-time buys, cross-reference validation, and migration paths to active alternatives like ST13007.

What does the "H1" suffix mean in FJP13007H1?

The "H1" suffix denotes the h_FE (DC current gain) bin: guaranteed 15–28 at V_CE = 5 V and I_C = 2 A. This binning ensures predictable base drive requirements and consistent switching behavior across units, distinguishing it from unbinned variants like FJP13007TU.

Can FJP13007H1 replace FJP13007TU in an existing design?

Yes, FJP13007H1 can replace FJP13007TU electrically and mechanically, as both share identical absolute maximum ratings and TO-220 footprint. However, FJP13007H1 uses dual-gauge leadframe (vs. single-gauge in TU), offering improved thermal cycling endurance-verify mechanical retention in high-vibration environments.

What is the maximum safe operating frequency for FJP13007H1?

FJP13007H1 is characterized for switching up to 200 kHz based on t_ON = 1.6 μs and t_F = 0.7 μs, but practical operation is limited by thermal constraints. At 100 kHz with 50% duty cycle, continuous I_C must be reduced below 8 A to maintain T_J ≤ 150°C-derating curves (Figure 8) confirm usable range of 50–150 kHz in well-heatsinked designs.

Does FJP13007H1 require a heatsink in standard operation?

Yes, FJP13007H1 requires a heatsink for any sustained operation above ~2 W dissipation. With P_C = 80 W at T_C = 25°C and typical θ_JC ≈ 1.5°C/W, even moderate loads (e.g., 10 W) raise junction temperature beyond safe limits without external thermal management-mounting to a ≥15 cm² aluminum heatsink is recommended.