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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP13007H1TU-F080

Name: FJP13007H1TU-F080
Brand: onsemi
SKU: FJP13007H1TU-F080
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJP13007H1TU-F080

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP13007H1TU-F080.pdf

Description:: TRANS NPN 400V 8A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJP13007H1TU-F080 from onsemi is a high-voltage, fast-switching NPN power transistor in TO-220 3L (dual gauge) package, rated for 400 V V_CEO, 8 A I_C, and 80 W P_C at T_C = 25°C; used in electronic ballasts and switching-mode power supplies where high breakdown voltage and sub-microsecond switching are required.

For engineers reviewing the FJP13007H1TU-F080 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO = 400 V, t_ON/t_F = 1.6/0.7 μs, hFE classification H1 (15–28 at I_C = 2 A), and TO-220 dual-gauge mechanical compatibility with thermal management constraints.

Technical Context

This device operates as a high-voltage linear/switching amplifier stage with fixed-emitter configuration, supporting DC and pulsed collector currents up to 8 A and 16 A respectively. Its f_T = 4 MHz and C_ob = 110 pF at V_CB = 10 V enable stable operation in 20–100 kHz SMPS topologies.

The H1 gain bin (hFE = 15–28 at V_CE = 5 V, I_C = 2 A) and V_CE(sat) = 1.0 V at I_C = 2 A / I_B = 0.4 A define its drive sensitivity and conduction loss profile; safe operating area is validated up to 100 V and 10 A under forward-biased conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Withstands 400 V collector-emitter blocking voltage before avalanche, enabling use in 380 VDC bus applications.
I_C (DC)	8 A - Continuous collector current rating defines maximum steady-state output power capability with heatsinking.
P_C @ T_C = 25°C	80 W - Maximum dissipated power at case temperature 25°C; derates linearly above 25°C per Fig. 8.
t_ON/t_F	1.6 / 0.7 μs - Fast turn-on and fall times support >100 kHz switching without excessive switching loss.
hFE (H1 bin)	15–28 @ I_C = 2 A - Confirmed DC current gain range determines required base drive current for saturation.
C_ob	110 pF @ V_CB = 10 V - Output capacitance impacts zero-voltage switching feasibility and EMI filter design.

Pinout & Package

Package: TO-220 3L (dual gauge), through-hole mounting, vertical heat sink interface, standard lead frame thickness for enhanced thermal cycling reliability.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input terminal; requires ≥0.4 A drive for full saturation at I_C = 2 A.
2	Collector	Main high-voltage, high-current output node; electrically connected to tab for thermal path.
3	Emitter	Reference terminal for base drive and load return; low-inductance connection critical for switching stability.

Key Features

Feature	Design Value
High-voltage blocking	V_CEO = 400 V enables direct use in universal-input offline SMPS without cascading devices.
Fast switching	t_ON + t_F = 2.3 μs minimizes energy loss during transitions in 50–100 kHz converters.
H1 gain binning	Guaranteed hFE 15–28 ensures predictable base drive sizing across production lots.
TO-220 dual-gauge construction	Thicker lead frame improves thermal resistance and mechanical robustness vs. single-gauge variants.

Applications

Compact Fluorescent Lamp (CFL) Ballast	Offline AC-DC Adapter
Use Scenario: Drives resonant LC tank in half-bridge electronic ballast for 18–40 W lamps. IC Role / Device Role / Timing Role: Main high-side switching transistor in self-oscillating or IC-controlled half-bridge. Use Value: 400 V V_CEO withstands lamp ignition spikes; 1.6 μs t_ON sustains >50 kHz operation with low switching loss.	Use Scenario: Primary-side switch in 36–65 W flyback converter for universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Power switch modulating transformer primary current under PWM control. Use Value: 80 W P_C supports continuous operation at 50°C ambient with standard heatsink; H1 hFE ensures stable gate-drive coupling.
LED Driver (HV Buck)	Industrial DC-DC Converter
Use Scenario: High-side switch in buck-derived constant-current LED driver for street lighting (300–400 VDC bus). IC Role / Device Role / Timing Role: Regulated current source switch controlling LED string current via duty-cycle modulation. Use Value: 110 pF C_ob limits capacitive turn-on loss; 0.7 μs t_F reduces tail current during dimming transitions.	Use Scenario: Main switch in 12 V–400 V isolated forward converter for factory automation power modules. IC Role / Device Role / Timing Role: Primary-side power transistor handling repetitive 10 A pulses at 40 kHz. Use Value: 16 A I_CP rating accommodates peak inrush and fault currents; TO-220 dual-gauge package maintains bond wire integrity over 10,000 thermal cycles.

Compact Fluorescent Lamp (CFL) Ballast

Offline AC-DC Adapter

Use Scenario: Drives resonant LC tank in half-bridge electronic ballast for 18–40 W lamps.

IC Role / Device Role / Timing Role: Main high-side switching transistor in self-oscillating or IC-controlled half-bridge.

Use Value: 400 V V_CEO withstands lamp ignition spikes; 1.6 μs t_ON sustains >50 kHz operation with low switching loss.

Use Scenario: Primary-side switch in 36–65 W flyback converter for universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: Power switch modulating transformer primary current under PWM control.

Use Value: 80 W P_C supports continuous operation at 50°C ambient with standard heatsink; H1 hFE ensures stable gate-drive coupling.

LED Driver (HV Buck)

Industrial DC-DC Converter

Use Scenario: High-side switch in buck-derived constant-current LED driver for street lighting (300–400 VDC bus).

IC Role / Device Role / Timing Role: Regulated current source switch controlling LED string current via duty-cycle modulation.

Use Value: 110 pF C_ob limits capacitive turn-on loss; 0.7 μs t_F reduces tail current during dimming transitions.

Use Scenario: Main switch in 12 V–400 V isolated forward converter for factory automation power modules.

IC Role / Device Role / Timing Role: Primary-side power transistor handling repetitive 10 A pulses at 40 kHz.

Use Value: 16 A I_CP rating accommodates peak inrush and fault currents; TO-220 dual-gauge package maintains bond wire integrity over 10,000 thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJE13007G	V_CEO = 400 V, I_C = 8 A, but hFE = 8–40 (unbinned); TO-220 single-gauge package.	No guaranteed hFE bin; higher V_CE(sat) variation affects base drive design margin.	Select when cost sensitivity outweighs hFE consistency; verify thermal performance with single-gauge footprint.
ST13007D	V_CEO = 400 V, I_C = 8 A, f_T = 3 MHz (vs. 4 MHz); TO-220FP package with insulated tab.	Lower bandwidth limits max switching frequency; insulated tab adds isolation but increases thermal resistance.	Choose when reinforced isolation is required; accept ~15% longer t_ON in <60 kHz designs.

Compared with MJE13007G and ST13007D, the FJP13007H1TU-F080 offers tighter hFE control (H1 bin), faster switching (4 MHz f_T, 2.3 μs total transition), and dual-gauge mechanical reliability-making it preferable for volume-critical CFL ballasts and regulated adapters where parametric consistency matters.

Availability

FJP13007H1TU-F080 is available at Aetrix Electronics and suitable for electronic ballasts, offline AC-DC adapters, and industrial DC-DC converters requiring stable component supply and long-term BOM continuity despite end-of-life status.

Supply support for FJP13007H1TU-F080 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The FJP13007H1TU-F080 belongs to onsemi's legacy high-voltage bipolar power transistor family, designed specifically for cost-sensitive, high-reliability electronic ballast and SMPS applications demanding proven ruggedness and thermal stability.

FAQ

What is the pin configuration of the FJP13007H1TU-F080?

The FJP13007H1TU-F080 uses a standard TO-220 3L pinout: Pin 1 = Base, Pin 2 = Collector (connected to metal tab), Pin 3 = Emitter. This configuration is confirmed in the onsemi datasheet FJP13007/D Rev. 2 and applies identically to the FJP13007H1TU-F080 variant.

Is the FJP13007H1TU-F080 still recommended for new designs?

No-the FJP13007H1TU-F080 is marked "DISCONTINUED" and "NOT RECOMMENDED FOR NEW DESIGN" in the official onsemi datasheet. However, Aetrix Electronics maintains active inventory and supply support for legacy production programs relying on this part, including full traceability and lifecycle coordination.

What does the "H1" and "F080" suffix mean in FJP13007H1TU-F080?

"H1" denotes the DC current gain bin (hFE = 15–28 at I_C = 2 A); "F080" indicates TO-220 3L dual-gauge package construction. Both identifiers are defined in the onsemi ordering information table and distinguish this variant from single-gauge (H1TU) and H2-bin versions.

Can the FJP13007H1TU-F080 replace the FJP13007TU in existing PCBs?

Yes-FJP13007H1TU-F080 shares identical TO-220 3L footprint and pinout with FJP13007TU, but uses dual-gauge leads for improved thermal cycling endurance. Electrical parameters are aligned except hFE binning (H1 vs. unbinned), so board-level replacement is mechanically and functionally viable where gain consistency is beneficial.

What thermal derating applies to the FJP13007H1TU-F080?

The FJP13007H1TU-F080 has linear thermal derating: 0.63 W/°C above T_C = 25°C, down to zero at T_C = 150°C (per Fig. 8 in FJP13007/D). At T_C = 80°C, maximum allowable P_C drops to ~45 W; heatsink design must maintain case temperature within this limit for reliable FJP13007H1TU-F080 operation.

FJP13007H1TU-F080 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 8 @ 2A, 5V

Power - Max:: 80 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP13007H1TU-F080 FAQ

1.How can I place an order for FJP13007H1TU-F080 through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP13007H1TU-F080 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP13007H1TU-F080 reliable?

The price and inventory of FJP13007H1TU-F080 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP13007H1TU-F080 is usually 5 days.

3.What payment methods are accepted for FJP13007H1TU-F080?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP13007H1TU-F080 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP13007H1TU-F080?

FJP13007H1TU-F080 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP13007H1TU-F080 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP13007H1TU-F080?

For technical support, including FJP13007H1TU-F080 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP13007H1TU-F080 requirements.

6.How does Aetrix verify that FJP13007H1TU-F080 is sourced from the original manufacturer or authorized distributors?

All FJP13007H1TU-F080 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP13007H1TU-F080 meets industry standards.

7.What is the process for return or replacement of FJP13007H1TU-F080?

All FJP13007H1TU-F080 units undergo pre-shipment inspection (PSI). If there is an issue with FJP13007H1TU-F080, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP13007H1TU-F080 part is unused and in its original packaging.

Return procedure for FJP13007H1TU-F080:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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