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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP13007H2

Name: FJP13007H2
Brand: onsemi
SKU: FJP13007H2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJP13007H2

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP13007H2.pdf

Description:: TRANS NPN 400V 8A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJP13007H2 from onsemi is a high-voltage, fast-switching NPN power transistor in TO-220 3L (dual gauge) package, rated for 400 V V_CEO, 8 A I_C (DC), and 80 W P_C at T_C = 25°C; designed for electronic ballasts and switching-mode power supplies where high breakdown voltage and controlled switching speed are required.

For engineers reviewing the FJP13007H2 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO = 400 V, h_FE classification H2 (26–39 at I_C = 2 A), t_ON/t_F = 1.6/0.7 μs, V_CE(sat) ≤ 3.0 V at 8 A, and TO-220 dual-gauge mechanical compatibility.

Technical Context

This device operates as a single NPN bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for high-voltage switching. Its safe operating area (SOA) is defined up to 100 V and 10 A under pulsed conditions, and it exhibits f_T = 4 MHz at V_CE = 10 V, I_C = 0.5 A - confirming suitability for kHz-range SMPS topologies.

The H2 h_FE bin (26–39 at V_CE = 5 V, I_C = 2 A) enables predictable base drive sizing in linear-regulated or quasi-resonant flyback designs, while Cob = 110 pF at V_CB = 10 V supports stable snubberless operation in low-EMI ballast circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - supports primary-side switching in 230 VAC offline SMPS without derating
I_C (DC)	8 A - enables ≥150 W continuous output in hard-switched converters
P_C @ T_C = 25°C	80 W - requires heatsink with θ_JA ≤ 1.56°C/W for full-load operation
h_FE (H2 bin)	26–39 @ V_CE = 5 V, I_C = 2 A - ensures stable base current design across production lot
t_ON/t_F	1.6 / 0.7 μs - limits switching losses in 20–50 kHz ballast drivers
C_ob	110 pF @ V_CB = 10 V - reduces capacitive turn-off delay in self-oscillating circuits
V_CE(sat)	≤3.0 V @ I_C = 8 A, I_B = 2 A - keeps conduction loss below 24 W at full current

Pinout & Package

Package: TO-220 3L (dual gauge), straight lead, insulated tab, JEDEC MS-001AC compliant. Mounting requires electrically isolated heatsink due to collector-connected tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives DC or pulsed current to bias transistor into saturation or cutoff; requires I_B ≥ I_C/h_FE(min)
2 (Collector)	High-side power node	Connected to heatsink tab; electrically common with case - must be isolated from PCB ground
3 (Emitter)	Low-side return path	Serves as reference for base drive and load current return; low-inductance layout critical for fast switching

Key Features

Feature	Design Value
High-voltage capability	V_CEO = 400 V enables direct use in 230 VAC rectified bus applications without series stacking
H2 h_FE binning	Narrow DC current gain range (26–39) simplifies base resistor selection and improves batch consistency
Fast switching performance	t_ON + t_F = 2.3 μs minimizes energy loss per cycle in 20–50 kHz ballast drivers
TO-220 dual-gauge package	Thicker leadframe enhances thermal transfer to heatsink vs. standard TO-220, supporting sustained 8 A operation

Applications

Electronic Ballast Control	Switch-Mode Power Supply
Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems. IC Role / Device Role / Timing Role: Main switching element in half-bridge resonant inverter stage. Use Value: 400 V V_CEO withstands reflected transients during lamp strike; 110 pF C_ob stabilizes resonant frequency drift.	Use Scenario: Primary-side switch in offline flyback or forward converters for industrial power supplies. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to transformer primary. Use Value: 80 W P_C rating allows >100 W output with moderate heatsinking; H2 h_FE bin ensures repeatable gate-drive interface design.
Induction Heating Driver	DC Motor Commutation
Use Scenario: Half-bridge switching in medium-power (500–1000 W) induction cooktops. IC Role / Device Role / Timing Role: High-current, high-dV/dt switch in resonant tank driver circuit. Use Value: 8 A I_C (DC) supports continuous 800 W operation; 1.6 μs t_ON limits switching loss at 25–40 kHz carrier frequency.	Use Scenario: Brushed DC motor H-bridge upper-leg switch in industrial actuators. IC Role / Device Role / Timing Role: High-side NPN switch controlling motor voltage polarity and braking. Use Value: V_CEO = 400 V accommodates back-EMF spikes up to 300 V; TO-220 tab isolation prevents ground-loop coupling in multi-motor systems.

Electronic Ballast Control

Switch-Mode Power Supply

Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems.

IC Role / Device Role / Timing Role: Main switching element in half-bridge resonant inverter stage.

Use Value: 400 V V_CEO withstands reflected transients during lamp strike; 110 pF C_ob stabilizes resonant frequency drift.

Use Scenario: Primary-side switch in offline flyback or forward converters for industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to transformer primary.

Use Value: 80 W P_C rating allows >100 W output with moderate heatsinking; H2 h_FE bin ensures repeatable gate-drive interface design.

Induction Heating Driver

DC Motor Commutation

Use Scenario: Half-bridge switching in medium-power (500–1000 W) induction cooktops.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switch in resonant tank driver circuit.

Use Value: 8 A I_C (DC) supports continuous 800 W operation; 1.6 μs t_ON limits switching loss at 25–40 kHz carrier frequency.

Use Scenario: Brushed DC motor H-bridge upper-leg switch in industrial actuators.

IC Role / Device Role / Timing Role: High-side NPN switch controlling motor voltage polarity and braking.

Use Value: V_CEO = 400 V accommodates back-EMF spikes up to 300 V; TO-220 tab isolation prevents ground-loop coupling in multi-motor systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJE13007	Same V_CEO = 400 V, but h_FE un-binned (min 8); TO-220 single-gauge package	Lacks H2 gain consistency; lower thermal robustness due to thinner leadframe	Acceptable for cost-sensitive, non-critical ballast designs where gain variation is tolerable
ST13007	V_CEO = 400 V, I_C = 8 A, but t_F = 1.2 μs (slower); TO-220 single-gauge	Higher switching loss in >30 kHz applications; reduced SOA at high V_CE	Preferred only when lower EMI is prioritized over efficiency in <25 kHz SMPS

Compared with MJE13007 and ST13007, the FJP13007H2 delivers tighter h_FE control and superior thermal performance via dual-gauge TO-220, making it optimal for production-grade electronic ballasts requiring consistent base drive and long-term reliability at full load.

Availability

FJP13007H2 is available at Aetrix Electronics and suitable for electronic ballast control, switching-mode power supply design, and induction heating driver applications requiring stable component supply and legacy-design continuity support.

Supply support for FJP13007H2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and consumer markets.

The FJP13007H2 belongs to onsemi's high-voltage bipolar power transistor product line, engineered specifically for reliable, cost-effective switching in electronic lighting and offline power conversion systems.

FAQ

What is the h_FE range for FJP13007H2?

The FJP13007H2 is binned to the H2 classification, with DC current gain (h_FE) specified as 26 to 39 at V_CE = 5 V and I_C = 2 A. This tighter gain range compared to standard FJP13007 variants improves predictability in base drive design and reduces unit-to-unit variance in production assemblies using the FJP13007H2.

Is FJP13007H2 pin-compatible with other TO-220 NPN transistors?

Yes, the FJP13007H2 uses the standard TO-220 3L footprint with pinout Base–Collector–Emitter (1–2–3). It is mechanically compatible with other TO-220 NPN transistors like MJE13007 and ST13007, but electrical differences - especially h_FE binning and thermal performance - require verification before substitution in the FJP13007H2 design context.

Why does the datasheet state "DISCONTINUED" and "NOT RECOMMENDED FOR NEW DESIGN"?

The FJP13007H2 is marked discontinued by onsemi due to strategic portfolio rationalization and migration toward newer high-efficiency alternatives. However, Aetrix Electronics maintains active inventory and supply chain support for legacy FJP13007H2 deployments in maintenance, repair, and long-lifecycle industrial equipment where redesign is impractical or cost-prohibitive.

What is the maximum safe operating temperature for FJP13007H2?

The FJP13007H2 has a maximum junction temperature (T_J) of 150°C and a storage temperature range of –65°C to +150°C. For reliable long-term operation, case temperature (T_C) must remain ≤125°C under full 8 A load, requiring appropriate heatsinking with thermal resistance ≤1.56°C/W to ambient, as derived from its 80 W P_C rating at T_C = 25°C.

Can FJP13007H2 be used in avalanche mode?

No, the FJP13007H2 is not rated or characterized for repetitive avalanche operation. Its safe operating area (SOA) curves are defined only for forward-biased and reverse-biased conditions under specified pulse widths and duty cycles. Intentional avalanche use may cause parametric shift or catastrophic failure; designers must implement external clamping or snubbing to limit V_CE transients within the 400 V V_CEO rating of the FJP13007H2.

FJP13007H2 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 26 @ 2A, 5V

Power - Max:: 80 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP13007H2 FAQ

1.How can I place an order for FJP13007H2 through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP13007H2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP13007H2 reliable?

The price and inventory of FJP13007H2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP13007H2 is usually 5 days.

3.What payment methods are accepted for FJP13007H2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP13007H2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP13007H2?

FJP13007H2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP13007H2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP13007H2?

For technical support, including FJP13007H2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP13007H2 requirements.

6.How does Aetrix verify that FJP13007H2 is sourced from the original manufacturer or authorized distributors?

All FJP13007H2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP13007H2 meets industry standards.

7.What is the process for return or replacement of FJP13007H2?

All FJP13007H2 units undergo pre-shipment inspection (PSI). If there is an issue with FJP13007H2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP13007H2 part is unused and in its original packaging.

Return procedure for FJP13007H2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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