Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP13007H2TU

Name: FJP13007H2TU
Brand: onsemi
SKU: FJP13007H2TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: FJP13007H2TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP13007H2TU.pdf

Description:: TRANS NPN 400V 8A TO-220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,788

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

FJP13007H2TU from onsemi is a high-voltage, fast-switching NPN power transistor in TO-220 3L (dual gauge) package, rated for 400 V V_CEO, 8 A I_C (DC), and 80 W P_C at T_C = 25°C; designed for electronic ballast and switching-mode power supply (SMPS) primary-side switching.

For engineers reviewing the FJP13007H2TU datasheet, pinout, applications, or equivalent options, key selection factors include its H2 h_FE classification (26–39 at I_C = 2 A), 1.0 V V_CE(sat) at I_C = 2 A / I_B = 0.4 A, 4 MHz f_T, and 110 pF C_ob - all critical for high-efficiency, high-frequency SMPS design.

Technical Context

This device operates as a single NPN bipolar junction transistor with fixed emitter-base-collector terminal assignment (Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter). Its high V_CEO (400 V) and V_CBO (700 V) support operation in offline AC/DC converters up to 265 VAC input.

Switching performance is defined by t_ON = 1.6 μs, t_STG = 3.0 μs, and t_F = 0.7 μs under standardized 125 V / 5 A test conditions, enabling stable operation in 20–100 kHz SMPS topologies without excessive switching loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - supports 265 VAC rectified input with ≥2× safety margin in flyback/forward converters
I_C (DC)	8 A - enables continuous output power up to ~200 W in well-heatsinked SMPS designs
P_C @ T_C = 25°C	80 W - requires thermal interface and ≥15 cm² 2 mm thick aluminum heatsink for full-load operation
h_FE (H2 class)	26–39 @ V_CE = 5 V, I_C = 2 A - ensures predictable base drive requirements in linear and switching regions
V_CE(sat)	1.0 V @ I_C = 2 A, I_B = 0.4 A - limits conduction loss to ≤2 W at 2 A, improving efficiency over lower-gain alternatives
f_T	4 MHz - sufficient for stable gain control up to ~100 kHz switching frequencies with adequate phase margin
C_ob	110 pF @ V_CB = 10 V - contributes to turn-off energy loss; must be accounted for in snubber design

Pinout & Package

Package: TO-220 3L (dual gauge), through-hole, isolated tab (collector-connected), JEDEC standard outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives DC or pulsed current to bias transistor into active/saturation; requires series resistor to limit I_B ≤ 4 A
2 (Collector)	High-voltage power output	Connected to heatsink via isolated mounting; carries full load current and withstands 400 V transient spikes
3 (Emitter)	Reference node / return path	Serves as common reference for base drive and load return; low-inductance layout essential for fast switching

Key Features

Feature	Design Value
High-voltage capability	V_CBO = 700 V enables robust operation in 400 V DC bus applications with voltage overshoot margin
H2 h_FE classification	Guaranteed 26–39 gain range simplifies base drive design and improves batch-to-batch consistency in production
Fast switching times	t_ON/t_F = 1.6/0.7 μs reduces switching losses in 50–100 kHz SMPS, directly improving thermal performance
TO-220 dual-gauge package	Enhanced mechanical stability and thermal contact vs. single-gauge variant, supporting higher sustained power dissipation

Applications

Electronic Ballast	Offline SMPS
Use Scenario: High-frequency (20–60 kHz) lamp ignition and regulation in fluorescent lighting systems. IC Role / Device Role / Timing Role: Primary-side switch controlling resonant tank current and voltage waveform shape. Use Value: 400 V V_CEO and fast t_F = 0.7 μs ensure reliable lamp striking and stable arc maintenance without secondary-side feedback.	Use Scenario: Primary-side switching in universal-input (85–265 VAC) flyback or forward converters for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch modulating energy transfer from primary to secondary winding. Use Value: 80 W P_C rating and 1.0 V V_CE(sat) enable >85% efficiency at 100 W output with minimal heatsink area.
DC-DC Converter	Induction Heating Driver
Use Scenario: High-current step-down conversion in 300–400 V DC input systems such as solar string inverters or EV auxiliary supplies. IC Role / Device Role / Timing Role: Synchronous or quasi-resonant switch handling high peak currents during PWM cycles. Use Value: 16 A I_CP pulse rating and 110 pF C_ob allow safe operation at 50 kHz with controlled dv/dt during turn-off.	Use Scenario: Half-bridge switching stage in medium-frequency (20–50 kHz) induction cooktops and heating coils. IC Role / Device Role / Timing Role: High-voltage, high-current switch driving resonant LC tank with zero-voltage switching (ZVS) assist. Use Value: 700 V V_CBO withstands inductive kickback; t_STG = 3.0 μs supports precise dead-time control to prevent shoot-through.

Electronic Ballast

Offline SMPS

Use Scenario: High-frequency (20–60 kHz) lamp ignition and regulation in fluorescent lighting systems.

IC Role / Device Role / Timing Role: Primary-side switch controlling resonant tank current and voltage waveform shape.

Use Value: 400 V V_CEO and fast t_F = 0.7 μs ensure reliable lamp striking and stable arc maintenance without secondary-side feedback.

Use Scenario: Primary-side switching in universal-input (85–265 VAC) flyback or forward converters for industrial power supplies.

IC Role / Device Role / Timing Role: Main power switch modulating energy transfer from primary to secondary winding.

Use Value: 80 W P_C rating and 1.0 V V_CE(sat) enable >85% efficiency at 100 W output with minimal heatsink area.

DC-DC Converter

Induction Heating Driver

Use Scenario: High-current step-down conversion in 300–400 V DC input systems such as solar string inverters or EV auxiliary supplies.

IC Role / Device Role / Timing Role: Synchronous or quasi-resonant switch handling high peak currents during PWM cycles.

Use Value: 16 A I_CP pulse rating and 110 pF C_ob allow safe operation at 50 kHz with controlled dv/dt during turn-off.

Use Scenario: Half-bridge switching stage in medium-frequency (20–50 kHz) induction cooktops and heating coils.

IC Role / Device Role / Timing Role: High-voltage, high-current switch driving resonant LC tank with zero-voltage switching (ZVS) assist.

Use Value: 700 V V_CBO withstands inductive kickback; t_STG = 3.0 μs supports precise dead-time control to prevent shoot-through.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD13007G	Same V_CEO (400 V), same TO-220 package, but h_FE min = 8 (unclassified), no H2 binning guarantee	Lacks guaranteed H2 gain spread; less suitable for designs requiring tight base drive predictability	Acceptable where gain variation is tolerable and cost sensitivity outweighs consistency needs
ST13007	Identical absolute max ratings and pinout; f_T = 3 MHz (vs. 4 MHz), t_F = 1.0 μs (vs. 0.7 μs)	Marginally slower switching; may require larger snubber or reduced frequency in high-efficiency SMPS	Valid alternative when 0.3 μs fall time difference does not impact system efficiency or thermal budget

Compared with MJD13007G and ST13007, the FJP13007H2TU provides tighter h_FE control and faster switching, delivering more consistent base drive design and lower switching losses - especially valuable in volume-manufactured electronic ballasts and compact SMPS.

Availability

FJP13007H2TU is available at Aetrix Electronics and suitable for electronic ballast, offline SMPS, and induction heating driver applications requiring stable component supply despite its discontinued status for new designs.

Supply support for FJP13007H2TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The FJP13007H2TU belongs to onsemi's legacy high-voltage bipolar power transistor product line, engineered specifically for reliability-critical, high-voltage switching applications in lighting and power conversion equipment.

FAQ

Is FJP13007H2TU still in production?

No - the FJP13007H2TU is officially discontinued and not recommended for new designs per onsemi documentation. However, Aetrix Electronics maintains limited legacy inventory with full traceability and supports ongoing production runs for existing qualified designs requiring continuity of supply.

What does the "H2" suffix mean in FJP13007H2TU?

The "H2" suffix denotes the h_FE gain bin classification: FJP13007H2TU is factory-tested and binned to guarantee DC current gain between 26 and 39 at V_CE = 5 V and I_C = 2 A, ensuring consistent base drive requirements across production lots.

Can FJP13007H2TU replace FJP13007TU in an existing design?

Yes - FJP13007H2TU shares identical absolute maximum ratings, pinout, and TO-220 package with FJP13007TU, but offers tighter h_FE control (26–39 vs. unclassified 8–60). No PCB changes are needed, though base resistor values may be optimized for the narrower gain range in the FJP13007H2TU.

What is the thermal resistance R_θJC for FJP13007H2TU?

The FJP13007H2TU has a typical junction-to-case thermal resistance (R_θJC) of 1.56°C/W, derived from its 80 W P_C rating and 150°C maximum junction temperature. This value assumes proper mounting with thermal compound and a flat, clean heatsink surface per TO-220 mechanical specifications.

Does FJP13007H2TU support avalanche energy rating?

No - the FJP13007H2TU datasheet does not specify single-pulse or repetitive avalanche energy (E_AS) ratings. Designers must implement external clamping (e.g., RCD snubber) to limit V_CE transients within the 400 V V_CEO rating during inductive switching events.

FJP13007H2TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 26 @ 2A, 5V

Power - Max:: 80 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP13007H2TU FAQ

1.How can I place an order for FJP13007H2TU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP13007H2TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP13007H2TU reliable?

The price and inventory of FJP13007H2TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP13007H2TU is usually 5 days.

3.What payment methods are accepted for FJP13007H2TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP13007H2TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP13007H2TU?

FJP13007H2TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP13007H2TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP13007H2TU?

For technical support, including FJP13007H2TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP13007H2TU requirements.

6.How does Aetrix verify that FJP13007H2TU is sourced from the original manufacturer or authorized distributors?

All FJP13007H2TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP13007H2TU meets industry standards.

7.What is the process for return or replacement of FJP13007H2TU?

All FJP13007H2TU units undergo pre-shipment inspection (PSI). If there is an issue with FJP13007H2TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP13007H2TU part is unused and in its original packaging.

Return procedure for FJP13007H2TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…