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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP13007TU

Name: FJP13007TU
Brand: onsemi
SKU: FJP13007TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJP13007TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP13007TU.pdf

Description:: TRANS NPN 400V 8A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJP13007TU from onsemi is a high-voltage, fast-switching NPN power transistor in TO-220 3L (dual gauge) package, rated for 400 V V_CEO, 8 A I_C, and 80 W P_C at T_C = 25°C; designed for electronic ballast and switching-mode power supply (SMPS) primary-side switching.

For engineers reviewing the FJP13007TU datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO ≥ 400 V, t_ON/t_F ≤ 1.6/0.7 μs, hFE range (8–60), safe operating area (SOA) compliance at 125 V, and TO-220 thermal interface requirements.

Technical Context

This device operates as a single NPN bipolar junction transistor with base-controlled current amplification. It supports high-voltage DC blocking (V_CBO = 700 V) and fast transient response (f_T = 4 MHz, t_ON = 1.6 μs, t_F = 0.7 μs), enabling use in hard-switched flyback and forward converter topologies.

Its SOA is characterized up to 100 V and 10 A under pulsed conditions, with defined derating above 25°C (zero dissipation at 150°C). The hFE classification varies by variant (H1/H2), but FJP13007TU corresponds to standard hFE1 (8–60 at I_C = 2 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Maximum collector-emitter voltage before breakdown; enables operation in 380 VDC bus SMPS stages.
I_C (DC)	8 A - Continuous collector current rating; defines maximum steady-state load current capability.
P_C (T_C = 25°C)	80 W - Maximum power dissipation at case temperature 25°C; requires heatsink for sustained >10 W operation.
t_ON/t_F	1.6 / 0.7 μs - Turn-on and fall times under 125 V, 5 A test conditions; supports switching frequencies up to ~200 kHz.
hFE (I_C = 2 A)	8–60 - DC current gain range; determines required base drive current (e.g., 0.4 A for 2 A I_C at hFE = 5).
C_ob	110 pF @ V_CB = 10 V - Output capacitance affecting switching losses and EMI in high-dV/dt environments.
V_CE(sat)	1.0–3.0 V @ I_C = 2–8 A - Saturation voltage directly impacts conduction loss and thermal design margin.

Pinout & Package

Package: TO-220 3L (dual gauge), through-hole, vertical mounting, tab-connected to collector. Requires insulated mounting hardware when collector is not at chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives base current to enable collector current flow; requires current-limited driver (e.g., 0.4–2 A) for full saturation.
2 (Collector)	High-side power path	Connected to high-voltage rail (up to 400 V); electrically tied to metal tab-must be isolated if not referenced to heatsink potential.
3 (Emitter)	Power return reference	Serves as common emitter node; carries full load current and must be routed with low-inductance, low-resistance PCB traces.

Key Features

Feature	Design Value
High-voltage blocking	V_CBO = 700 V ensures robustness against voltage transients in offline SMPS applications.
Fast switching speed	t_ON/t_F = 1.6/0.7 μs reduces switching losses and enables higher-frequency operation than legacy 1300x series.
Defined SOA curve	Forward-biased SOA validated up to 100 V/10 A (10 μs pulse) supports reliable hard-switching without secondary breakdown.
TO-220 thermal interface	80 W P_C at T_C = 25°C enables use with standard TO-220 heatsinks in industrial-grade power supplies.

Applications

Electronic Ballast	Switch-Mode Power Supply
Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems. IC Role / Device Role / Timing Role: Primary-side switch in resonant half-bridge topology, driven by dedicated ballast controller. Use Value: 400 V V_CEO withstands lamp open-circuit transients; fast t_F ensures clean zero-voltage switching transitions.	Use Scenario: Primary-side switching in universal-input (85–265 VAC) offline flyback converters. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding. Use Value: 80 W P_C and SOA compliance allow stable operation at 65–100 kHz with 380 VDC bus and 5–8 A peak current.
DC-DC Converter	Induction Heating Driver
Use Scenario: Isolated DC-DC conversion in telecom or industrial power modules. IC Role / Device Role / Timing Role: Hard-switched transistor in forward or push-pull configuration driving transformer primary. Use Value: hFE range (8–60) enables predictable base drive sizing; 110 pF C_ob minimizes capacitive coupling noise in multi-rail systems.	Use Scenario: Half-bridge switching stage in medium-power (1–3 kW) induction cooktops. IC Role / Device Role / Timing Role: High-voltage switch handling 400 V DC link and high di/dt loads. Use Value: 700 V V_CBO provides margin against inductive kickback; TO-220 tab-to-collector connection simplifies heatsinking in compact layouts.

Electronic Ballast

Switch-Mode Power Supply

Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems.

IC Role / Device Role / Timing Role: Primary-side switch in resonant half-bridge topology, driven by dedicated ballast controller.

Use Value: 400 V V_CEO withstands lamp open-circuit transients; fast t_F ensures clean zero-voltage switching transitions.

Use Scenario: Primary-side switching in universal-input (85–265 VAC) offline flyback converters.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding.

Use Value: 80 W P_C and SOA compliance allow stable operation at 65–100 kHz with 380 VDC bus and 5–8 A peak current.

DC-DC Converter

Induction Heating Driver

Use Scenario: Isolated DC-DC conversion in telecom or industrial power modules.

IC Role / Device Role / Timing Role: Hard-switched transistor in forward or push-pull configuration driving transformer primary.

Use Value: hFE range (8–60) enables predictable base drive sizing; 110 pF C_ob minimizes capacitive coupling noise in multi-rail systems.

Use Scenario: Half-bridge switching stage in medium-power (1–3 kW) induction cooktops.

IC Role / Device Role / Timing Role: High-voltage switch handling 400 V DC link and high di/dt loads.

Use Value: 700 V V_CBO provides margin against inductive kickback; TO-220 tab-to-collector connection simplifies heatsinking in compact layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJE13007	Same V_CEO (400 V), I_C (8 A), TO-220 package; hFE min = 6 vs. 8 for FJP13007TU; slightly higher V_CE(sat).	Identical use in SMPS and ballast; lower hFE may require increased base drive current.	Acceptable drop-in where base drive headroom exists; verify t_ON/t_F match for >150 kHz designs.
ST13007	V_CEO = 400 V, I_C = 8 A, TO-220; f_T = 3 MHz (vs. 4 MHz); t_F = 0.9 μs (vs. 0.7 μs); Cob = 120 pF.	Valid for <100 kHz SMPS; less suitable for high-frequency ballast due to slower fall time.	Preferable only in cost-sensitive, lower-frequency replacements where timing margins are relaxed.

Compared with MJE13007 and ST13007, the FJP13007TU offers superior switching speed (0.7 μs t_F) and tighter hFE control, making it better suited for high-efficiency, high-frequency electronic ballasts and compact SMPS where thermal and timing margins are constrained.

Availability

FJP13007TU is available at Aetrix Electronics and suitable for electronic ballast, switching-mode power supply, and industrial DC-DC converter applications requiring stable component supply and legacy-compatible TO-220 power transistor sourcing.

Supply support for FJP13007TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and IoT applications.

The FJP13007TU belongs to onsemi's high-voltage bipolar power transistor product line, engineered for reliability and performance in mains-connected lighting and power conversion systems.

FAQ

Is the FJP13007TU still recommended for new designs?

No-the FJP13007TU is officially discontinued and not recommended for new designs per onsemi documentation. Engineers should consult onsemi's latest alternatives such as the NSS13007 or NTV02B04M for updated high-voltage NPN transistors. Legacy FJP13007TU remains supported for repair, maintenance, and continuity of existing production runs.

What is the pin configuration of the FJP13007TU?

The FJP13007TU uses a standard TO-220 3L pinout: Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter. This configuration is confirmed in the official onsemi datasheet (FJP13007/D, Rev. 2, September 2017) and applies specifically to the FJP13007TU variant with dual-gauge leadframe.

Does the FJP13007TU have a built-in base-emitter resistor?

No-the FJP13007TU is a discrete NPN bipolar transistor without any integrated base-emitter resistor. External base drive circuitry-including current-limiting resistors and optional Baker clamp-must be provided per application requirements and switching speed targets.

What thermal derating applies to the FJP13007TU?

The FJP13007TU has linear thermal derating: 0.64 W/°C above 25°C case temperature, reaching zero dissipation at 150°C. At T_C = 100°C, maximum allowable P_C drops to 32 W. Heatsink selection must account for this slope and ensure T_C stays within limits under worst-case ambient and airflow conditions.

Can the FJP13007TU replace the FJP13005 in an existing design?

Yes-with caution: both share TO-220 packaging and pinout, but FJP13007TU has higher V_CEO (400 V vs. 300 V), higher I_C (8 A vs. 4 A), and higher P_C (80 W vs. 40 W). Verify SOA compatibility, base drive adequacy, and layout thermal capacity before substitution; no changes needed to footprint or wiring.

FJP13007TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 5 @ 5A, 5V

Power - Max:: 80 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP13007TU FAQ

1.How can I place an order for FJP13007TU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP13007TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP13007TU reliable?

The price and inventory of FJP13007TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP13007TU is usually 5 days.

3.What payment methods are accepted for FJP13007TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP13007TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP13007TU?

FJP13007TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP13007TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP13007TU?

For technical support, including FJP13007TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP13007TU requirements.

6.How does Aetrix verify that FJP13007TU is sourced from the original manufacturer or authorized distributors?

All FJP13007TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP13007TU meets industry standards.

7.What is the process for return or replacement of FJP13007TU?

All FJP13007TU units undergo pre-shipment inspection (PSI). If there is an issue with FJP13007TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP13007TU part is unused and in its original packaging.

Return procedure for FJP13007TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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