onsemi FJP13009H2

Overview

FJP13009H2 from onsemi is a 700 V, 12 A NPN silicon epitaxial planar power transistor in TO-220-3LD package, with hFE bin class H2 (15–28 at IC = 5 A, VCE = 5 V), designed for high-speed switching in electronic ballasts and switched-mode power supplies. It delivers 100 W total device dissipation at TC = 25 °C and supports pulse collector current up to 24 A.

For engineers reviewing the FJP13009H2 datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO(sus) = 400 V, tON = 1.1 µs, Cob = 180 pF, fT = 4 MHz, and VCE(sat) = 1.0 V at IC = 5 A/IB = 1 A - all critical for high-efficiency, high-voltage switching designs.

Technical Context

The FJP13009H2 operates as a high-voltage, fast-switching NPN bipolar junction transistor optimized for hard-switched topologies. Its 700 V VCBO rating enables use in off-line AC-DC front-ends, while its 4 MHz fT and sub-microsecond switching times (tON = 1.1 µs, tF = 0.7 µs) support operation up to ~100 kHz in SMPS designs.

Thermal performance is defined by a 150 °C maximum junction temperature and 100 W PD at TC = 25 °C, with derating above 25 °C per Figure 8. The device's hFE classification H2 ensures consistent DC gain (15–28) across production lots, reducing design margining for base drive circuitry.

Key Specifications

Pinout & Package

Package: TO-220-3LD (Case 340AT), through-hole, single-ended power package with integral heat sink tab. Mounting surface is electrically connected to Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage power transistor applications.

Compared with BUL128D and BUL111, the FJP13009H2 offers tighter hFE control (H2 bin), faster switching (1.1 µs vs. 1.5 µs), and documented Cob/fT values - advantages critical for EMI-constrained, high-density SMPS designs where predictability and efficiency are prioritized.

Availability

FJP13009H2 is available at Aetrix Electronics and suitable for electronic ballasts, switched-mode power supplies, and motor control applications requiring stable component supply, long-term manufacturability, and consistent hFE binning.

Supply support for FJP13009H2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The FJP13009H2 belongs to onsemi's high-voltage bipolar power transistor product line, engineered specifically for cost-sensitive, high-reliability switching applications in lighting, power conversion, and motor drive systems.

FAQ

What is the hFE bin classification for FJP13009H2?

The "H2" suffix in FJP13009H2 denotes the hFE bin class, specifying a DC current gain range of 15–28 measured at VCE = 5 V and IC = 5 A. This binning ensures consistent base drive requirements across production lots and reduces design margining for transistor biasing networks in the FJP13009H2.

What is the maximum collector-emitter sustaining voltage for FJP13009H2?

The FJP13009H2 has a collector-emitter sustaining voltage VCEO(sus) of 400 V under test conditions of IC = 10 mA and IB = 0. This parameter defines the maximum voltage the device can sustain in active switching mode before breakdown, and is critical for selecting appropriate bus voltage margins in SMPS and ballast designs using the FJP13009H2.

Is FJP13009H2 suitable for use in a flyback converter primary switch?

Yes, the FJP13009H2 is suitable for flyback primary switching with input voltages up to 265 VAC (≈375 VDC peak). Its 400 V VCEO(sus) and 700 V VCBO provide adequate margin against reflected transients and line surges. Designers must verify SOA compliance under worst-case RCD clamp conditions and ensure base drive meets IB = 1 A minimum for 5 A collector current in the FJP13009H2.

What is the thermal resistance junction-to-case for FJP13009H2?

The FJP13009H2 does not specify RθJC directly in its datasheet, but its 100 W total device dissipation at TC = 25 °C implies an effective RθJC of approximately 1.25 °C/W when mounted to a properly sized heatsink with thermal interface material. This value is derived from ΔT = PD × RθJC, where TJ(max) − TC = 125 °C, and is applicable only under validated mounting conditions for the FJP13009H2.

Does FJP13009H2 have a built-in base-emitter resistor?

No, the FJP13009H2 is a standard three-terminal NPN bipolar transistor without any integrated base-emitter resistors. It requires external base drive circuitry - typically a current-limited resistor or dedicated driver - to establish proper saturation and cutoff states. This discrete control architecture allows flexible biasing optimization in each application using the FJP13009H2.