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onsemi FJP2160DTU
- Part No.:
- FJP2160DTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
FJP2160DTU.pdf
- Description:
- TRANS NPN 800V 2A TO-220-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,962
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Product details
Overview
FJP2160DTU from ON Semiconductor (formerly Fairchild) is an ESBC™-rated NPN silicon power transistor designed for high-voltage, high-speed switching in cascode configurations with a MOSFET. It delivers 1600 V collector-base breakdown voltage, 800 V collector-emitter breakdown voltage, 2 A continuous collector current, and avalanche-rated ruggedness for use in smart metering, industrial HV power supplies, and motor/ignition drivers.
For engineers reviewing the FJP2160DTU datasheet, pinout, applications, or equivalent options, this device is selected for its squared RBSOA up to 1600 V, absence of Miller capacitance in ESBC™ operation, low VCE(sat) (0.12 V typ. at IC = 0.5 A), fast inductive fall time (35 ns), and immunity to false triggering under high dv/dt transients.
Technical Context
The FJP2160DTU operates as the bipolar component in an Emitter-Switched Bipolar/MOSFET Cascode (ESBC™) configuration, where it is driven by a low-voltage MOSFET (e.g., FDC655) to achieve high-voltage blocking and low-loss switching. Its design eliminates Miller capacitance and reduces driving power requirements.
It features a square reverse-bias safe operating area (RBSOA) rated up to 1600 V, avalanche energy rating of 3.5 mJ, and thermal resistance RθJC = 1.25 °C/W - enabling stable operation under inductive switching stress and high ambient temperatures up to +125 °C junction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 1600 V - Enables direct use in 1200 V-class DC bus applications without snubber circuits. |
| VCEO | 800 V - Supports operation across wide-input industrial power supplies (e.g., 400–700 V DC input). |
| IC (continuous) | 2 A - Sustains steady-state load current in smart breaker and motor driver output stages. |
| VCE(sat) | 0.12 V (typ. at IC = 0.5 A, IB = 0.167 A) - Minimizes conduction loss and heatsink sizing in high-efficiency designs. |
| tf (inductive) | 35 ns (at IC = 1 A) - Enables reliable 150 kHz switching in resonant and quasi-resonant topologies. |
| EAS | 3.5 mJ - Provides single-pulse avalanche robustness during overvoltage transients in unclamped inductive loads. |
| RθJC | 1.25 °C/W - Allows 100 W dissipation with modest heatsinking (e.g., 25 °C case temperature rise at full PD). |
Pinout & Package
Package: TO-220 3L (JEDEC variation AB), through-hole, isolated tab, standard heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base drive current (up to 1 A pulse) to saturate or cut off the transistor; low-impedance gate drive required in ESBC™ mode. |
| 2 (Collector) | High-voltage power output node | Connected to HV DC bus (up to 1600 V); carries switched load current and must be routed with creepage/clearance compliance. |
| 3 (Emitter) | Power return / reference node | Serves as common emitter for BJT and source connection for cascoded MOSFET; requires low-inductance layout to preserve switching speed. |
Key Features
| Feature | Design Value |
|---|---|
| ESBC™-optimized architecture | Eliminates Miller capacitance (Cob = 15 pF at 200 V), enabling clean turn-off and reducing gate drive power by >50% vs. standalone BJT. |
| Squared RBSOA | Rated to 1600 V × 2 A - supports safe operation under simultaneous high voltage and current stress during inductive turn-off. |
| Avalanche-rated | 3.5 mJ single-pulse energy rating - withstands repetitive unclamped inductive switching without degradation. |
| No parasitic transistors | Immunity to static dv/dt-induced false triggering - critical for reliability in noisy industrial environments (e.g., motor drives). |
| Low VCE(sat) at high hFE | 0.131 V at hFE = 3, IC = 0.5 A - enables efficient operation even with moderate base drive availability. |
Applications
| Smart Meter Power Switch | Industrial HV DC-DC Converter |
|---|---|
Use Scenario: High-voltage isolation switch in polyphase electricity meter front-end, handling 1000 V DC transient surges during grid fault events. IC Role / Device Role / Timing Role: Primary HV switching element in ESBC™ cascode, performing hard-switched on/off control synchronized to metering cycle timing. Use Value: 1600 V VCBO and squared RBSOA ensure no failure under lightning-induced surges; avalanche rating avoids need for external clamping diodes. |
Use Scenario: Output stage switch in 48–700 V input industrial DC-DC converter for factory automation systems. IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback or forward topology, operating at 100–150 kHz with zero-voltage switching assist. Use Value: 35 ns inductive fall time and low Cib (745 pF) enable stable high-frequency operation; RθJC = 1.25 °C/W simplifies thermal design at 100 W output. |
| Motor Driver Output Stage | Ignition Coil Driver |
Use Scenario: Half-bridge upper-leg switch in 3-phase BLDC driver for HVAC compressors, exposed to back-EMF spikes up to 900 V. IC Role / Device Role / Timing Role: High-side BJT in ESBC™ configuration, commutated by PWM controller with adaptive dead-time control. Use Value: No false triggering under 5000 V/μs dv/dt ensures precise commutation timing; 2 A IC supports 1.5 kW motor output. |
Use Scenario: Primary-side switch in automotive or industrial ignition coil driver, delivering 20–40 A peak secondary current pulses. IC Role / Device Role / Timing Role: Fast-turnoff power switch controlling primary coil energy storage and release timing (dwell control). Use Value: 137 ns inductive fall time at 0.3 A ensures precise spark timing; avalanche rating absorbs coil flyback energy without snubber. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STN12160 | 1200 V VCBO, 1.5 A IC, TO-220FP package (insulated), higher VCE(sat) (0.45 V min) | Limited to ≤600 V DC bus; requires larger heatsink due to higher conduction loss | Choose when insulation between tab and collector is mandatory and voltage stress stays below 1000 V. |
| BU508A | 1500 V VCBO, 8 A IC, no avalanche rating, slower switching (tf > 500 ns), higher Cib (1500 pF) | Not suitable for >50 kHz switching; lacks RBSOA validation and dv/dt immunity | Choose only for low-frequency (<20 kHz), non-avalanche-critical linear or switching applications with generous margin. |
Compared with STN12160 and BU508A, the FJP2160DTU uniquely combines 1600 V blocking, 150 kHz capability, avalanche ruggedness, and ESBC™-specific low-capacitance drive - making it the only option qualified for high-reliability, high-frequency smart grid and industrial power switching where both voltage headroom and switching fidelity are essential.
Availability
FJP2160DTU is available at Aetrix Electronics and suitable for smart metering, industrial HV power supplies, and motor/ignition driver designs requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for FJP2160DTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and cloud power applications.
The FJP2160DTU belongs to ON Semiconductor's ESBC™-optimized high-voltage transistor product line, engineered specifically for rugged, high-frequency switching in smart grid infrastructure, industrial automation, and high-reliability power conversion systems.
FAQ
What is the maximum safe operating voltage for FJP2160DTU in continuous DC blocking?
The FJP2160DTU has a guaranteed collector-base breakdown voltage (VCBO) of 1600 V minimum, validated per JEDEC test conditions (IC = 0.5 mA). For continuous DC blocking, derating to 1200–1400 V is recommended depending on temperature, layout, and reliability requirements. The FJP2160DTU must never be operated beyond its absolute maximum VCBO rating without external protection.
Can FJP2160DTU be used as a standalone BJT without the ESBC™ MOSFET?
Yes, the FJP2160DTU functions as a standard NPN power transistor and can be used standalone. However, its key advantages - including ultra-low Miller capacitance, fast switching, and reduced drive power - are fully realized only in ESBC™ configuration with a compatible low-voltage MOSFET like the FDC655. Standalone use sacrifices dv/dt immunity and increases required base drive current.
What is the thermal resistance from junction to case (RθJC) for FJP2160DTU?
The FJP2160DTU has a specified thermal resistance of RθJC = 1.25 °C/W, measured under standard TO-220 mounting conditions (flat metal heatsink, thermal interface material, 2.7 N·m screw torque). This value enables 100 W power dissipation with only a 125 °C temperature rise from junction to case - critical for compact industrial power designs.
Is FJP2160DTU avalanche-rated, and what does that mean for circuit design?
Yes, the FJP2160DTU is avalanche-rated with EAS = 3.5 mJ (TJ = 25 °C, 8 mH inductive load). This means it can safely absorb defined inductive energy during unclamped turn-off events - eliminating the need for external snubbers in many motor and ignition applications. Designers must still verify single-pulse and repetitive avalanche limits per application conditions.
What package type and pin configuration does FJP2160DTU use?
The FJP2160DTU uses a TO-220 3L package (JEDEC variation AB) with standard pinout: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter. The collector tab is electrically connected to Pin 2 and must be isolated from heatsink unless system grounding permits. Mechanical dimensions conform to Fairchild drawing TO220B03REV9.
FJP2160DTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- ESBC™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2 A
- Voltage - Collector Emitter Breakdown (Max):
- 800 V
- Vce Saturation (Max) @ Ib, Ic:
- 750mV @ 330mA, 1A
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 400mA, 3V
- Power - Max:
- 100 W
- Frequency - Transition:
- 5MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
FJP2160DTU FAQ
1.How can I place an order for FJP2160DTU through Aetrix?
Please submit a Request for Quotation (RFQ) for FJP2160DTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJP2160DTU reliable?
The price and inventory of FJP2160DTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP2160DTU is usually 5 days.
3.What payment methods are accepted for FJP2160DTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP2160DTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJP2160DTU?
FJP2160DTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJP2160DTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJP2160DTU?
For technical support, including FJP2160DTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP2160DTU requirements.
6.How does Aetrix verify that FJP2160DTU is sourced from the original manufacturer or authorized distributors?
All FJP2160DTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP2160DTU meets industry standards.
7.What is the process for return or replacement of FJP2160DTU?
All FJP2160DTU units undergo pre-shipment inspection (PSI). If there is an issue with FJP2160DTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJP2160DTU part is unused and in its original packaging.
Return procedure for FJP2160DTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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