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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP3305H1

Name: FJP3305H1
Brand: onsemi
SKU: FJP3305H1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJP3305H1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP3305H1.pdf

Description:: TRANS NPN 400V 4A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJP3305H1 from ON Semiconductor is a high-voltage, fast-switching NPN power transistor in TO-220 package, rated for 400 V V_CEO, 4 A DC collector current, and 75 W power dissipation at T_C = 25°C. It delivers 19–28 h_FE at I_C = 1 A and supports electronic ballast and switching regulator applications requiring robust breakdown margin and controlled switching transitions.

For engineers reviewing the FJP3305H1 datasheet, pinout, applications, or equivalent options, key selection criteria include its 400 V V_CEO, 0.5 V V_CE(sat) @ 1 A/0.2 A, 4 MHz f_T, 65 pF C_ob, and TO-220 thermal performance-critical for high-voltage flyback and resonant converter designs.

Technical Context

The FJP3305H1 employs a planar epitaxial base structure optimized for high-voltage blocking and fast minority-carrier recombination. Its h_FE classification H1 (19–28 at I_C = 1 A) ensures predictable drive requirements in linear and switching modes.

Switching behavior is characterized by t_ON = 0.8 ms, t_STG = 4.0 ms, and t_F = 0.9 ms under V_CC = 125 V, I_C = 2 A, and matched ±0.4 A base drive-enabling stable operation in hard-switched SMPS with defined safe operating area limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Withstands 400 V collector-emitter voltage before breakdown, enabling use in 380 VDC bus or 277 VAC line-fed converters.
I_C (DC)	4 A - Sustains continuous 4 A collector current with adequate heatsinking, supporting medium-power output stages.
P_C @ T_C = 25°C	75 W - Maximum dissipation at case temperature 25°C; derates linearly above 25°C per Figure 11.
h_FE (H1 grade)	19–28 @ V_CE = 5 V, I_C = 1 A - Tight DC current gain bin ensures consistent base drive sizing across production lots.
V_CE(sat)	0.5 V @ I_C = 1 A, I_B = 0.2 A - Low saturation voltage minimizes conduction loss in saturated-switch applications.
f_T	4 MHz @ V_CE = 10 V, I_C = 0.5 A - Bandwidth supports moderate-frequency switching up to ~200 kHz with stable gain.
C_ob	65 pF @ V_CB = 10 V, f = 1 MHz - Output capacitance impacts turn-off energy and snubber design in high-dV/dt circuits.

Pinout & Package

Package: TO-220 (JEDEC variation AB), 3-lead through-hole, vertical mounting with metal tab electrically connected to collector. Thermal resistance R_θJC = 1.67°C/W typical.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives forward bias current to saturate transistor; requires ≥0.2 A for full 1 A I_C conduction.
2 (Collector)	High-voltage output node	Connected to metal tab; must be isolated from heatsink unless heatsink is at same potential as collector.
3 (Emitter)	Reference/return path	Serves as common emitter node; low-inductance connection critical for switching stability.

Key Features

Feature	Design Value
High-voltage capability	700 V V_CBO and 400 V V_CEO support operation across universal AC input ranges without derating.
Fast switching speed	0.8 ms turn-on, 4.0 ms storage, and 0.9 ms fall time enable efficient operation in 50–200 kHz SMPS topologies.
H1 h_FE binning	Guaranteed 19–28 DC current gain ensures predictable base drive circuit design and reduces variability in production.
TO-220 thermal performance	1.67°C/W junction-to-case resistance allows 75 W dissipation with standard heatsinking at T_C = 25°C.

Applications

Electronic Ballast	Switching Regulator
Use Scenario: High-frequency fluorescent lamp control in commercial lighting fixtures with 220–277 VAC input. IC Role / Device Role / Timing Role: Main switch in half-bridge resonant inverter stage, driven by dedicated gate driver IC. Use Value: 400 V V_CEO withstands reflected transients during lamp ignition; 0.5 V V_CE(sat) reduces conduction loss at 1–2 A peak current.	Use Scenario: Primary-side switch in offline flyback converters delivering 20–40 W to industrial sensors and IoT gateways. IC Role / Device Role / Timing Role: Power switch modulating energy transfer from primary to secondary winding at 65–100 kHz. Use Value: 65 pF C_ob and 4 MHz f_T support stable switching with minimal ringing; TO-220 package enables direct heatsink mounting.
DC-DC Converter	Motor Drive
Use Scenario: Step-down converter in 48 V telecom power distribution systems powering baseband processing units. IC Role / Device Role / Timing Role: High-side switch in non-synchronous buck topology operating at fixed 100 kHz frequency. Use Value: 75 W P_C rating accommodates 3 A load current with 1.5 V drop, enabling compact thermal design.	Use Scenario: Low-cost unidirectional drive for 24 V brushed DC motors in HVAC damper actuators and access control systems. IC Role / Device Role / Timing Role: Saturated switch controlling motor on/off state via microcontroller GPIO and base resistor network. Use Value: H1 h_FE bin ensures reliable saturation with ≤0.5 A base current, simplifying drive circuitry and reducing BOM count.

Electronic Ballast

Switching Regulator

Use Scenario: High-frequency fluorescent lamp control in commercial lighting fixtures with 220–277 VAC input.

IC Role / Device Role / Timing Role: Main switch in half-bridge resonant inverter stage, driven by dedicated gate driver IC.

Use Value: 400 V V_CEO withstands reflected transients during lamp ignition; 0.5 V V_CE(sat) reduces conduction loss at 1–2 A peak current.

Use Scenario: Primary-side switch in offline flyback converters delivering 20–40 W to industrial sensors and IoT gateways.

IC Role / Device Role / Timing Role: Power switch modulating energy transfer from primary to secondary winding at 65–100 kHz.

Use Value: 65 pF C_ob and 4 MHz f_T support stable switching with minimal ringing; TO-220 package enables direct heatsink mounting.

DC-DC Converter

Motor Drive

Use Scenario: Step-down converter in 48 V telecom power distribution systems powering baseband processing units.

IC Role / Device Role / Timing Role: High-side switch in non-synchronous buck topology operating at fixed 100 kHz frequency.

Use Value: 75 W P_C rating accommodates 3 A load current with 1.5 V drop, enabling compact thermal design.

Use Scenario: Low-cost unidirectional drive for 24 V brushed DC motors in HVAC damper actuators and access control systems.

IC Role / Device Role / Timing Role: Saturated switch controlling motor on/off state via microcontroller GPIO and base resistor network.

Use Value: H1 h_FE bin ensures reliable saturation with ≤0.5 A base current, simplifying drive circuitry and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FJP3305H2	Higher h_FE bin: 26–35 @ I_C = 1 A; otherwise identical absolute max ratings and electrical specs.	Lower base drive requirement for same I_C; preferred where drive current is constrained.	Select H2 if base current budget is limited; verify stability under same thermal conditions.
MJD32C	Lower V_CEO (100 V), higher I_C (10 A), TO-252 package; not HV-rated but higher current capacity.	Not suitable for >100 V applications; used in low-voltage motor drivers and solenoid controls.	Use only in sub-100 V systems; requires PCB layout change due to surface-mount TO-252 footprint.

Compared with FJP3305H1, FJP3305H2 offers higher h_FE for reduced base drive burden while maintaining identical voltage and thermal specs, whereas MJD32C trades high-voltage capability for higher current and surface-mount convenience-making it unsuitable for direct replacement in 400 V designs.

Availability

FJP3305H1 is available at Aetrix Electronics and suitable for electronic ballast, switching regulator, and DC-DC converter applications requiring stable component supply and legacy design continuity.

Supply support for FJP3305H1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and edge applications.

The FJP3305H1 belongs to ON Semiconductor's legacy high-voltage bipolar power transistor product line, designed specifically for cost-sensitive, medium-power switching applications in lighting and power conversion where ruggedness and proven reliability are prioritized over ultra-high frequency operation.

FAQ

What is the maximum collector-emitter voltage rating for FJP3305H1?

The FJP3305H1 has a maximum collector-emitter voltage (V_CEO) rating of 400 V at T_C = 25°C. This rating applies under DC conditions with zero base current and defines the upper limit for safe operation before avalanche breakdown occurs. Derating is required at elevated case temperatures per the datasheet's safe operating area curves.

Is FJP3305H1 still recommended for new designs?

No, FJP3305H1 is discontinued and not recommended for new designs per ON Semiconductor's official documentation. It remains available for legacy production and repair, but designers should consult ON Semiconductor representatives for approved replacements such as the FJP3305H2 or newer alternatives with extended lifecycle support.

What is the h_FE range specified for FJP3305H1?

The FJP3305H1 is binned to the H1 classification, with a guaranteed DC current gain (h_FE) range of 19 to 28 when measured at V_CE = 5 V and I_C = 1 A. This binning ensures consistent base drive requirements across units and supports reliable saturation in linear and switching applications.

Which package type does FJP3305H1 use, and how is the collector terminal connected?

FJP3305H1 uses the TO-220AB package, a 3-lead through-hole outline with the collector internally connected to the metal tab. The tab must be electrically isolated from the heatsink unless the heatsink is held at collector potential-otherwise, insulating hardware and thermal pads are required to prevent short circuits.

What are the key switching timing parameters for FJP3305H1?

FJP3305H1 specifies t_ON = 0.8 ms, t_STG = 4.0 ms, and t_F = 0.9 ms under test conditions of V_CC = 125 V, I_C = 2 A, and ±0.4 A base drive. These values define the device's suitability for hard-switched topologies up to ~200 kHz and inform snubber and driver design choices.

FJP3305H1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 1A, 4A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 19 @ 1A, 5V

Power - Max:: 75 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP3305H1 FAQ

1.How can I place an order for FJP3305H1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP3305H1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP3305H1 reliable?

The price and inventory of FJP3305H1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP3305H1 is usually 5 days.

3.What payment methods are accepted for FJP3305H1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP3305H1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP3305H1?

FJP3305H1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP3305H1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP3305H1?

For technical support, including FJP3305H1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP3305H1 requirements.

6.How does Aetrix verify that FJP3305H1 is sourced from the original manufacturer or authorized distributors?

All FJP3305H1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP3305H1 meets industry standards.

7.What is the process for return or replacement of FJP3305H1?

All FJP3305H1 units undergo pre-shipment inspection (PSI). If there is an issue with FJP3305H1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP3305H1 part is unused and in its original packaging.

Return procedure for FJP3305H1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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