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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP3305H1TU

Name: FJP3305H1TU
Brand: onsemi
SKU: FJP3305H1TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJP3305H1TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP3305H1TU.pdf

Description:: TRANS NPN 400V 4A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJP3305H1TU from ON Semiconductor is a high-voltage, fast-switching NPN power transistor in TO-220 package, rated for 400 V V_CEO, 4 A DC collector current, and 75 W power dissipation at T_C = 25°C. It delivers 19–28 h_FE at I_C = 1 A and supports electronic ballast and switching regulator applications with 0.5 V V_CE(sat) at I_C = 1 A / I_B = 0.2 A.

For engineers reviewing the FJP3305H1TU datasheet, pinout, applications, or equivalent options, key selection criteria include its 400 V breakdown rating, 0.8 ms turn-on time, 4.0 ms storage time, TO-220 thermal performance, and H1 h_FE classification for consistent gain matching in parallel or high-reliability switching designs.

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for high-voltage switching rather than linear amplification. Its design emphasizes low saturation voltage under controlled base drive (I_B = 0.2 A @ I_C = 1 A) and fast transient response, evidenced by t_ON = 0.8 ms, t_STG = 4.0 ms, and t_F = 0.9 ms under specified test conditions (V_CC = 125 V, R_L = 62.5 Ω).

The FJP3305H1TU features a rugged safe operating area (SOA), validated for reverse-biased and forward-biased operation up to 100 V/10 A in pulse mode. Its 65 pF output capacitance (C_ob) and 4 MHz f_T reflect trade-offs between switching speed and high-voltage robustness, targeting ballast and SMPS primary-side switch roles where dV/dt immunity and avalanche capability are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Withstands 400 V collector-emitter voltage before breakdown, enabling use in 380 VAC rectified bus or 400 VDC SMPS primary stages.
I_C (DC)	4 A - Supports continuous load currents up to 4 A with adequate heatsinking, suitable for medium-power switching loads.
P_C (T_C = 25°C)	75 W - Maximum steady-state power dissipation at case temperature of 25°C; derates linearly above this temperature per Fig. 11.
h_FE (H1 grade)	19–28 - Guaranteed DC current gain range at V_CE = 5 V, I_C = 1 A, ensuring predictable base drive requirements in production designs.
V_CE(sat)	0.5 V @ I_C = 1 A, I_B = 0.2 A - Low saturation voltage minimizes conduction loss and heat generation during on-state operation.
t_STG	4.0 ms - Storage time determines minimum off-time in hard-switched topologies; impacts maximum practical switching frequency.
C_ob	65 pF @ V_CB = 10 V - Output capacitance affects turn-off energy and snubber design in flyback or resonant converters.

Pinout & Package

Package: TO-220 (JEDEC variation AB), through-hole, single-ended heat sink mounting. Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives base current to bias transistor into saturation or cutoff; requires external current-limiting resistor for safe drive.
2 (Collector)	High-voltage power terminal	Connected internally to metal tab; electrically and thermally coupled to heatsink; must be isolated if heatsink is grounded.
3 (Emitter)	Power return path	Serves as common reference for load current; carries full collector current and influences ground loop integrity in high-dV/dt circuits.

Key Features

Feature	Design Value
High-voltage capability	700 V V_CBO and 400 V V_CEO ratings support operation across 380 VAC mains-derived rails without additional clamping.
Fast switching performance	0.8 ms turn-on, 4.0 ms storage, and 0.9 ms fall time enable reliable operation up to ~10 kHz in hard-switched topologies.
H1 h_FE classification	Guaranteed 19–28 DC current gain ensures consistent base drive sizing and reduces binning overhead in volume manufacturing.
TO-220 thermal interface	Tab-connected collector enables direct mechanical and thermal attachment to heatsinks, supporting 75 W dissipation with proper mounting pressure and thermal interface material.

Applications

Electronic Ballast Control	Switching Regulator Primary Switch
Use Scenario: Driving resonant LC tank in fluorescent lamp ballasts operating from rectified 220–240 VAC mains. IC Role / Device Role / Timing Role: Main switching element controlling lamp current via high-frequency (20–60 kHz) square-wave excitation. Use Value: 400 V V_CEO withstands peak rectified line voltage; 0.5 V V_CE(sat) reduces conduction loss during on-time, improving efficiency and thermal margin.	Use Scenario: High-side switch in offline flyback or forward converter powering industrial control logic or auxiliary supplies. IC Role / Device Role / Timing Role: Primary-side power switch turning on/off transformer primary winding under PWM controller command. Use Value: 4 ms storage time allows stable timing in fixed-frequency 50–100 kHz designs; TO-220 package simplifies heatsinking in compact enclosures.
DC Motor Drive Stage	Induction Heater Half-Bridge
Use Scenario: Medium-power brushed DC motor driver in HVAC blowers or power tools, operating from 300 VDC bus. IC Role / Device Role / Timing Role: Single-ended switch controlling motor current direction and duty cycle in H-bridge half-leg configuration. Use Value: 75 W power rating supports intermittent 4 A surge loads; 65 pF C_ob limits capacitive turn-off losses during PWM commutation.	Use Scenario: Low-side switch in resonant half-bridge for induction heating coils in domestic cooktops or industrial heating systems. IC Role / Device Role / Timing Role: Fast-turning switch synchronizing with complementary high-side device to generate high-frequency AC in series-resonant tank. Use Value: 4 MHz f_T supports clean gate drive edge fidelity; rugged SOA withstands inductive kickback during zero-voltage switching transitions.

Electronic Ballast Control

Switching Regulator Primary Switch

Use Scenario: Driving resonant LC tank in fluorescent lamp ballasts operating from rectified 220–240 VAC mains.

IC Role / Device Role / Timing Role: Main switching element controlling lamp current via high-frequency (20–60 kHz) square-wave excitation.

Use Value: 400 V V_CEO withstands peak rectified line voltage; 0.5 V V_CE(sat) reduces conduction loss during on-time, improving efficiency and thermal margin.

Use Scenario: High-side switch in offline flyback or forward converter powering industrial control logic or auxiliary supplies.

IC Role / Device Role / Timing Role: Primary-side power switch turning on/off transformer primary winding under PWM controller command.

Use Value: 4 ms storage time allows stable timing in fixed-frequency 50–100 kHz designs; TO-220 package simplifies heatsinking in compact enclosures.

DC Motor Drive Stage

Induction Heater Half-Bridge

Use Scenario: Medium-power brushed DC motor driver in HVAC blowers or power tools, operating from 300 VDC bus.

IC Role / Device Role / Timing Role: Single-ended switch controlling motor current direction and duty cycle in H-bridge half-leg configuration.

Use Value: 75 W power rating supports intermittent 4 A surge loads; 65 pF C_ob limits capacitive turn-off losses during PWM commutation.

Use Scenario: Low-side switch in resonant half-bridge for induction heating coils in domestic cooktops or industrial heating systems.

IC Role / Device Role / Timing Role: Fast-turning switch synchronizing with complementary high-side device to generate high-frequency AC in series-resonant tank.

Use Value: 4 MHz f_T supports clean gate drive edge fidelity; rugged SOA withstands inductive kickback during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD3305G	Dual NPN in TO-252; lower V_CEO (300 V); 3 A I_C; no H1 grading.	Not suitable for 400 V bus applications; limited to <300 VDC systems; surface-mount only.	Select only if board space constraints require SMT and voltage requirement is ≤300 V.
FJPF3305	Same die in TO-3P package; identical electrical specs; higher thermal resistance due to plastic package.	Lower power density; less effective heatsinking than TO-220 tab; same voltage/current capability.	Choose when legacy TO-3P footprint compatibility is required and thermal margin permits.

Compared with MJD3305G and FJPF3305, the FJP3305H1TU provides optimal balance of 400 V rating, TO-220 thermal performance, and H1 gain binning-making it uniquely suited for cost-sensitive, medium-power, high-voltage switching where reliability and manufacturability are prioritized over SMT or ultra-high-frequency operation.

Availability

FJP3305H1TU is available at Aetrix Electronics and suitable for electronic ballast control, switching regulator primary switching, and DC motor drive applications requiring stable component supply and long-term industrial availability.

Supply support for FJP3305H1TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, cloud, and consumer markets.

The FJP3305H1TU belongs to ON Semiconductor's high-voltage bipolar power transistor product line, engineered specifically for robust, cost-effective switching in lighting, power conversion, and motor control systems operating from rectified AC mains.

FAQ

Is FJP3305H1TU recommended for new designs?

No, the FJP3305H1TU is marked as discontinued and not recommended for new designs per ON Semiconductor documentation. It remains available for legacy system repair, maintenance, and continuity support. Engineers designing new products should consult ON Semiconductor's current portfolio for qualified replacements with updated specifications and extended lifecycle support.

What does the 'H1' suffix indicate in FJP3305H1TU?

The 'H1' suffix denotes the h_FE (DC current gain) classification band: guaranteed 19–28 at V_CE = 5 V and I_C = 1 A. This binning ensures consistent base drive requirements across units, reducing design margin uncertainty and simplifying production calibration for FJP3305H1TU-based circuits.

Can FJP3305H1TU replace FJP3305 in existing PCB layouts?

Yes, FJP3305H1TU is a direct replacement for FJP3305 in the same TO-220 package with identical pinout (Base–Collector–Emitter). The H1 suffix reflects tighter h_FE binning but does not alter electrical ratings, thermal behavior, or mechanical fit-ensuring drop-in compatibility for FJP3305H1TU in legacy FJP3305 designs.

What is the maximum operating junction temperature for FJP3305H1TU?

The maximum rated junction temperature (T_J) for FJP3305H1TU is 150°C, as specified in its Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation. Thermal design must ensure that actual T_J stays within this bound under worst-case ambient and power dissipation conditions.

Does FJP3305H1TU have avalanche rating or ruggedness specification?

The FJP3305H1TU datasheet does not specify an avalanche energy rating (E_AS) or ruggedness test data. While its SOA curves (Fig. 9–10) demonstrate capability under transient overloads, designers requiring guaranteed avalanche tolerance should verify with ON Semiconductor's application engineering team or select devices explicitly rated for repetitive avalanche operation.

FJP3305H1TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 1A, 4A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 8 @ 2A, 5V

Power - Max:: 75 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP3305H1TU FAQ

1.How can I place an order for FJP3305H1TU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP3305H1TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP3305H1TU reliable?

The price and inventory of FJP3305H1TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP3305H1TU is usually 5 days.

3.What payment methods are accepted for FJP3305H1TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP3305H1TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP3305H1TU?

FJP3305H1TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP3305H1TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP3305H1TU?

For technical support, including FJP3305H1TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP3305H1TU requirements.

6.How does Aetrix verify that FJP3305H1TU is sourced from the original manufacturer or authorized distributors?

All FJP3305H1TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP3305H1TU meets industry standards.

7.What is the process for return or replacement of FJP3305H1TU?

All FJP3305H1TU units undergo pre-shipment inspection (PSI). If there is an issue with FJP3305H1TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP3305H1TU part is unused and in its original packaging.

Return procedure for FJP3305H1TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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