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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP3305H2TU

Name: FJP3305H2TU
Brand: onsemi
SKU: FJP3305H2TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJP3305H2TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP3305H2TU.pdf

Description:: TRANS NPN 400V 4A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJP3305H2TU from ON Semiconductor is a high-voltage, fast-switching NPN power transistor in TO-220 package, rated for 400 V V_CEO, 4 A DC collector current, and 75 W power dissipation at T_C = 25°C. It delivers 8 A pulsed current capability and supports electronic ballast and switching regulator applications requiring robust breakdown margin and controlled switching transitions.

For engineers reviewing the FJP3305H2TU datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO/V_CBO ratings, h_FE classification (H2 grade), saturation voltage under defined I_C/I_B conditions, and safe operating area limits under reverse- and forward-biased pulse conditions.

Technical Context

The FJP3305H2TU employs a planar epitaxial base structure optimized for high-voltage blocking and fast minority-carrier recombination. Its h_FE classification H2 specifies DC current gain of 26–35 at V_CE = 5 V, I_C = 2 A, and its switching performance is characterized by t_ON = 0.8 ms, t_STG = 4.0 ms, and t_F = 0.9 ms under standardized 125 V, 2 A resistive load conditions.

It features a maximum output capacitance (C_ob) of 65 pF at V_CB = 10 V, f = 1 MHz, and operates with junction temperature up to 150°C. The device is not recommended for new designs per official discontinuation notice, and its safe operating area is validated for single-pulse operation with defined thermal derating above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Maximum collector-emitter voltage before avalanche breakdown under open-base condition; defines usable bus voltage headroom in flyback or half-bridge topologies.
I_C (DC)	4 A - Continuous collector current rating at T_C = 25°C; determines steady-state conduction capability without forced cooling.
P_C	75 W - Maximum collector power dissipation at T_C = 25°C; sets thermal design baseline for heatsink sizing and ambient derating.
h_FE (H2)	26–35 - DC current gain range at V_CE = 5 V, I_C = 2 A; defines required base drive current for target collector current in linear or saturated switching modes.
V_CE(sat)	1.0 V - Saturation voltage at I_C = 4 A, I_B = 1 A; directly impacts conduction loss and thermal rise in hard-switched applications.
f_T	4 MHz - Current gain bandwidth product at V_CE = 10 V, I_C = 0.5 A; indicates upper limit for small-signal amplification or high-frequency switching fidelity.
t_STG	4.0 ms - Storage time under specified test conditions; critical for minimizing turn-off delay and preventing cross-conduction in complementary switch pairs.

Pinout & Package

Package: TO-220 (JEDEC variation AB, 3-lead, through-hole). Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter. The metal tab is electrically connected to the collector and must be isolated from heatsink unless circuit topology permits common-collector mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives forward bias current to initiate and sustain conduction; requires driver capable of delivering ≥1 A peak for full 4 A I_C saturation.
2 (Collector)	Main current output terminal	Connected internally to metal tab; carries full load current and must be thermally coupled to heatsink; electrically referenced to system high-side potential.
3 (Emitter)	Current return path	Serves as reference node for base drive and load return; layout must minimize inductance to preserve switching speed and reduce voltage overshoot.

Key Features

Feature	Design Value
High-voltage blocking	V_CBO = 700 V ensures margin against transient overvoltage in offline SMPS and lamp ballast circuits.
Fast switching speed	t_ON/t_F ≤ 0.8/0.9 ms enables operation up to ~1 kHz in hard-switched converters without excessive switching loss.
H2 h_FE classification	Guaranteed 26–35 gain range simplifies base drive design and improves consistency across production lots.
TO-220 mechanical standardization	Enables drop-in replacement in legacy PCB footprints designed for JEDEC TO-220AB packages with 2.54 mm lead pitch.

Applications

Electronic Ballast Control	Switching Regulator Output Stage
Use Scenario: Driving resonant LC tank in fluorescent lamp ballasts operating from rectified 220–240 VAC mains. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge inverter stage, commutated at 20–60 kHz. Use Value: 400 V V_CEO rating provides sufficient margin above 340 V DC bus, while 4 A I_C supports lamp currents up to 35 W.	Use Scenario: Primary-side switch in offline flyback or forward converter powering industrial control modules. IC Role / Device Role / Timing Role: High-side power switch turning on/off energy transfer from primary winding to secondary. Use Value: 75 W P_C and 150°C T_J allow reliable operation with passive heatsinking in enclosed enclosures up to 60°C ambient.
DC Motor Drive (Low-Frequency)	Inductive Load Switching
Use Scenario: PWM-controlled unidirectional drive for 24–48 V brushed DC motors in HVAC actuators or valve positioners. IC Role / Device Role / Timing Role: Low-frequency (≤500 Hz) power switch interfacing microcontroller GPIO via base driver. Use Value: 8 A I_CP handles motor stall currents; V_CE(sat) ≤ 1.0 V minimizes I²R loss during 100% duty cycle operation.	Use Scenario: Solid-state replacement for electromechanical relays controlling solenoids, contactors, or heating elements. IC Role / Device Role / Timing Role: Single-ended switch isolating inductive loads from 24–125 V DC supply rails. Use Value: Reverse-biased SOA validated to 100 V/2 A pulses ensures survivability during L·di/dt turn-off transients without snubber networks.

Electronic Ballast Control

Switching Regulator Output Stage

Use Scenario: Driving resonant LC tank in fluorescent lamp ballasts operating from rectified 220–240 VAC mains.

IC Role / Device Role / Timing Role: Main switching transistor in half-bridge inverter stage, commutated at 20–60 kHz.

Use Value: 400 V V_CEO rating provides sufficient margin above 340 V DC bus, while 4 A I_C supports lamp currents up to 35 W.

Use Scenario: Primary-side switch in offline flyback or forward converter powering industrial control modules.

IC Role / Device Role / Timing Role: High-side power switch turning on/off energy transfer from primary winding to secondary.

Use Value: 75 W P_C and 150°C T_J allow reliable operation with passive heatsinking in enclosed enclosures up to 60°C ambient.

DC Motor Drive (Low-Frequency)

Inductive Load Switching

Use Scenario: PWM-controlled unidirectional drive for 24–48 V brushed DC motors in HVAC actuators or valve positioners.

IC Role / Device Role / Timing Role: Low-frequency (≤500 Hz) power switch interfacing microcontroller GPIO via base driver.

Use Value: 8 A I_CP handles motor stall currents; V_CE(sat) ≤ 1.0 V minimizes I²R loss during 100% duty cycle operation.

Use Scenario: Solid-state replacement for electromechanical relays controlling solenoids, contactors, or heating elements.

IC Role / Device Role / Timing Role: Single-ended switch isolating inductive loads from 24–125 V DC supply rails.

Use Value: Reverse-biased SOA validated to 100 V/2 A pulses ensures survivability during L·di/dt turn-off transients without snubber networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FJP3305TU	H1 h_FE grade (19–28), otherwise identical absolute max ratings and electrical characteristics.	Lower guaranteed gain may require increased base drive current to achieve same I_C; suitable where gain tolerance is less critical.	Select FJP3305TU only if H1-grade gain spread meets system base drive capability and thermal budget.
MJ13009	Higher V_CEO (450 V), lower I_C (2 A), different TO-220 pinout (B-C-E vs B-C-E but internal tab connection differs).	Not pin-compatible due to collector-tab isolation differences; requires PCB redesign and thermal interface verification.	Consider MJ13009 only when higher voltage margin is mandatory and layout revision is acceptable.

Compared with FJP3305H2TU, FJP3305TU offers reduced h_FE consistency but identical packaging and voltage/current ratings, whereas MJ13009 trades current capacity for enhanced voltage rating and introduces mechanical compatibility constraints requiring physical validation.

Availability

FJP3305H2TU is available at Aetrix Electronics and suitable for electronic ballast, switching regulator, and industrial relay-replacement applications requiring stable component supply despite end-of-life status.

Supply support for FJP3305H2TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic solutions for automotive, industrial, cloud power, and IoT applications.

The FJP3305H2TU belongs to ON Semiconductor's legacy high-voltage bipolar power transistor family, originally developed by Fairchild Semiconductor for cost-sensitive, medium-power switching applications demanding ruggedness and predictable gain behavior.

FAQ

Is FJP3305H2TU still in active production?

No, FJP3305H2TU is discontinued and not recommended for new designs per ON Semiconductor's official documentation. However, Aetrix Electronics maintains limited legacy inventory with full traceability and supports existing production runs through lifecycle coordination services.

What does the "H2" suffix indicate in FJP3305H2TU?

The "H2" suffix denotes the h_FE gain classification grade: FJP3305H2TU guarantees a DC current gain of 26–35 at V_CE = 5 V and I_C = 2 A, distinguishing it from the H1 grade (19–28) and ensuring tighter base drive predictability in production systems.

Can FJP3305H2TU be used in place of FJP3305TU?

Yes, FJP3305H2TU is mechanically and electrically compatible with FJP3305TU, sharing identical TO-220 package, pinout, voltage/current ratings, and thermal specifications. The only difference is the guaranteed h_FE range-H2 offers higher minimum gain, allowing potential reduction in base drive current.

What is the maximum allowable case temperature for continuous operation of FJP3305H2TU?

The FJP3305H2TU has a maximum junction temperature of 150°C and a thermal resistance θ_JC of approximately 1.67°C/W. For continuous DC operation, case temperature must remain ≤125°C to maintain 25°C ambient derating margin; actual limit depends on heatsink efficiency and airflow.

Does FJP3305H2TU require a heatsink in all applications?

Yes, FJP3305H2TU requires external heatsinking for any application dissipating >1 W continuously. At its full 4 A / 1.0 V_CE(sat) conduction loss (4 W), even modest thermal resistance (e.g., 10°C/W) raises case temperature by 40°C above ambient-necessitating a properly mounted heatsink to stay within 150°C T_J.

FJP3305H2TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 1A, 4A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 26 @ 1A, 5V

Power - Max:: 75 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP3305H2TU FAQ

1.How can I place an order for FJP3305H2TU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP3305H2TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP3305H2TU reliable?

The price and inventory of FJP3305H2TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP3305H2TU is usually 5 days.

3.What payment methods are accepted for FJP3305H2TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP3305H2TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP3305H2TU?

FJP3305H2TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP3305H2TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP3305H2TU?

For technical support, including FJP3305H2TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP3305H2TU requirements.

6.How does Aetrix verify that FJP3305H2TU is sourced from the original manufacturer or authorized distributors?

All FJP3305H2TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP3305H2TU meets industry standards.

7.What is the process for return or replacement of FJP3305H2TU?

All FJP3305H2TU units undergo pre-shipment inspection (PSI). If there is an issue with FJP3305H2TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP3305H2TU part is unused and in its original packaging.

Return procedure for FJP3305H2TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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