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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP3307DH2TU

Name: FJP3307DH2TU
Brand: onsemi
SKU: FJP3307DH2TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJP3307DH2TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP3307DH2TU.pdf

Description:: TRANS NPN 400V 8A TO-220-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,006

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Product details

Overview

FJP3307DH2TU from ON Semiconductor is a high-voltage, fast-switching NPN power transistor in TO-220 package with built-in collector-emitter diode, 400 V V_CEO, 8 A DC collector current, and 80 W power dissipation at T_C = 25°C. It is designed for electronic ballasts and switch-mode power supplies requiring robust switching under high-voltage transient conditions.

For engineers reviewing the FJP3307DH2TU datasheet, pinout, applications, or equivalent options, key selection criteria include its H2-grade h_FE (26–39 at I_C = 2 A), low t_F (150 ns), and integrated anti-parallel diode enabling simplified flyback and snubberless topologies.

Technical Context

The FJP3307DH2TU employs a planar epitaxial base structure optimized for high-voltage blocking and fast minority-carrier recombination. Its internal diode is monolithically integrated between collector and emitter, eliminating external diode placement in inductive load commutation paths.

It operates with specified safe operating area (SOA) limits up to 100 V and 10 A in forward-biased mode (1 ms pulse), and supports reverse-biased SOA up to 50 V and 100 A with active gate control. Storage time (t_STG) is characterized at 2.3 μs under V_CC = 30 V, I_C = 5 A, and V_BE(OFF) = −5 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Sustains 400 V collector-emitter voltage before breakdown, enabling use in 380 VAC rectified bus applications.
I_C (DC)	8 A - Continuous collector current rating defines maximum steady-state output capability without forced cooling.
P_C @ T_C = 25°C	80 W - Maximum thermal power dissipation at case temperature of 25°C; derates linearly above 25°C per Figure 7.
h_FE (H2 grade)	26–39 - Confirmed DC current gain range at V_CE = 5 V, I_C = 2 A, ensuring predictable base drive sizing.
t_F	150 ns - Measured fall time under V_CC = 30 V, I_C = 5 A, R_L = 50 Ω, defining minimum achievable switching frequency.
V_F (diode)	2.5 V @ I_C = 3 A - Forward voltage of integrated collector-emitter diode, critical for snubber loss calculation and conduction efficiency.
C_ob	60 pF @ V_CB = 10 V - Output capacitance determines turn-on losses and EMI behavior in hard-switched converters.

Pinout & Package

Package: TO-220AB (JEDEC variation AB), through-hole, single-ended heat sink mounting. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives base current to saturate or cut off the transistor; requires ≥0.4 A drive for full saturation at I_C = 2 A.
2 (Collector)	High-side power output node	Connected to high-voltage rail (up to 400 V); carries full load current and integrates cathode of internal diode.
3 (Emitter)	Power return and reference node	Serves as common emitter for NPN operation and anode of internal diode; must be low-inductance grounded in SMPS layouts.

Key Features

Feature	Design Value
Built-in collector-emitter diode	Monolithic integration eliminates discrete diode placement, reduces PCB area and parasitic inductance in flyback/LLC snubbers.
H2-grade h_FE binning	Guaranteed 26–39 h_FE at I_C = 2 A ensures consistent base drive requirements across production lots.
Fast fall time (150 ns)	Enables operation up to ~1 MHz in resonant converters where switching loss dominates efficiency.
Reverse-biased SOA compliance	Validated up to 100 A peak current at 50 V with 100 μs pulse width, supporting reliable inductive turn-off.
TO-220 mechanical standardization	Compatible with industry-standard heatsinks and mounting hardware, simplifying thermal design and manufacturing.

Applications

Electronic Ballast	Switch-Mode Power Supply
Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge inverter stage driving resonant tank. Use Value: Integrated diode enables self-commutating operation during zero-voltage switching transitions, reducing EMI and improving lamp life.	Use Scenario: Primary-side switching in offline AC/DC adapters and industrial power supplies. IC Role / Device Role / Timing Role: High-voltage switch in flyback or forward converter topology handling 380 VDC input. Use Value: 400 V V_CEO and 8 A I_C support universal-input (85–265 VAC) designs with margin for line surges and reflected transients.
Induction Heating	Motor Drive Inverter
Use Scenario: Resonant power switching in domestic induction cooktops. IC Role / Device Role / Timing Role: Half-bridge upper-leg switch operating at 20–100 kHz with high dV/dt stress. Use Value: 700 V V_CBO and fast t_F ensure reliable operation under high dv/dt and repetitive avalanche conditions.	Use Scenario: Low-cost BLDC motor phase switching in appliance and HVAC fans. IC Role / Device Role / Timing Role: Discrete NPN switch in 3-phase inverter leg with external freewheeling diodes. Use Value: TO-220 package allows direct heatsink mounting; H2 h_FE bin enables stable base drive across temperature and unit-to-unit variance.

Electronic Ballast

Switch-Mode Power Supply

Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems.

IC Role / Device Role / Timing Role: Main switching transistor in half-bridge inverter stage driving resonant tank.

Use Value: Integrated diode enables self-commutating operation during zero-voltage switching transitions, reducing EMI and improving lamp life.

Use Scenario: Primary-side switching in offline AC/DC adapters and industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage switch in flyback or forward converter topology handling 380 VDC input.

Use Value: 400 V V_CEO and 8 A I_C support universal-input (85–265 VAC) designs with margin for line surges and reflected transients.

Induction Heating

Motor Drive Inverter

Use Scenario: Resonant power switching in domestic induction cooktops.

IC Role / Device Role / Timing Role: Half-bridge upper-leg switch operating at 20–100 kHz with high dV/dt stress.

Use Value: 700 V V_CBO and fast t_F ensure reliable operation under high dv/dt and repetitive avalanche conditions.

Use Scenario: Low-cost BLDC motor phase switching in appliance and HVAC fans.

IC Role / Device Role / Timing Role: Discrete NPN switch in 3-phase inverter leg with external freewheeling diodes.

Use Value: TO-220 package allows direct heatsink mounting; H2 h_FE bin enables stable base drive across temperature and unit-to-unit variance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD3307H2	Same H2 h_FE bin, identical V_CEO/I_C/P_C, but in DPAK surface-mount package (no TO-220 footprint).	Requires PCB redesign for SMT assembly; unsuitable for through-hole or heatsink-mounted legacy designs.	Select when board space is constrained and thermal management uses copper pour instead of external heatsink.
FJP3307D	No H-grade suffix; unspecified h_FE range (8–40), wider parameter spread, no guaranteed binning.	Acceptable for non-critical, cost-sensitive applications where base drive margin is generous.	Select only if h_FE consistency is not required and qualification testing confirms performance stability.

Compared with MJD3307H2 and FJP3307D, the FJP3307DH2TU provides guaranteed H2 h_FE binning and TO-220 mechanical compatibility-critical for retrofitting existing ballast and SMPS designs without layout changes or thermal revalidation.

Availability

FJP3307DH2TU is available at Aetrix Electronics and suitable for electronic ballasts, switch-mode power supplies, and induction heating systems requiring stable component supply, long-term manufacturability, and consistent H2-grade parametric performance.

Supply support for FJP3307DH2TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The FJP3307DH2TU belongs to ON Semiconductor's legacy Fairchild power transistor portfolio, engineered specifically for high-reliability, high-voltage switching in lighting and power conversion applications where ruggedness and parametric consistency are essential.

FAQ

What is the guaranteed h_FE range for FJP3307DH2TU?

The FJP3307DH2TU is binned to the H2 grade, guaranteeing a DC current gain (h_FE) of 26–39 at V_CE = 5 V and I_C = 2 A. This tight specification ensures predictable base drive requirements and stable operation across temperature and production lots, unlike the unbinned FJP3307D variant.

Does FJP3307DH2TU include an integrated diode, and what is its forward voltage?

Yes, the FJP3307DH2TU features a monolithically integrated diode between collector and emitter. Its forward voltage (V_F) is 2.5 V at I_C = 3 A, enabling simplified snubberless operation in flyback and resonant converters without external diode placement.

What is the maximum allowable case temperature for continuous operation of FJP3307DH2TU?

The FJP3307DH2TU has a maximum junction temperature (T_J) of 150°C and a storage temperature range of −55°C to +150°C. Its power dissipation derates linearly above 25°C case temperature per Figure 7 in the datasheet, reaching zero at approximately 175°C case temperature.

Can FJP3307DH2TU replace FJP3307D in existing designs?

Yes, the FJP3307DH2TU is a direct drop-in replacement for FJP3307D in TO-220 layouts, sharing identical pinout, package dimensions, and absolute maximum ratings. The added value is guaranteed H2 h_FE binning, which improves base drive predictability without requiring PCB or thermal redesign.

What is the safe operating area (SOA) limit for FJP3307DH2TU in forward-biased switching?

The forward-biased SOA for FJP3307DH2TU is defined up to 100 V and 10 A for 1 ms pulses at T_C = 25°C (Figure 9). This supports reliable operation in hard-switched flyback and forward converters with properly sized snubbers and gate drive.

FJP3307DH2TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 26 @ 2A, 5V

Power - Max:: 80 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP3307DH2TU FAQ

1.How can I place an order for FJP3307DH2TU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP3307DH2TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP3307DH2TU reliable?

The price and inventory of FJP3307DH2TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP3307DH2TU is usually 5 days.

3.What payment methods are accepted for FJP3307DH2TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP3307DH2TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP3307DH2TU?

FJP3307DH2TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP3307DH2TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP3307DH2TU?

For technical support, including FJP3307DH2TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP3307DH2TU requirements.

6.How does Aetrix verify that FJP3307DH2TU is sourced from the original manufacturer or authorized distributors?

All FJP3307DH2TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP3307DH2TU meets industry standards.

7.What is the process for return or replacement of FJP3307DH2TU?

All FJP3307DH2TU units undergo pre-shipment inspection (PSI). If there is an issue with FJP3307DH2TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP3307DH2TU part is unused and in its original packaging.

Return procedure for FJP3307DH2TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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