onsemi FJP5021RV

Overview

FJP5021RV from Fairchild Semiconductor is an NPN silicon power transistor designed for high-voltage switching applications, featuring 500 V V_CEO, 5 A continuous collector current, and 50 W power dissipation at T_C = 25°C. It operates reliably up to 150°C junction temperature and delivers fast switching with t_F = 0.1 µs (typ.) in motor control and SMPS circuits.

For engineers reviewing the FJP5021RV datasheet, pinout, applications, or equivalent options, key selection criteria include its 800 V V_CBO, wide forward-bias SOA, TO-220 package thermal performance, and h_FE classification (R-grade: 15–30 at I_C = 0.6 A), critical for robust high-voltage amplifier and snubberless triac driver designs.

Technical Context

This device is a single NPN bipolar junction transistor optimized for high-voltage, medium-current switching where ruggedness and safe operating area (SOA) are prioritized over RF or linear amplification. Its clamped V_CEX(sus) = 500 V under L = 1 mH inductive load confirms suitability for inductive switching without external snubbers.

The FJP5021RV exhibits low saturation voltages-V_CE(sat) = 1 V and V_BE(sat) = 1.5 V at I_C = 3 A / I_B = 0.6 A-and supports pulse currents up to 10 A, enabling efficient operation in repetitive hard-switching topologies such as flyback and half-bridge converters.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Dimensions conform to JEDEC TO-220AC standard; mounting hole ø3.60 mm; tab electrically connected to collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Compared with MJD127 and BU508A, the FJP5021RV uniquely balances 500 V blocking, 5 A current, fast 0.1 µs fall time, and R-grade gain consistency-making it optimal for cost-sensitive, high-reliability 400 V-class SMPS and motor drives requiring proven SOA margin.

Availability

FJP5021RV is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, and high-voltage amplifier circuits requiring stable component supply and long-term manufacturability.

Supply support for FJP5021RV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The FJP5021RV belongs to Fairchild's high-voltage bipolar transistor family, engineered for rugged switching in industrial power conversion where SOA integrity and voltage margin are critical.

FAQ

What is the maximum allowable collector-emitter voltage for FJP5021RV?

The FJP5021RV has a guaranteed BV_CEO of 500 V at I_C = 5 mA and I_B = 0. This is the absolute maximum DC collector-emitter voltage before breakdown occurs. Designers must apply appropriate safety margins-typically ≤80% of this rating-in real-world circuits subject to transients or ringing. The FJP5021RV also supports V_CEX(sus) = 500 V under clamped inductive switching, confirming its suitability for snubberless triac driver applications.

Is FJP5021RV pin-compatible with other TO-220 NPN transistors like MJE13009?

No, FJP5021RV is not pin-compatible with MJE13009. While both use TO-220 packages, their pinouts differ: FJP5021RV uses Base–Collector–Emitter (1–2–3), whereas MJE13009 uses Emitter–Base–Collector (1–2–3). Swapping them without PCB revision risks incorrect biasing and immediate failure. Always verify pinout diagrams from official datasheets before substitution; the FJP5021RV pinout is explicitly defined as Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter.

What thermal derating applies to FJP5021RV above 25°C case temperature?

FJP5021RV's collector power dissipation decreases linearly above T_C = 25°C, with a thermal derating factor of 0.4 W/°C as shown in Figure 8 of its datasheet. At T_C = 100°C, maximum allowable P_C drops to 20 W. Effective heatsinking is essential-its R_θJC is approximately 0.5°C/W. For sustained 5 A operation, maintain T_C ≤ 75°C using a properly sized aluminum heatsink with thermal interface material. The FJP5021RV junction temperature must never exceed 150°C.

Does FJP5021RV have built-in protection features such as thermal shutdown or overcurrent limiting?

No, the FJP5021RV is a discrete bipolar transistor with no integrated protection circuitry. It lacks thermal shutdown, overcurrent limiting, or short-circuit protection. System-level safeguards-including base current limiting, collector current sensing, external thermal cutoffs, and SOA-aware gate drive design-must be implemented externally. Its wide forward-bias SOA and 150°C maximum junction temperature provide inherent ruggedness, but the FJP5021RV relies entirely on external circuit design for reliability under fault conditions.

Can FJP5021RV be used in linear amplifier configurations?

Yes, the FJP5021RV can operate in linear mode, supported by its f_T = 18 MHz and well-characterized h_FE vs. I_C curves. However, linear use demands strict attention to SOA limits-especially at high V_CE-and thermal management, since P_D = V_CE × I_C can rapidly exceed 50 W. Its R-grade h_FE binning (15–30) aids predictable biasing. For precision linear amplification, consider dedicated RF or audio transistors; the FJP5021RV is best applied where high-voltage linearity intersects with switching robustness, such as HV sensor front-ends.