onsemi FJP5021RVTU

Overview

FJP5021RVTU from Fairchild Semiconductor is an NPN silicon power transistor in TO-220 package, rated for 500 V V_CEO, 5 A continuous collector current, and 50 W power dissipation at T_C = 25°C. It delivers high-speed switching (t_F = 0.1 µs typ.), wide forward-bias safe operating area (SOA), and high-voltage sustaining capability (V_CEX(sus) = 500 V) for industrial snubberless AC switch control.

For engineers reviewing the FJP5021RVTU datasheet, pinout, applications, or equivalent options, key selection criteria include its 500 V blocking rating, 3 A/0.6 A drive requirement for V_CE(sat) ≤ 1 V, h_FE classification R (15–30), and TO-220 mechanical compatibility with heatsink mounting.

Technical Context

This device operates as a high-voltage, medium-current linear or switching amplifier with base-controlled conduction. Its design supports robust operation under inductive load switching, evidenced by clamped V_CEX(sus) = 500 V at I_C = 2.5 A and symmetrical ±1 A base drive, and reverse-bias SOA up to 1000 V•A at 10 µs pulse width.

It features f_T = 18 MHz at V_CE = 10 V and I_C = 0.6 A, Cob = 80 pF at V_CB = 10 V, and thermal resistance R_θJC ≈ 1.5°C/W (derived from P_C = 50 W at T_J = 150°C and T_C = 25°C), enabling stable gain and switching performance in hard-switched converters.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab). Mounting hole ø3.60 mm; case temperature measured at tab center.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Compared with MJD5021G and BU508A, the FJP5021RVTU offers optimal balance of 500 V rating, 0.1 µs fall time, and TO-220 mechanical compatibility - making it preferred for cost-sensitive, through-hole industrial controls requiring proven thermal derating and snubberless operation.

Availability

FJP5021RVTU is available at Aetrix Electronics and suitable for AC motor control, industrial power supplies, inductive load drivers, and high-voltage amplifiers requiring stable component supply across extended production cycles.

Supply support for FJP5021RVTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based designer of analog and discrete semiconductors, acquired by ON Semiconductor in 2016; legacy products maintain full datasheet compliance and industrial qualification.

The FJP5021RVTU belongs to Fairchild's high-voltage bipolar transistor family, engineered for reliability-critical switching in mains-connected equipment including motor drives and offline power conversion.

FAQ

What is the maximum continuous collector current rating for FJP5021RVTU?

The FJP5021RVTU has a maximum continuous collector current (I_C) rating of 5 A at case temperature T_C = 25°C. Derating is required above 25°C per the power derating curve in the datasheet, reaching zero dissipation at T_C = 175°C. At T_C = 100°C, usable I_C drops to approximately 3.2 A based on P_C = 50 W and R_θJC ≈ 1.5°C/W.

Does FJP5021RVTU have an insulated tab in its TO-220 package?

Yes, the FJP5021RVTU uses a TO-220 package with an electrically insulated metal tab. The collector is internally connected to the tab, so electrical isolation (e.g., mica washer or silicone pad) must be used when mounting to a heatsink to prevent short circuits. This insulation is confirmed by Fairchild's package drawings and thermal test conditions specifying tab-to-case isolation.

What is the h_FE classification for FJP5021RVTU and how does it affect base drive design?

The "R" suffix in FJP5021RVTU denotes h_FE1 = 15–30 at V_CE = 5 V and I_C = 0.6 A. For reliable saturation at 3 A collector current, base drive must deliver ≥0.6 A (minimum 10× worst-case h_FE = 15), confirming the need for a robust driver stage. The FJP5021RVTU's h_FE2 = 8 at I_C = 3 A further validates this requirement.

Can FJP5021RVTU be used in avalanche mode?

No - the FJP5021RVTU is not rated or characterized for repetitive avalanche operation. Its absolute maximum rating for V_CEX(sus) = 500 V applies only under clamped inductive switching with specified base drive (±1 A) and L = 1 mH. Unclamped inductive turn-off may exceed junction limits. For avalanche-rated alternatives, consider devices explicitly specified with E_AS energy ratings.

What is the typical Cob (output capacitance) value for FJP5021RVTU and why does it matter?

The FJP5021RVTU has a typical Cob of 80 pF at V_CB = 10 V and f = 1 MHz. This capacitance directly impacts switching speed and gate drive requirements in base-driven configurations - higher Cob increases Miller effect, delaying turn-on and increasing dynamic losses. In hard-switched applications above 50 kHz, this value necessitates careful driver impedance matching to minimize ringing.