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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJP5027RTU

Name: FJP5027RTU
Brand: onsemi
SKU: FJP5027RTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJP5027RTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: FJP5027RTU.pdf

Description:: TRANS NPN 800V 3A TO-220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJP5027RTU from ON Semiconductor is a high-voltage NPN silicon power transistor in TO-220 package, rated for 800 V V_CEO, 3 A DC collector current, and 50 W power dissipation at T_C = 25°C. It delivers fast switching (t_ON = 0.5 µs, t_F = 0.3 µs) with wide SOA and is used in flyback converters, motor control snubbers, and industrial AC line-switching circuits.

For engineers reviewing the FJP5027RTU datasheet, pinout, applications, or equivalent options, key selection criteria include its 800 V sustaining voltage under clamped inductive load, 15 MHz f_T, h_FE range of 10–40 at I_C = 0.2–1 A, and validated operation up to 150°C junction temperature.

Technical Context

The FJP5027RTU employs a planar epitaxial base structure optimized for high-voltage blocking and rugged switching performance. Its wide Safe Operating Area (SOA) supports unclamped inductive switching at elevated temperatures, and the device features low output capacitance (C_ob = 60 pF) and high current gain bandwidth product (f_T = 15 MHz) for stable high-speed operation.

Designed for hard-switched topologies, it sustains 800 V in clamped inductive mode (V_CEX(sus)) with I_C = 1.5 A and complementary base drive (I_B1 = –I_B2 = 0.3 A), while maintaining V_CE(sat) ≤ 2 V and V_BE(sat) ≤ 1.5 V at I_C = 1.5 A / I_B = 0.3 A - enabling efficient gate drive design in high-side switch configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	800 V - supports primary-side switching in offline SMPS up to 400 V AC mains with margin
I_C (DC)	3 A - enables continuous conduction mode operation in <100 W flyback or forward converters
P_C @ T_C=25°C	50 W - requires heatsink for >10 W continuous dissipation above ambient
f_T	15 MHz - ensures stable small-signal amplification and predictable turn-off behavior
t_ON/t_F	0.5 µs / 0.3 µs - allows PWM operation up to ~500 kHz with minimal dead-time overhead
C_ob	60 pF @ V_CB=10 V - reduces capacitive coupling and EMI in high-dv/dt environments
T_J max	150°C - permits use in sealed enclosures or high-ambient industrial settings

Pinout & Package

Package: TO-220 (JEDEC variation AB, 3-lead, through-hole, isolated tab). Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives forward base current to saturate; requires ≥0.3 A drive for full 1.5 A switching
2 (Collector)	High-voltage power output	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential
3 (Emitter)	Power return path	Serves as common reference for base drive; low-inductance layout critical for switching stability

Key Features

Feature	Design Value
High-voltage sustaining capability	V_CEX(sus) = 800 V under clamped inductive load - enables robust overvoltage protection without external snubbers
Wide Safe Operating Area (SOA)	Rated for DC, pulsed, and inductive loads per Figure 6 - supports reliable operation in poorly damped or variable-load systems
Fast switching with low storage time	t_STG = 3 µs - minimizes tail current and improves efficiency in high-frequency hard-switched designs
High-temperature operation	Specified performance up to T_J = 150°C - eliminates derating concerns in thermally constrained industrial modules

Applications

Switch-Mode Power Supply (SMPS)	AC Motor Control Snubber
Use Scenario: Primary-side switching in universal-input 60–100 W offline flyback converters. IC Role / Device Role / Timing Role: Main power switch handling 400 V DC bus with PWM-controlled on/off cycling. Use Value: 800 V V_CEO and wide SOA prevent avalanche failure during line surges or transformer leakage spikes.	Use Scenario: RC-snubber transistor in 3-phase inverter leg for 230 V AC induction motor drives. IC Role / Device Role / Timing Role: Clamped energy diversion path during IGBT turn-off to limit dv/dt stress. Use Value: 800 V V_CEX(sus) and 10 µA I_CBO ensure reliable clamping without thermal runaway at 85°C ambient.
Industrial AC Line Switching	High-Voltage Relay Replacement
Use Scenario: Solid-state replacement for electromechanical relays controlling 240 V AC resistive heating elements. IC Role / Device Role / Timing Role: Zero-crossing–triggered power switch with optocoupler-isolated base drive. Use Value: 3 A I_C rating and 150°C T_J support continuous 2 kW load switching in panel-mounted controllers.	Use Scenario: High-reliability DC contactor substitute in battery management system precharge circuits. IC Role / Device Role / Timing Role: Controlled inrush limiter between high-voltage battery pack and main DC bus. Use Value: Low V_CE(sat) (≤2 V) and fast t_F (0.3 µs) minimize precharge time and power loss during 400 V transitions.

Switch-Mode Power Supply (SMPS)

AC Motor Control Snubber

Use Scenario: Primary-side switching in universal-input 60–100 W offline flyback converters.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC bus with PWM-controlled on/off cycling.

Use Value: 800 V V_CEO and wide SOA prevent avalanche failure during line surges or transformer leakage spikes.

Use Scenario: RC-snubber transistor in 3-phase inverter leg for 230 V AC induction motor drives.

IC Role / Device Role / Timing Role: Clamped energy diversion path during IGBT turn-off to limit dv/dt stress.

Use Value: 800 V V_CEX(sus) and 10 µA I_CBO ensure reliable clamping without thermal runaway at 85°C ambient.

Industrial AC Line Switching

High-Voltage Relay Replacement

Use Scenario: Solid-state replacement for electromechanical relays controlling 240 V AC resistive heating elements.

IC Role / Device Role / Timing Role: Zero-crossing–triggered power switch with optocoupler-isolated base drive.

Use Value: 3 A I_C rating and 150°C T_J support continuous 2 kW load switching in panel-mounted controllers.

Use Scenario: High-reliability DC contactor substitute in battery management system precharge circuits.

IC Role / Device Role / Timing Role: Controlled inrush limiter between high-voltage battery pack and main DC bus.

Use Value: Low V_CE(sat) (≤2 V) and fast t_F (0.3 µs) minimize precharge time and power loss during 400 V transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STN1010	V_CEO = 1000 V, I_C = 2 A, P_C = 40 W, TO-220	Higher voltage margin but lower current and power rating	Select when >900 V blocking is required and peak current stays below 2 A
MJD122	V_CEO = 100 V, I_C = 8 A, P_C = 50 W, TO-220	Lower voltage, higher current - not suitable for AC line applications	Choose only for low-voltage (<150 V) high-current DC switching where speed and SOA are secondary

Compared with STN1010 and MJD122, the FJP5027RTU uniquely balances 800 V blocking, 3 A current, and 50 W dissipation in a single TO-220 package - making it optimal for universal-input SMPS and industrial AC switching where both voltage headroom and thermal capacity are constrained.

Availability

FJP5027RTU is available at Aetrix Electronics and suitable for switch-mode power supplies, AC motor control snubbers, and industrial AC line switching requiring stable component supply across multi-year production cycles.

Supply support for FJP5027RTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The FJP5027RTU belongs to ON Semiconductor's legacy high-voltage bipolar transistor portfolio, originally developed by Fairchild for rugged industrial switching applications demanding reliability under repetitive overvoltage and thermal stress.

FAQ

What is the maximum safe operating voltage for FJP5027RTU in continuous DC mode?

The FJP5027RTU has a V_CEO rating of 800 V, meaning it can safely block up to 800 V between collector and emitter with base open. In practical DC applications, derating to 70–80% (560–640 V) is recommended for long-term reliability. The FJP5027RTU datasheet confirms this rating applies at T_C = 25°C and must be reduced linearly above 25°C case temperature per the power derating curve.

Does FJP5027RTU support base-emitter reverse bias operation?

Yes - the FJP5027RTU specifies V_EBO = 7 V, allowing up to 7 V reverse bias across emitter-base. This enables active pull-down or complementary drive schemes. However, sustained reverse base current exceeding 10 mA may degrade h_FE; the FJP5027RTU should not be operated with continuous reverse base voltage beyond its absolute maximum rating.

Can FJP5027RTU replace FJP5027 in existing designs?

Yes - FJP5027RTU is a direct revision of FJP5027, retaining identical electrical specifications, pinout, and TO-220 package. The "RTU" suffix denotes tape-and-reel packaging and updated ON Semiconductor branding post-Fairchild integration; no circuit or layout changes are needed when substituting FJP5027RTU for FJP5027.

What is the typical h_FE range of FJP5027RTU at 1 A collector current?

Per the FJP5027RTU datasheet, h_FE2 is specified as min 8, typ 20, max 40 at V_CE = 5 V and I_C = 1 A. The actual h_FE varies by unit and temperature - e.g., dropping ~25% at T_J = 125°C. Designers using FJP5027RTU should verify base drive sufficiency across the full operating temperature range.

Is FJP5027RTU suitable for use in Class I medical equipment?

No - ON Semiconductor explicitly states that the FJP5027RTU is not designed, intended, or authorized for use in life support systems or FDA Class 3 medical devices. Its qualification excludes implantable or critical-care applications. For such uses, designers must select components certified to ISO 13485 and IEC 60601-1; the FJP5027RTU does not meet those requirements.

FJP5027RTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 800 V

Vce Saturation (Max) @ Ib, Ic:: 2V @ 300mA, 1.5A

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 15 @ 200mA, 5V

Power - Max:: 50 W

Frequency - Transition:: 15MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

FJP5027RTU FAQ

1.How can I place an order for FJP5027RTU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJP5027RTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJP5027RTU reliable?

The price and inventory of FJP5027RTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP5027RTU is usually 5 days.

3.What payment methods are accepted for FJP5027RTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP5027RTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJP5027RTU?

FJP5027RTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJP5027RTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJP5027RTU?

For technical support, including FJP5027RTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP5027RTU requirements.

6.How does Aetrix verify that FJP5027RTU is sourced from the original manufacturer or authorized distributors?

All FJP5027RTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP5027RTU meets industry standards.

7.What is the process for return or replacement of FJP5027RTU?

All FJP5027RTU units undergo pre-shipment inspection (PSI). If there is an issue with FJP5027RTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJP5027RTU part is unused and in its original packaging.

Return procedure for FJP5027RTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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