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onsemi FJP5304D
- Part No.:
- FJP5304D
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
FJP5304D.pdf
- Description:
- TRANS NPN 400V 4A TO-220-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,945
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Product details
Overview
FJP5304D from ON Semiconductor is a high-voltage NPN silicon power transistor in TO-220 package, rated for 700 V VCBO, 400 V VCEO, and 4 A DC collector current. It integrates a built-in freewheeling diode, features low storage time (0.6 μs under inductive load), and supports high-speed switching in electronic ballast and AC-DC power conversion circuits.
For engineers reviewing the FJP5304D datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area robustness, VCE(sat) performance at 2.5 A, thermal resistance (RθJC = 1.78 °C/W), and compatibility with 200 V inductive switching topologies.
Technical Context
The FJP5304D is optimized for high-voltage, medium-current switching in resonant and hard-switched topologies. Its wide SOA enables reliable operation at 200 V with 2 A inductive loads, while the integrated diode eliminates external flyback path requirements in half-bridge and chopper configurations.
It delivers fast turn-off characteristics (tstg = 0.6 μs, tf = 0.1 μs) under VBE(off) = −5 V bias and exhibits stable hFE (10–40) across IC = 10 mA to 2 A at VCE = 5 V - supporting consistent base drive design across load ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 700 V - supports primary-side switching in offline SMPS up to 600 V DC bus with margin |
| VCEO | 400 V - enables use in 380 V PFC output or 230 VAC rectified rail applications |
| IC (DC) | 4 A - sustains continuous conduction in 100–200 W electronic ballast and lighting drivers |
| VCE(sat) @ 2.5 A | 1.5 V - limits conduction loss to ≤3.75 W at full load, easing heatsink requirements |
| RθJC | 1.78 °C/W - allows 70 W dissipation with ≤125 °C junction rise above 25 °C case temperature |
| tstg (inductive) | 0.6 μs - enables >1 MHz switching in resonant control schemes with controlled tail current |
| Vf (diode) | 2.5 V @ 2 A - defines forward loss of internal freewheeling path; no external diode needed |
Pinout & Package
Package: TO-220 (JEDEC variation AB, 3-lead, through-hole). Case acts as collector terminal; tab is electrically connected to collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input | Receives base current (IB ≤ 2 A DC) to saturate transistor; requires current-limiting resistor in linear drive |
| 2 (Collector) | Main power output / heat sink interface | Connected to high-voltage rail; tab must be isolated from chassis unless circuit ground reference permits |
| 3 (Emitter) | Power return / reference node | Serves as low-side switch return; carries full load current; common reference for base drive and sensing |
Key Features
| Feature | Design Value |
|---|---|
| Built-in freewheeling diode | Eliminates discrete diode placement and layout parasitics in inductive load commutation paths |
| Wide Forward Bias SOA | Supports 2 A at 200 V with 10 μs pulse width - suitable for peak-current-limited ballast startup |
| Small variance in storage time | Ensures predictable turn-off timing across temperature (−65 °C to 150 °C) and current range |
| Low VCE(sat) at high current | 1.5 V at IC = 2.5 A / IB = 0.5 A reduces conduction losses and thermal stress in sustained on-state |
| TO-220 mechanical standardization | Enables drop-in replacement in legacy designs using JEDEC TO-220 footprint and mounting hardware |
Applications
| Electronic Ballast Control | AC-DC Power Supply Switch |
|---|---|
Use Scenario: Driving resonant LC tank in 20–60 W fluorescent lamp ballasts with frequency sweep startup. IC Role / Device Role / Timing Role: High-voltage NPN switch controlling inverter bridge leg; operates in quasi-resonant mode with zero-voltage switching assist. Use Value: Integrated diode handles reverse recovery current during dead-time; low tstg ensures precise frequency control during dimming transitions. | Use Scenario: Primary-side switch in 100–150 W offline flyback or forward converter for industrial power supplies. IC Role / Device Role / Timing Role: Main energy transfer switch handling rectified 375 V DC bus; driven by UC384x or similar PWM controller. Use Value: 400 V VCEO rating provides margin over 375 V nominal bus; 70 W PC rating supports derated operation without forced cooling. |
| Inductive Heater Driver | Motor Chopper Control |
Use Scenario: Half-bridge switch in 50–100 kHz induction heating coil driver for small-appliance heating elements. IC Role / Device Role / Timing Role: Low-side switching element in asymmetrical half-bridge; commutated with active freewheeling via internal diode. Use Value: 0.6 μs storage time minimizes tail current loss during high-frequency switching; 700 V VCBO withstands voltage spikes from coil leakage inductance. | Use Scenario: PWM-controlled chopper for brushed DC motor speed regulation in HVAC blower systems (24–48 V bus). IC Role / Device Role / Timing Role: Medium-power switching transistor in single-ended topology; handles 4 A stall current with short-duration overload tolerance. Use Value: 4 A IC rating and 8 A ICP pulse capability support motor startup surges; TO-220 package allows direct heatsink mounting on metal chassis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | Lower VCBO (100 V), higher hFE (25–120), TO-252 surface-mount package | Not suitable for >120 V applications; limited to low-voltage DC-DC and automotive body control | Select only for <100 V, space-constrained PCBs where thermal mass is managed externally |
| BU508AF | Higher VCEO (1500 V), same TO-220 package, no integrated diode, slower switching (tstg ≈ 2.5 μs) | Used in CRT flyback and high-voltage capacitor charging; lacks freewheeling diode, requiring external clamp | Choose when ultra-high voltage hold-off is required and diode can be added externally; avoid if fast inductive turn-off is critical |
Compared with MJD127G and BU508AF, the FJP5304D uniquely balances 400 V blocking, integrated diode functionality, and sub-microsecond storage time - making it optimal for electronic ballast and medium-voltage SMPS where layout simplicity and switching speed are jointly prioritized.
Availability
FJP5304D is available at Aetrix Electronics and suitable for electronic ballast control, AC-DC power supply switching, and inductive heater driver applications requiring stable component supply and long-term industrial availability.
Supply support for FJP5304D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.
The FJP5304D belongs to ON Semiconductor's legacy Fairchild power bipolar transistor portfolio, engineered specifically for high-reliability, high-voltage switching in lighting and power conversion systems where rugged SOA and integrated protection are essential.
FAQ
What is the maximum collector-emitter voltage rating for the FJP5304D?
The FJP5304D has a maximum collector-emitter voltage (VCEO) rating of 400 V at TC = 25°C. This rating applies under DC conditions with IB = 0, and is validated per JEDEC test conditions (IC = 5 mA). Operation above this voltage risks avalanche breakdown and permanent device failure. Designers should maintain ≥20% margin for transient spikes in real-world AC-DC or ballast applications.
Does the FJP5304D include an integrated freewheeling diode?
Yes, the FJP5304D includes a built-in freewheeling diode as confirmed in its absolute maximum ratings and typical characteristics section. The diode forward voltage (Vf) is specified at 2.5 V @ IF = 2 A, and it is electrically connected between collector and emitter. This eliminates the need for an external diode in inductive load switching circuits such as electronic ballasts and chopper drives.
What is the thermal resistance from junction to case for the FJP5304D?
The FJP5304D has a thermal resistance from junction to case (RθJC) of 1.78 °C/W, measured under standard TO-220 mounting conditions. This value enables calculation of junction temperature rise: TJ = TC + (PC × 1.78). For example, at 70 W dissipation and 25 °C case temperature, TJ reaches 149.5 °C - within the 150 °C maximum storage limit but requiring careful heatsink design.
Can the FJP5304D be used in place of the BU508A in electronic ballast designs?
The FJP5304D is not a direct replacement for the BU508A due to key differences: BU508A offers 1500 V VCEO but no integrated diode and slower switching (tstg ≈ 2.5 μs), whereas FJP5304D provides 400 V VCEO, built-in diode, and 0.6 μs storage time. In ballast designs relying on fast turn-off and self-commutation, FJP5304D improves efficiency but requires verifying voltage margin - it is not suitable for 1000+ V flyback applications where BU508A is typically used.
What is the DC current gain (hFE) range for the FJP5304D at 2 A collector current?
At VCE = 5 V and IC = 2 A, the FJP5304D exhibits a DC current gain (hFE) range of 8 to 40, as specified in its electrical characteristics table. This wide spread reflects process variation and necessitates base drive design that accommodates minimum hFE (8) to ensure saturation under worst-case conditions - for example, requiring ≥250 mA IB to guarantee 2 A IC with margin.
FJP5304D Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 500mA, 2.5A
- Current - Collector Cutoff (Max):
- 250mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 8 @ 2A, 5V
- Power - Max:
- 70 W
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
FJP5304D FAQ
1.How can I place an order for FJP5304D through Aetrix?
Please submit a Request for Quotation (RFQ) for FJP5304D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJP5304D reliable?
The price and inventory of FJP5304D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP5304D is usually 5 days.
3.What payment methods are accepted for FJP5304D?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP5304D transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJP5304D?
FJP5304D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJP5304D order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJP5304D?
For technical support, including FJP5304D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP5304D requirements.
6.How does Aetrix verify that FJP5304D is sourced from the original manufacturer or authorized distributors?
All FJP5304D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP5304D meets industry standards.
7.What is the process for return or replacement of FJP5304D?
All FJP5304D units undergo pre-shipment inspection (PSI). If there is an issue with FJP5304D, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJP5304D part is unused and in its original packaging.
Return procedure for FJP5304D:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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