onsemi FJP5304DTU

Overview

FJP5304DTU from ON Semiconductor is an NPN silicon power transistor in TO-220 package, rated for 400 V V_CEO, 4 A continuous collector current, and 70 W power dissipation at T_C = 25°C. It integrates a built-in freewheeling diode and is optimized for high-voltage, high-speed switching in electronic ballast circuits.

For engineers reviewing the FJP5304DTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) robustness under inductive loads, storage time consistency (<2.9 µs at 2 A), and V_CE(sat) ≤ 1.5 V at I_C = 2.5 A with I_B = 0.5 A.

Technical Context

The FJP5304DTU is a single NPN bipolar junction transistor designed for hard-switched, medium-power applications where voltage blocking up to 400 V and fast turn-off are required. Its internal freewheeling diode enables self-contained flyback energy handling in inductive load circuits without external diode placement.

It operates with DC current gain (h_FE) of 8–40 at I_C = 2 A and V_CE = 5 V, and exhibits low saturation voltages-V_CE(sat) = 1.0 V at I_C = 1 A / I_B = 0.2 A-and fast switching: t_stg = 2.9 µs and t_f = 0.2 µs under resistive load conditions (V_CC = 250 V).

Key Specifications

Pinout & Package

Package: TO-220 (JEDEC TO-220AB variation AB, 3-lead, through-hole, isolated tab). Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with STF5304 and MJD5304G, the FJP5304DTU uniquely combines integrated diode functionality, TO-220 mechanical robustness, and tighter storage time consistency-making it optimal for cost-sensitive, through-hole electronic ballast production where reliability under repeated inductive stress is critical.

Availability

FJP5304DTU is available at Aetrix Electronics and suitable for compact fluorescent lamp (CFL) ballasts, electronic HID lamp ballasts, and DC-DC flyback converters requiring stable component supply, long-term manufacturability, and JEDEC-standard TO-220 compatibility.

Supply support for FJP5304DTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and consumer electronics.

The FJP5304DTU belongs to ON Semiconductor's legacy Fairchild power transistor portfolio, engineered specifically for high-reliability, high-voltage switching in lighting and power conversion systems where ruggedness and predictable switching behavior are essential.

FAQ

What is the maximum continuous collector current rating for the FJP5304DTU?

The FJP5304DTU has a maximum continuous collector current (I_C) rating of 4 A at T_C = 25°C. This rating decreases with increasing case temperature per the power derating curve-down to zero at T_C ≈ 175°C. For reliable operation at elevated temperatures, heatsink design must maintain T_C within specification limits. The FJP5304DTU datasheet specifies I_C = 4 A as the absolute DC limit under ideal thermal conditions.

Does the FJP5304DTU include an integrated freewheeling diode?

Yes, the FJP5304DTU integrates a freewheeling diode connected anti-parallel across its collector and emitter terminals. Its forward voltage drop (V_f) is specified as 2.5 V at I_F = 2 A. This diode eliminates the need for an external flyback diode in many inductive switching applications, such as electronic ballasts and flyback converters. The FJP5304DTU's internal diode is not separately rated for reverse recovery time but is optimized for energy recirculation rather than high-frequency commutation.

What is the safe operating area (SOA) performance of the FJP5304DTU?

The FJP5304DTU features a wide forward-bias SOA, supporting DC operation up to 400 V × 4 A at T_C = 25°C with appropriate derating. Its SOA curve accounts for second breakdown limitations and is validated for both resistive and inductive loads. The FJP5304DTU's SOA robustness is especially valuable in electronic ballast applications where transient overloads occur during lamp ignition. Refer to Figure 1 in the FJP5304DTU datasheet for the full SOA boundary plot.

Can the FJP5304DTU be used as a direct replacement for the FJP5304D?

Yes, the FJP5304DTU is the updated ON Semiconductor designation for the original Fairchild FJP5304D, resulting from the Fairchild integration. The "TU" suffix reflects ON Semiconductor's standardized nomenclature (replacing underscore with dash), and the electrical, thermal, and mechanical specifications-including TO-220 package, pinout, and all key parameters-are identical. The FJP5304DTU is fully compatible with existing FJP5304D designs, requiring no circuit or layout changes.

What is the thermal resistance from junction to case (R_θJC) for the FJP5304DTU?

The FJP5304DTU has a junction-to-case thermal resistance (R_θJC) of 1.78 °C/W, measured under standard JEDEC test conditions. This value assumes proper mounting to a heatsink with recommended torque and thermal interface material. Because the collector is internally connected to the metal tab, effective heat transfer depends on low-thermal-resistance contact between the tab and heatsink. The FJP5304DTU's R_θJC enables efficient thermal management in high-power lighting applications when mounted correctly.