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onsemi FJP5555TU
- Part No.:
- FJP5555TU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
FJP5555TU.pdf
- Description:
- TRANS NPN 400V 5A TO-220-3
- Quantity:
- Payment:
- Shipping:
Inventory:1,087
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Product details
Overview
FJP5555TU from Fairchild Semiconductor is an NPN silicon power transistor in TO-220 package, rated for 400 V collector-emitter voltage, 5 A DC collector current, and 75 W case-power dissipation. It delivers fast switching (tON = 2.0 μs at 250 V), low saturation voltage (VCE(sat) = 1.5 V at IC = 3.5 A/IB = 1.0 A), and wide safe operating area - optimized for high-voltage, medium-current switching in electronic ballasts and switch-mode power supplies.
For engineers reviewing the FJP5555TU datasheet, pinout, applications, or equivalent options, key selection criteria include avalanche energy rating (6 mJ), thermal resistance (Rθjc = 1.66 °C/W), junction temperature limit (150 °C), and TO-220 mechanical compatibility with heatsink mounting in industrial power conversion designs.
Technical Context
The FJP5555TU operates as a high-voltage, medium-power NPN bipolar junction transistor with rugged avalanche capability and fast turn-on/turn-off characteristics. Its design supports resistive and inductive load switching under high VCE stress, with specified storage time (tSTG = 2.5 μs) and fall time (tF = 0.3 μs) at 250 V, 2.5 A conditions.
It features a wide forward-biased safe operating area (FBSOA) up to 1000 V and 10 A (single-pulse), validated per JEDEC TO-220 variation AB. The device uses epitaxial base construction and is characterized for operation across –55 °C to +150 °C junction temperature range, with DC current gain (hFE) ranging from 20 to 40 at VCE = 3 V, IC = 0.8 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVCEO | 400 V - Enables use in 380 VAC input SMPS primary-side switching without derating |
| IC (DC) | 5 A - Supports continuous output currents up to 5 A in ballast driver stages |
| PD @ TC = 25°C | 75 W - Allows high-power dissipation when mounted on heatsink with adequate thermal interface |
| VCE(sat) | 1.5 V @ IC = 3.5 A/IB = 1.0 A - Limits conduction loss to ≤5.25 W at rated current |
| tON / tF | 2.0 μs / 0.3 μs - Enables efficient 50–100 kHz switching in resonant lamp drivers |
| EAS | 6 mJ - Provides single-pulse avalanche robustness during inductive turn-off transients |
| Rθjc | 1.66 °C/W - Permits <10 °C junction-to-case rise at 6 A pulse, critical for thermal reliability |
Pinout & Package
Package: TO-220 (JEDEC variation AB), through-hole, single-ended heatsink-mountable with tab connected to collector. Dimensions conform to drawing TO220B03REV9; tab is electrically active and thermally conductive.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base drive current (IB ≤ 2 A DC) to saturate or cut off the transistor |
| 2 (Collector) | High-voltage power input | Connected to drain of upstream switch or AC line; electrically tied to metal tab |
| 3 (Emitter) | Power return path | Serves as common emitter node; isolated from tab; used for current sensing and feedback |
Key Features
| Feature | Design Value |
|---|---|
| Fast switching speed | 2.0 μs turn-on and 0.3 μs fall time at 250 V/2.5 A enables >50 kHz operation with low switching loss |
| Wide safe operating area | Validated FBSOA up to 1000 V × 10 A (single-pulse) supports inductive load commutation without second breakdown |
| High avalanche energy rating | 6 mJ single-pulse avalanche capability protects against inductive kickback in ballast and SMPS flyback circuits |
| Low thermal resistance | 1.66 °C/W junction-to-case allows direct heatsink mounting with minimal thermal interface resistance |
Applications
| Electronic Ballast Driver | Switch-Mode Power Supply |
|---|---|
Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge resonant inverter stage. Use Value: Fast tF (0.3 μs) minimizes dead-time losses; 400 V BVCEO accommodates 380 VAC rectified peaks plus ringing margin. | Use Scenario: Primary-side switching in offline 50–100 W AC/DC converters. IC Role / Device Role / Timing Role: High-voltage NPN switch in flyback or forward converter topology. Use Value: 6 mJ EAS withstands transformer leakage inductance energy; Rθjc = 1.66 °C/W ensures stable thermal performance at 75 W dissipation. |
| Inductive Load Switching | DC Motor Commutation |
Use Scenario: Solid-state relay replacement for solenoid and transformer control in industrial controls. IC Role / Device Role / Timing Role: Medium-power, high-voltage switching element driving inductive loads. Use Value: Wide SOA and 1050 V BVCBO prevent breakdown during rapid VCE transitions under reactive loads. | Use Scenario: Brushed DC motor H-bridge or half-bridge driver in HVAC blowers and appliance actuators. IC Role / Device Role / Timing Role: Low-saturation, high-current switching transistor in motor phase leg. Use Value: VCE(sat) = 1.5 V at 3.5 A limits conduction loss to 5.25 W; TO-220 tab enables direct heatsink attachment for sustained 5 A operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | Lower BVCEO (80 V), higher hFE (30–120), TO-220F package with insulated tab | Restricted to low-voltage (<100 V) DC-DC and linear regulator applications | Select only if insulation from heatsink is required and voltage stress remains below 80 V |
| BU508AF | Higher BVCEO (1500 V), same TO-220 package, slower switching (tON ≈ 4 μs) | Better suited for high-voltage CRT flyback and microwave oven inverters | Choose when >1000 V blocking is mandatory and switching frequency ≤30 kHz |
Compared with MJD127G and BU508AF, the FJP5555TU uniquely balances 400 V blocking, 5 A current handling, sub-μs switching, and 6 mJ avalanche robustness - making it optimal for 380 VAC-fed electronic ballasts and mid-power SMPS where both voltage margin and dynamic performance matter.
Availability
FJP5555TU is available at Aetrix Electronics and suitable for electronic ballasts, switch-mode power supplies, and industrial inductive load switching requiring stable component supply and long-term manufacturing continuity.
Supply support for FJP5555TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.
The FJP5555TU belongs to Fairchild's legacy high-voltage NPN transistor family, engineered for reliability in demanding lighting and power conversion applications where ruggedness, thermal stability, and switching consistency are critical.
FAQ
What is the maximum collector-emitter voltage rating for the FJP5555TU?
The FJP5555TU has a guaranteed minimum BVCEO rating of 400 V at IC = 5 mA and IB = 0. This rating allows safe operation in 380 VAC rectified circuits with typical voltage overshoot margins. The device also supports 1050 V collector-base breakdown (BVCBO), providing additional headroom during transient conditions. Always observe derating curves in the datasheet for elevated temperature operation.
Does the FJP5555TU have avalanche capability, and how is it specified?
Yes, the FJP5555TU is rated for 6 mJ single-pulse avalanche energy (EAS) with L = 2 mH. This specification confirms its ability to absorb inductive turn-off energy without failure - essential in electronic ballast and flyback SMPS designs. The rating is measured under standardized test conditions and reflects real-world ruggedness, not just theoretical capability. The FJP5555TU datasheet validates this via Figure 7 (Reverse Biased SOA).
What is the thermal resistance from junction to case for the FJP5555TU, and why does it matter?
The FJP5555TU has a typical Rθjc of 1.66 °C/W under infinite cooling conditions. This low value means that for every watt dissipated at the junction, the temperature rise above the case is only ~1.66 °C - enabling efficient heat transfer to an external heatsink. In practice, this allows the FJP5555TU to sustain 75 W of power dissipation at TC = 25°C, making it suitable for high-duty-cycle power switching applications.
How many pins does the FJP5555TU have, and what is the function of each pin?
The FJP5555TU is a 3-pin TO-220 device: Pin 1 is Base (control input), Pin 2 is Collector (high-voltage power input, electrically connected to the metal tab), and Pin 3 is Emitter (power return path). The tab must be electrically isolated from other circuit nodes unless intentionally connected to collector potential. Pinout follows JEDEC standard orientation with emitter on the right when viewing the front (marked side) of the package.
Can the FJP5555TU replace the BU2508DF in a fluorescent lamp ballast design?
The FJP5555TU is not a direct replacement for BU2508DF due to differences in switching speed and SOA. While both are TO-220 NPN transistors, the BU2508DF has faster tON (~0.8 μs) and higher hFE (40–120), whereas the FJP5555TU offers superior avalanche energy (6 mJ vs. ~3 mJ) and wider SOA. Substitution requires validation of base drive strength, thermal layout, and transient stress margins. The FJP5555TU datasheet does not claim functional equivalence with BU2508DF.
FJP5555TU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 1A, 3.5A
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 800mA, 3V
- Power - Max:
- 75 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
FJP5555TU FAQ
1.How can I place an order for FJP5555TU through Aetrix?
Please submit a Request for Quotation (RFQ) for FJP5555TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJP5555TU reliable?
The price and inventory of FJP5555TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJP5555TU is usually 5 days.
3.What payment methods are accepted for FJP5555TU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJP5555TU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJP5555TU?
FJP5555TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJP5555TU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJP5555TU?
For technical support, including FJP5555TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJP5555TU requirements.
6.How does Aetrix verify that FJP5555TU is sourced from the original manufacturer or authorized distributors?
All FJP5555TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJP5555TU meets industry standards.
7.What is the process for return or replacement of FJP5555TU?
All FJP5555TU units undergo pre-shipment inspection (PSI). If there is an issue with FJP5555TU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJP5555TU part is unused and in its original packaging.
Return procedure for FJP5555TU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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