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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJPF13007H1

Name: FJPF13007H1
Brand: onsemi
SKU: FJPF13007H1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJPF13007H1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: FJPF13007H1.pdf

Description:: TRANS NPN 400V 8A TO-220F-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,038

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Product details

Overview

FJPF13007H1 from onsemi is a high-voltage, fast-switching NPN power transistor rated for 400 V V_CEO, 8 A DC collector current, and 40 W power dissipation at T_C = 25°C; it delivers h_FE of 15–28 at I_C = 2 A, V_CE = 5 V, and supports electronic ballast and SMPS primary-side switching applications.

For engineers reviewing the FJPF13007H1 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO derating at elevated temperature, safe operating area (SOA) compliance in hard-switched topologies, saturation voltage at design-relevant I_C/I_B ratios, and TO-220 Fullpack thermal interface requirements.

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for high-voltage, medium-power switching-featuring a 700 V V_CBO, 4 MHz f_T, and 110 pF C_ob at V_CB = 10 V. Its turn-on time is 1.6 ns and fall time is 0.7 ns under specified test conditions (V_CC = 125 V, I_C = 5 A).

The FJPF13007H1 uses a TO-220 Fullpack (Case 221AT) package with isolated tab, supporting direct heatsink mounting. Its h_FE classification H1 defines a DC current gain range of 15–28 at I_C = 2 A, distinguishing it from the H2 variant (26–39).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Maximum continuous collector-emitter voltage before breakdown; sets upper limit for flyback/snubber-referred SMPS primary designs.
I_C (DC)	8 A - Rated steady-state collector current; determines minimum heatsink sizing for continuous conduction mode operation.
P_C @ T_C = 25°C	40 W - Maximum power dissipation at case temperature 25°C; requires thermal derating above 25°C per Figure 8.
h_FE (H1)	15–28 - Confirmed DC current gain range at V_CE = 5 V, I_C = 2 A; defines base drive current requirement for target collector load.
V_CE(sat)	≤3.0 V @ I_C = 8 A, I_B = 2 A - Saturation voltage under full-rated current; directly impacts conduction loss and thermal rise in switching cycles.
f_T	4 MHz - Current gain bandwidth product; indicates usable frequency limit for linear amplification or high-speed switching control loop stability.

Pinout & Package

Package: TO-220 Fullpack (Case 221AT), 3-lead, isolated tab, vertical mounting orientation with metal tab electrically connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires ≥2 A peak base current capability to achieve full 8 A collector conduction with ≤3.0 V V_CE(sat).
2	Collector	Main high-side current path; electrically tied to isolated metal tab-must be insulated from heatsink unless referenced to system ground.
3	Emitter	Reference node for base drive and load return; low-inductance layout critical to minimize switching oscillation during t_F and t_STG.

Key Features

Feature	Design Value
High voltage rating	V_CBO = 700 V enables use in 380 V AC rectified bus applications with margin for transient overvoltage.
Fast switching speed	t_ON = 1.6 ns, t_F = 0.7 ns support >50 kHz SMPS operation with reduced switching loss.
TO-220 Fullpack isolation	Electrically isolated collector tab allows direct heatsink mounting without insulating hardware in grounded-collector configurations.
H1 h_FE binning	Guaranteed 15–28 h_FE ensures predictable base drive design across production lots for consistent I_B sizing.

Applications

Compact Fluorescent Lamp (CFL) Ballast	Offline AC-DC SMPS
Use Scenario: High-frequency resonant inverter driving lamp electrodes at 20–60 kHz. IC Role / Device Role / Timing Role: Main switch in half-bridge topology, handling 400 V DC link and pulsed 5–8 A loads. Use Value: Low t_F and controlled SOA prevent second breakdown during zero-voltage switching transitions.	Use Scenario: Primary-side switch in 20–100 W flyback or forward converter with universal AC input. IC Role / Device Role / Timing Role: Power switching element turning on/off 125 V–400 V DC bus under PWM control. Use Value: 400 V V_CEO and 40 W P_C support reliable operation at 85–265 V AC input with margin for line surges.
LED Driver (High-Voltage Buck)	Induction Heater (Low-Power)
Use Scenario: Constant-current buck regulator driving series-connected LED strings from rectified AC. IC Role / Device Role / Timing Role: Sustained conduction switch modulated at 20–100 kHz to regulate average LED current. Use Value: 8 A I_C rating and 110 pF C_ob enable stable dimming control with minimal EMI generation.	Use Scenario: Resonant tank driver in 500 W–1 kW induction cooktop preheat stage. IC Role / Device Role / Timing Role: Medium-duty switching element in asymmetrical half-bridge configuration. Use Value: Forward-biased SOA curve (Figure 6) supports repetitive 5 A pulses at 25°C case temperature without thermal runaway.

Compact Fluorescent Lamp (CFL) Ballast

Offline AC-DC SMPS

Use Scenario: High-frequency resonant inverter driving lamp electrodes at 20–60 kHz.

IC Role / Device Role / Timing Role: Main switch in half-bridge topology, handling 400 V DC link and pulsed 5–8 A loads.

Use Value: Low t_F and controlled SOA prevent second breakdown during zero-voltage switching transitions.

Use Scenario: Primary-side switch in 20–100 W flyback or forward converter with universal AC input.

IC Role / Device Role / Timing Role: Power switching element turning on/off 125 V–400 V DC bus under PWM control.

Use Value: 400 V V_CEO and 40 W P_C support reliable operation at 85–265 V AC input with margin for line surges.

LED Driver (High-Voltage Buck)

Induction Heater (Low-Power)

Use Scenario: Constant-current buck regulator driving series-connected LED strings from rectified AC.

IC Role / Device Role / Timing Role: Sustained conduction switch modulated at 20–100 kHz to regulate average LED current.

Use Value: 8 A I_C rating and 110 pF C_ob enable stable dimming control with minimal EMI generation.

Use Scenario: Resonant tank driver in 500 W–1 kW induction cooktop preheat stage.

IC Role / Device Role / Timing Role: Medium-duty switching element in asymmetrical half-bridge configuration.

Use Value: Forward-biased SOA curve (Figure 6) supports repetitive 5 A pulses at 25°C case temperature without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STMicroelectronics BUL128D	V_CEO = 450 V, I_C = 10 A, h_FE = 10–25, TO-220 package	Higher voltage margin but lower h_FE consistency; requires larger base drive for same I_C.	Preferable where 450 V V_CEO is mandatory and base drive headroom is available.
Infineon BUL111	V_CEO = 350 V, I_C = 8 A, h_FE = 12–24, TO-220 package	Lower V_CEO limits use to <300 V DC bus; otherwise matches thermal and switching profile closely.	Suitable only in legacy 230 V AC-only designs with strict cost constraints and no surge margin requirement.

Compared with BUL128D and BUL111, the FJPF13007H1 offers balanced V_CEO/I_C trade-off, tighter h_FE binning, and documented SOA curves-making it preferable for new CFL ballast and universal-input SMPS designs requiring reliability across ambient temperature extremes.

Availability

FJPF13007H1 is available at Aetrix Electronics and suitable for compact fluorescent lamp ballasts, offline AC-DC SMPS, and high-voltage LED drivers requiring stable component supply and long-term industrial availability.

Supply support for FJPF13007H1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering discrete, analog, logic, and custom devices for automotive, industrial, cloud, and consumer markets.

The FJPF13007H1 belongs to onsemi's high-voltage bipolar power transistor family, engineered specifically for cost-sensitive, high-reliability lighting and power conversion systems operating up to 400 V DC.

FAQ

What is the maximum allowable case temperature for continuous operation of the FJPF13007H1?

The FJPF13007H1 has a maximum junction temperature of 150°C and a storage temperature range of −65°C to 150°C. Its power dissipation must be thermally derated linearly above 25°C case temperature per Figure 8 in the datasheet; at T_C = 100°C, maximum P_C drops to approximately 20 W. Proper heatsinking is essential to maintain T_J ≤ 150°C under full-load conditions for the FJPF13007H1.

Does the FJPF13007H1 have a built-in base-emitter resistor or protection diode?

No, the FJPF13007H1 is a standard three-terminal NPN bipolar transistor without integrated base resistors or clamp diodes. External base current limiting and emitter-follower or Baker clamp circuits must be added per application requirements. This discrete architecture gives designers full control over drive dynamics but requires careful attention to base drive design for the FJPF13007H1.

How does the hFE classification 'H1' affect circuit design for the FJPF13007H1?

The 'H1' suffix specifies a guaranteed h_FE range of 15–28 at V_CE = 5 V and I_C = 2 A. Designers must size base drive to ensure sufficient I_B even at the lower h_FE bound (15), typically using I_B ≥ I_C/10 for saturation. This binning reduces variability in switching behavior across production lots for the FJPF13007H1.

Can the FJPF13007H1 be used in avalanche mode?

No, the FJPF13007H1 is not rated or characterized for repetitive avalanche operation. Its Safe Operating Area curves (Figures 6 and 7) define forward- and reverse-biased limits under specified test conditions, but no avalanche energy (E_AS) rating is provided. For ruggedness-critical applications, external snubbers or clamping circuits are required to prevent destructive breakdown during inductive switching for the FJPF13007H1.

Is the FJPF13007H1 RoHS-compliant and lead-free?

Yes, the FJPF13007H1 is explicitly marked as a Pb−Free Device in its official datasheet (Publication Order Number FJPF13007/D, Rev. 4). It complies with RoHS Directive 2011/65/EU and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for TO-220 packages. This applies to all units shipped under the FJPF13007H1 part number.

FJPF13007H1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 15 @ 2A, 5V

Power - Max:: 40 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F-3

FJPF13007H1 FAQ

1.How can I place an order for FJPF13007H1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FJPF13007H1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJPF13007H1 reliable?

The price and inventory of FJPF13007H1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJPF13007H1 is usually 5 days.

3.What payment methods are accepted for FJPF13007H1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJPF13007H1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJPF13007H1?

FJPF13007H1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJPF13007H1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJPF13007H1?

For technical support, including FJPF13007H1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJPF13007H1 requirements.

6.How does Aetrix verify that FJPF13007H1 is sourced from the original manufacturer or authorized distributors?

All FJPF13007H1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJPF13007H1 meets industry standards.

7.What is the process for return or replacement of FJPF13007H1?

All FJPF13007H1 units undergo pre-shipment inspection (PSI). If there is an issue with FJPF13007H1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJPF13007H1 part is unused and in its original packaging.

Return procedure for FJPF13007H1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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