Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi FJPF13007H1TTU

Part No.:
FJPF13007H1TTU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3 Full Pack
Datasheet:
AetrixFJPF13007H1TTU.pdf
Description:
TRANS NPN 400V 8A TO-220F-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,158

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

FJPF13007H1TTU from onsemi is a high-voltage, fast-switching NPN power transistor in TO-220 Fullpack package, rated for 400 V VCEO, 8 A DC collector current, and 40 W power dissipation at TC = 25°C; it delivers 15–28 hFE at IC = 2 A and supports electronic ballast and SMPS primary-side switching applications.

For engineers reviewing the FJPF13007H1TTU datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO rating, switching speed (tON = 1.6 ns, tF = 0.7 ns), saturation voltage (VCE(sat) ≤ 3.0 V at 8 A), thermal derating behavior, and TO-220 Fullpack mechanical compatibility.

Technical Context

This device is a silicon bipolar junction transistor optimized for high-voltage, medium-power switching in offline AC/DC converters and fluorescent lamp ballasts. Its design emphasizes robust safe operating area (SOA) under both forward- and reverse-biased conditions, with specified turn-on time (1.6 ns), fall time (0.7 ns), and output capacitance (Cob = 110 pF at VCB = 10 V).

The FJPF13007H1TTU operates with base-driven control logic, requiring external current-limited drive to achieve specified VCE(sat) performance across its full IC range (2–8 A). It features Pb-free construction and is qualified for industrial temperature operation (TJ = −65°C to +150°C).

Key Specifications

ParameterValue and Actual Design Meaning
VCEO400 V - Maximum collector-emitter blocking voltage under open-base condition; defines primary-side MOSFET replacement ceiling in flyback/forward converters.
IC (DC)8 A - Continuous collector current capability at TC = 25°C; sets maximum average load current in linear or PWM-controlled stages.
PC40 W - Thermal power limit at case temperature 25°C; requires heatsink sizing per derating curve (Fig. 8) above 25°C.
hFE15–28 - DC current gain at VCE = 5 V, IC = 2 A; determines required base drive current for target collector conduction.
tF0.7 ns - Fall time under VCC = 125 V, IC = 5 A, IB1/IB2 = ±1 A; constrains minimum achievable switching period in high-frequency SMPS.
Cob110 pF - Output capacitance at VCB = 10 V, f = 0.1 MHz; contributes directly to switching losses and EMI generation during turn-off transitions.

Pinout & Package

Package: TO-220 Fullpack (Case 221AT), 3-lead, through-hole mounting with insulated tab. Mounting surface must be electrically isolated from heatsink unless collector is referenced to chassis ground.

Pin/TerminalCircuit RoleDesign Meaning
1BaseCurrent-controlled input terminal; requires ≥0.4 A peak drive for 2 A IC, ≥2 A for 8 A IC to ensure saturation.
2CollectorMain high-voltage power terminal; electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits.
3EmitterLow-side return path; common reference for base drive and load current; connects to PCB ground plane or current-sense resistor.

Key Features

FeatureDesign Value
High-voltage blocking400 V VCEO enables direct use in 230 VAC rectified bus applications without series stacking.
Fast switching1.6 ns turn-on and 0.7 ns fall time reduce switching losses in >50 kHz SMPS designs.
Robust SOAForward- and reverse-biased safe operating area curves (Figs. 6 & 7) support reliable operation under transient overloads.
Pb-free constructionRoHS-compliant packaging meets industrial and consumer regulatory requirements without lead-based solder concerns.

Applications

Electronic Ballast ControlSwitch-Mode Power Supply

Use Scenario: Driving resonant LC tank in compact fluorescent lamp (CFL) ballasts operating at 20–60 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling lamp ignition and steady-state current regulation.

Use Value: 400 V VCEO withstands rectified line transients; fast tF minimizes dead-time losses during zero-voltage switching transitions.

Use Scenario: Main switching element in 30–100 W offline flyback or forward converter for industrial power supplies.

IC Role / Device Role / Timing Role: High-side or low-side power switch in primary-side topology, synchronized to PWM controller.

Use Value: 8 A IC and 40 W PC support continuous conduction mode up to ~60 W; SOA compliance ensures reliability under overload faults.

AC Motor Starter CircuitsInduction Heating Drivers

Use Scenario: Phase-control switching in single-phase induction motor soft-start modules for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Line-synchronized triac replacement for zero-crossing-triggered power delivery control.

Use Value: 700 V VCBO provides margin against inductive kickback; TO-220 Fullpack mechanical stability supports repeated thermal cycling.

Use Scenario: Half-bridge switching stage in 20–50 kHz resonant inverters for domestic induction cooktops.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair driving series-resonant tank with IGBT or MOSFET high-side.

Use Value: 110 pF Cob limits capacitive feedthrough during high-dV/dt transitions; fast tON/tF improves efficiency at fixed-frequency operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD13007GTO-252 (DPAK) package; lower PC = 25 W; same VCEO = 400 V, hFE = 15–28, but higher VCE(sat) (≤3.5 V @ 8 A).Suitable only for surface-mount, lower-power (<35 W) designs with limited heatsinking; not mechanically interchangeable.Select when board space is constrained and thermal budget allows reduced dissipation.
ST13007Same TO-220 Fullpack package; identical VCEO, IC, PC; hFE = 10–25 (lower gain spread); tF = 1.0 ns (slower).Acceptable in cost-sensitive ballast or SMPS where tighter hFE tolerance or faster switching is not required.Choose for legacy design refresh where footprint and pinout match but timing margins are relaxed.

Compared with MJD13007G and ST13007, the FJPF13007H1TTU offers superior thermal performance (40 W vs. 25 W or 40 W with looser SOA), faster switching (0.7 ns vs. 1.0 ns fall time), and guaranteed hFE binning (H1 grade), making it preferred for thermally demanding, high-efficiency 40–100 W applications.

Availability

FJPF13007H1TTU is available at Aetrix Electronics and suitable for electronic ballast control, switch-mode power supply design, AC motor starter circuits, and induction heating drivers requiring stable component supply and long-term industrial availability.

Supply support for FJPF13007H1TTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The FJPF13007H1TTU belongs to onsemi's high-voltage bipolar power transistor product line, engineered specifically for reliable, high-efficiency switching in lighting and offline power conversion systems.

FAQ

What is the maximum collector-emitter voltage rating for FJPF13007H1TTU?

The FJPF13007H1TTU has a maximum collector-emitter voltage (VCEO) rating of 400 V at TC = 25°C with open base. This rating is validated under standard test conditions (IC = 10 mA, IB = 0) and defines the absolute upper limit for DC blocking in primary-side switch applications. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Does FJPF13007H1TTU support pulse operation beyond its DC current rating?

Yes, the FJPF13007H1TTU supports pulsed collector current up to 16 A (ICP), provided pulse width ≤ 300 µs and duty cycle ≤ 2%. This capability enables short-duration surge handling in motor startup or fault-current limiting circuits, but thermal accumulation must be calculated using the SOA curves (Fig. 6) to avoid second breakdown.

What is the base-emitter saturation voltage specification for FJPF13007H1TTU?

The FJPF13007H1TTU exhibits VBE(sat) = 1.2 V typical at IC = 2 A / IB = 0.4 A, and 1.6 V typical at IC = 5 A / IB = 1 A. These values define the minimum forward bias required across the base-emitter junction to maintain transistor saturation and minimize conduction losses during active switching.

Is FJPF13007H1TTU compatible with lead-free reflow soldering processes?

Yes, the FJPF13007H1TTU is a Pb-free device and qualified for standard lead-free reflow profiles (JEDEC J-STD-020), including peak temperatures up to 260°C. Its TO-220 Fullpack package uses matte tin plating and passes thermal shock and moisture sensitivity level (MSL) testing appropriate for through-hole assembly.

How does the hFE classification "H1" affect FJPF13007H1TTU performance?

The "H1" suffix denotes a binned DC current gain range of 15–28 at VCE = 5 V and IC = 2 A. This controlled hFE spread ensures predictable base drive requirements across production lots, simplifying gate/base driver design and improving consistency in switching timing and saturation voltage for the FJPF13007H1TTU.

FJPF13007H1TTU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
8 A
Voltage - Collector Emitter Breakdown (Max):
400 V
Vce Saturation (Max) @ Ib, Ic:
3V @ 2A, 8A
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 2A, 5V
Power - Max:
40 W
Frequency - Transition:
4MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F-3

FJPF13007H1TTU FAQ

1.How can I place an order for FJPF13007H1TTU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJPF13007H1TTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJPF13007H1TTU reliable?

The price and inventory of FJPF13007H1TTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJPF13007H1TTU is usually 5 days.

3.What payment methods are accepted for FJPF13007H1TTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJPF13007H1TTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJPF13007H1TTU?

FJPF13007H1TTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJPF13007H1TTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJPF13007H1TTU?

For technical support, including FJPF13007H1TTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJPF13007H1TTU requirements.

6.How does Aetrix verify that FJPF13007H1TTU is sourced from the original manufacturer or authorized distributors?

All FJPF13007H1TTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJPF13007H1TTU meets industry standards.

7.What is the process for return or replacement of FJPF13007H1TTU?

All FJPF13007H1TTU units undergo pre-shipment inspection (PSI). If there is an issue with FJPF13007H1TTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJPF13007H1TTU part is unused and in its original packaging.

Return procedure for FJPF13007H1TTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FJPF13007H1TTU Tags

  • FJPF13007H1TTU
  • FJPF13007H1TTU PDF
  • FJPF13007H1TTU Datasheet
  • FJPF13007H1TTU Specifications
  • FJPF13007H1TTU Images
  • onsemi
  • onsemi FJPF13007H1TTU
  • Buy FJPF13007H1TTU
  • FJPF13007H1TTU Price
  • FJPF13007H1TTU Distributor
  • FJPF13007H1TTU Supplier
  • FJPF13007H1TTU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER