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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJPF13007H1TU

Name: FJPF13007H1TU
Brand: onsemi
SKU: FJPF13007H1TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJPF13007H1TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: FJPF13007H1TU.pdf

Description:: TRANS NPN 400V 8A TO-220F-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJPF13007H1TU from onsemi is a high-voltage, fast-switching NPN power transistor in TO-220 Fullpack package, rated for 400 V V_CEO, 8 A DC collector current, and 40 W power dissipation at T_C = 25°C; it delivers 15–28 h_FE at I_C = 2 A and supports electronic ballast and SMPS primary-side switching applications.

For engineers reviewing the FJPF13007H1TU datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO derating above 25°C, safe operating area (SOA) compliance under pulsed inductive loads, saturation voltage at specified I_B/I_C ratios, and thermal management with heatsink interface design.

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for high-voltage switching in inductive-load circuits. Its 4 MHz f_T, 110 pF C_ob, and sub-100 ns turn-off time (t_STG + t_F ≤ 3.7 ns) support efficient operation in 20–100 kHz SMPS topologies.

The FJPF13007H1TU features fixed three-terminal configuration with base-emitter and collector-base junctions rated to 9 V and 700 V respectively, and its SOA curves define maximum simultaneous V_CE and I_C limits under both forward- and reverse-biased conditions at defined pulse widths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines primary-side MOSFET replacement ceiling in flyback/forward converters.
I_C (DC)	8 A - Continuous collector current capability at T_C = 25°C; requires heatsink for sustained operation above ~45°C case temperature.
V_CE(sat)	1.0 V @ I_C = 2 A, I_B = 0.4 A - Low saturation voltage reduces conduction loss in hard-switched topologies.
f_T	4 MHz - Current gain bandwidth product; enables stable linear amplification up to ~1 MHz and supports gate driving of small MOSFETs.
C_ob	110 pF @ V_CB = 10 V - Output capacitance impacts switching loss and EMI in high-dV/dt environments.
t_ON + t_OFF	≤ 5.3 ns total (t_ON ≤ 1.6 ns, t_STG ≤ 3.0 ns, t_F ≤ 0.7 ns) - Fast switching minimizes transition losses in high-frequency SMPS.

Pinout & Package

TO-220 Fullpack (Case 221AT), 3-lead, through-hole package with integral metal tab electrically connected to collector; requires insulated mounting hardware when collector is not at chassis ground.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Current-controlled input terminal	Receives base drive current (max 4 A pulsed); requires series resistor to limit I_B and ensure proper h_FE-based I_C control.
2 (Collector)	Main high-voltage current path output	Connected to metal tab; must be isolated from heatsink unless circuit reference permits direct thermal coupling to collector potential.
3 (Emitter)	Low-side current return path	Common emitter configuration used in most switching applications; referenced to ground or low-side switch node.

Key Features

Feature	Design Value
High-voltage blocking	700 V V_CBO rating enables use in 380 V DC bus applications with margin against transients and ringing.
Fast switching speed	Sub-100 ns total switching time reduces energy loss per cycle and eases EMI filter design in 50–100 kHz SMPS.
Pb-free construction	RoHS-compliant lead finish meets IPC-J-STD-020 reflow profile requirements for lead-free assembly.
Controlled h_FE binning	H1 grade guarantees h_FE = 15–28 at V_CE = 5 V, I_C = 2 A, enabling predictable base drive sizing across production lots.

Applications

Electronic Ballast	Switch-Mode Power Supply
Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems. IC Role / Device Role / Timing Role: Primary-side switching transistor in resonant half-bridge topology driving lamp filaments. Use Value: 400 V V_CEO withstands lamp open-circuit voltage spikes; fast t_F ensures clean zero-voltage switching transitions.	Use Scenario: Primary-side switching in offline AC-DC adapters and industrial power supplies. IC Role / Device Role / Timing Role: Main power switch in flyback or forward converter operating at 20–60 kHz. Use Value: 40 W power dissipation and SOA-rated pulse handling enable reliable operation under overload and short-circuit conditions.
Induction Heating Driver	Motor Control Inverter Stage
Use Scenario: Half-bridge switching in domestic induction cooktops with resonant tank operation. IC Role / Device Role / Timing Role: Low-side switch in asymmetrical PWM-driven resonant inverter stage. Use Value: 110 pF C_ob and 4 MHz f_T support stable gate drive of complementary high-side devices without oscillation.	Use Scenario: Single-phase inverter leg in fan/pump motor drives with <1 kW output. IC Role / Device Role / Timing Role: High-voltage switching element in discrete H-bridge or half-bridge configurations. Use Value: 150°C T_J rating and derated SOA allow continuous operation at 85°C ambient with forced-air cooling.

Electronic Ballast

Switch-Mode Power Supply

Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems.

IC Role / Device Role / Timing Role: Primary-side switching transistor in resonant half-bridge topology driving lamp filaments.

Use Value: 400 V V_CEO withstands lamp open-circuit voltage spikes; fast t_F ensures clean zero-voltage switching transitions.

Use Scenario: Primary-side switching in offline AC-DC adapters and industrial power supplies.

IC Role / Device Role / Timing Role: Main power switch in flyback or forward converter operating at 20–60 kHz.

Use Value: 40 W power dissipation and SOA-rated pulse handling enable reliable operation under overload and short-circuit conditions.

Induction Heating Driver

Motor Control Inverter Stage

Use Scenario: Half-bridge switching in domestic induction cooktops with resonant tank operation.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical PWM-driven resonant inverter stage.

Use Value: 110 pF C_ob and 4 MHz f_T support stable gate drive of complementary high-side devices without oscillation.

Use Scenario: Single-phase inverter leg in fan/pump motor drives with <1 kW output.

IC Role / Device Role / Timing Role: High-voltage switching element in discrete H-bridge or half-bridge configurations.

Use Value: 150°C T_J rating and derated SOA allow continuous operation at 85°C ambient with forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD13007G	Same V_CEO (400 V), lower h_FE (10–20), TO-252 DPAK package, surface-mount only	Not suitable for through-hole legacy designs; limited thermal mass vs. TO-220	Select MJD13007G only for space-constrained PCBs where reflow compatibility and reduced assembly cost outweigh thermal performance trade-offs.
BU508AF	Higher V_CEO (1000 V), same TO-220 package, slower switching (t_F ≈ 1.2 μs), higher V_CE(sat) (1.5 V)	Better surge immunity but higher conduction and switching losses in 50–100 kHz designs	Choose BU508AF only for applications requiring >600 V DC bus margin or where switching frequency is below 20 kHz.

Compared with MJD13007G and BU508AF, the FJPF13007H1TU offers optimal balance of voltage rating, switching speed, and thermal capability in through-hole SMPS and ballast designs-neither sacrificing SOA robustness for footprint nor trading speed for voltage headroom.

Availability

FJPF13007H1TU is available at Aetrix Electronics and suitable for electronic ballast, switch-mode power supply, and induction heating applications requiring stable component supply and long-term industrial availability.

Supply support for FJPF13007H1TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT markets.

The FJPF13007H1TU belongs to onsemi's high-voltage bipolar power transistor family, engineered specifically for reliability-critical, high-temperature switching in lighting and power conversion equipment.

FAQ

What is the maximum junction temperature specification for the FJPF13007H1TU?

The FJPF13007H1TU has a maximum junction temperature (T_J) rating of 150°C, as specified in the Absolute Maximum Ratings table. This value defines the upper thermal limit for reliable operation; exceeding it risks permanent degradation of h_FE, increased leakage, or bond wire failure. Thermal design must ensure that actual T_J remains within this limit under worst-case ambient and power dissipation conditions.

Is the FJPF13007H1TU pin-compatible with other J13007-series transistors?

Yes-the FJPF13007H1TU shares identical TO-220 Fullpack pinout (Base–Collector–Emitter) and mechanical footprint with all J13007 variants including FJPF13007H2TU and legacy J13007 devices. However, h_FE grading (H1 vs. H2) and minor parameter shifts require verification of base drive adequacy and SOA compliance when substituting across grades.

Does the FJPF13007H1TU support avalanche energy rating?

No-onsemi's official datasheet for the FJPF13007H1TU does not specify an avalanche energy (E_AS) rating or ruggedness test data. Designers must rely on SOA curves and external snubbers or clamping circuits to manage inductive switching stress; the device is not characterized for repetitive unclamped inductive switching.

What is the typical V_BE(sat) of the FJPF13007H1TU at rated current?

The FJPF13007H1TU exhibits a typical V_BE(sat) of 1.2 V at I_C = 2 A and I_B = 0.4 A, and 1.6 V at I_C = 5 A and I_B = 1 A. These values reflect forward-biased base-emitter junction voltage under saturated switching conditions and directly impact base drive power loss and required driver current capability.

Can the FJPF13007H1TU be used in linear amplifier applications?

The FJPF13007H1TU is not optimized for linear operation: its SOA is defined only for switching duty cycles (≤2%), and thermal runaway risk increases significantly under sustained V_CE/I_C combinations outside the DC SOA boundary. While usable in Class-A/B audio stages with strict bias control and heatsinking, onsemi positions the FJPF13007H1TU exclusively for switching applications per datasheet scope.

FJPF13007H1TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 3V @ 2A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 15 @ 2A, 5V

Power - Max:: 40 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F-3

FJPF13007H1TU FAQ

1.How can I place an order for FJPF13007H1TU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJPF13007H1TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJPF13007H1TU reliable?

The price and inventory of FJPF13007H1TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJPF13007H1TU is usually 5 days.

3.What payment methods are accepted for FJPF13007H1TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJPF13007H1TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJPF13007H1TU?

FJPF13007H1TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJPF13007H1TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJPF13007H1TU?

For technical support, including FJPF13007H1TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJPF13007H1TU requirements.

6.How does Aetrix verify that FJPF13007H1TU is sourced from the original manufacturer or authorized distributors?

All FJPF13007H1TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJPF13007H1TU meets industry standards.

7.What is the process for return or replacement of FJPF13007H1TU?

All FJPF13007H1TU units undergo pre-shipment inspection (PSI). If there is an issue with FJPF13007H1TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJPF13007H1TU part is unused and in its original packaging.

Return procedure for FJPF13007H1TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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