onsemi FJPF13009H1TU

Overview

FJPF13009H1TU from ON Semiconductor is a 700 V, 12 A NPN silicon epitaxial planar transistor in TO-220F package, designed for high-voltage, high-speed switching in power conversion circuits. It delivers 50 W total device dissipation at TC = 25°C, features hFE classification H1 (8–17 at IC = 5 A), and supports electronic ballasts and switched-mode power supplies.

For engineers reviewing the FJPF13009H1TU datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO(sus) = 400 V, tON = 1.1 μs, Cob = 180 pF, VCE(sat) = 1.0 V @ IC = 5 A/IB = 1 A, and TO-220F thermal performance with insulated tab.

Technical Context

The FJPF13009H1TU operates as a high-voltage NPN bipolar junction transistor optimized for hard-switching applications where fast turn-on (tON = 1.1 μs) and low storage time (tSTG = 3.0 μs) reduce switching losses. Its 700 V VCBO rating enables use in 400 V DC bus systems with margin, while the TO-220F package provides electrical isolation between collector and mounting surface.

It exhibits forward-biased safe operating area (FBSOA) up to 100 V/10 A at 100 μs pulse width and reverse-biased SOA validated to 50 V/1000 A. The device's fT = 4 MHz and Cob = 180 pF at VCB = 10 V support stable operation in resonant and quasi-resonant topologies.

Key Specifications

Pinout & Package

Package: TO-220F (Full-pack, insulated tab), 3-lead, vertical mounting with metal tab electrically isolated from collector. Dimensions comply with EIAJ SC91A except for support pin hole option.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with ST13009D and BU508AF, the FJPF13009H1TU offers tighter hFE control (H1 bin), faster switching (1.1 μs vs. 1.5/2.5 μs), and insulated TO-220F packaging-making it optimal for compact, thermally constrained 400 V SMPS and ballast designs requiring repeatable drive design.

Availability

FJPF13009H1TU is available at Aetrix Electronics and suitable for electronic ballasts, switched-mode power supplies, and motor control systems requiring stable component supply, long-term manufacturability, and traceable sourcing from an ON Semiconductor-qualified channel.

Supply support for FJPF13009H1TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor supplier specializing in power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The FJPF13009H1TU belongs to ON Semiconductor's high-voltage bipolar transistor product line, engineered specifically for cost-effective, robust switching in 20–100 kHz power conversion systems where reliability and thermal performance are critical.

FAQ

What is the maximum collector-emitter sustaining voltage for FJPF13009H1TU?

The FJPF13009H1TU has a guaranteed collector-emitter sustaining voltage VCEO(sus) of 400 V at IC = 10 mA and IB = 0. This rating defines its usable blocking capability in switching applications and is validated under pulsed test conditions per datasheet Figure 4. Designers must ensure operating voltage stays within this limit with appropriate safety margin for transients.

Does FJPF13009H1TU have an electrically insulated collector tab?

Yes, the FJPF13009H1TU uses the TO-220F (full-pack) package, which features an electrically insulated metal tab connected to the collector. This eliminates the need for insulating washers or pads when mounting to a heatsink, simplifying mechanical assembly and improving thermal interface reliability compared to standard TO-220 variants.

What is the hFE range for FJPF13009H1TU and how is it verified?

The FJPF13009H1TU is binned to the H1 classification, guaranteeing a DC current gain (hFE1) of 8–17 measured at VCE = 5 V and IC = 5 A. This range is confirmed during final test and marked on the device as "J13009-1". The binning enables predictable base drive design without oversizing driver stages for worst-case gain variation.

Can FJPF13009H1TU replace FJPF13009H2TU in a design?

Yes, the FJPF13009H1TU can replace FJPF13009H2TU in most designs, but with attention to hFE differences: H1 specifies 8–17 gain, while H2 specifies 15–28. If the original design relies on minimum hFE ≥15 for reliable saturation, H1 may require increased base drive current. Verify VCE(sat) and thermal performance under worst-case H1 gain before substitution.

What thermal derating applies to FJPF13009H1TU above 25°C case temperature?

The FJPF13009H1TU has a linear thermal derating slope of 0.4 W/°C above TC = 25°C, as shown in Figure 8 of the datasheet. At TC = 100°C, its maximum allowable power dissipation drops to 20 W. Proper heatsink sizing must account for ambient temperature, airflow, and interface resistance to maintain TC ≤ 100°C for continuous 12 A operation.