onsemi FJPF13009H2TU

Overview

FJPF13009H2TU from ON Semiconductor is a 700 V, 12 A NPN silicon epitaxial planar transistor in TO-220F package, optimized for high-voltage switching applications with hFE bin H2 (15–28 at IC = 5 A), VCE(sat) ≤ 1.5 V at IC = 8 A/IB = 1.6 A, and tON = 1.1 μs. It serves as a main switch in electronic ballasts and switched-mode power supplies requiring robust voltage blocking and fast turn-on.

For engineers reviewing the FJPF13009H2TU datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO = 400 V, IC = 12 A DC rating, Cob = 180 pF at 10 V, fT = 4 MHz, and thermal performance under TC = 25°C with PD = 50 W - all critical for reliable high-power switching design validation.

Technical Context

The FJPF13009H2TU operates as a single NPN bipolar junction transistor with fixed three-terminal topology (Base–Collector–Emitter), designed for linear and saturated switching modes. Its 700 V VCBO and 400 V VCEO ratings support operation in off-line AC/DC converters where transient overvoltage immunity is essential.

It delivers defined gain behavior across two hFE bins (H1/H2), with H2 specifying 15–28 at VCE = 5 V/IC = 5 A and 6–30 at IC = 8 A. Switching timing parameters - tON = 1.1 μs, tSTG = 3.0 μs, tF = 0.7 μs - are characterized under standardized 125 V, 8 A, RL = 15.6 Ω conditions, enabling predictable gate drive sizing.

Key Specifications

Pinout & Package

Package: TO-220F (Full-pack, insulated tab), 3-lead through-hole, thermally enhanced with isolated collector tab. Mounting requires mechanical insulation and proper heatsinking due to 50 W dissipation capability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with ST13009D and BU508AF, the FJPF13009H2TU offers verified hFE binning (H2), tighter VCE(sat) spec (≤1.5 V), and faster tON (1.1 μs), making it optimal for cost-sensitive, high-volume electronic ballasts and SMPS where predictable gain and switching speed are design-critical.

Availability

FJPF13009H2TU is available at Aetrix Electronics and suitable for electronic ballasts, switched-mode power supplies, and motor control systems requiring stable component supply, consistent hFE binning, and TO-220F thermal reliability.

Supply support for FJPF13009H2TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices, with heritage from Fairchild Semiconductor.

The FJPF13009H2TU belongs to ON Semiconductor's high-voltage bipolar transistor product line, engineered specifically for robust, cost-effective switching in lighting, power conversion, and motor drive applications.

FAQ

What is the hFE range guaranteed for FJPF13009H2TU?

The FJPF13009H2TU is binned to hFE2 classification: minimum 15 and maximum 28 at VCE = 5 V and IC = 5 A, and minimum 6 and maximum 30 at IC = 8 A. This binning ensures predictable base drive requirements and consistent switching behavior across production lots of the FJPF13009H2TU.

Does FJPF13009H2TU have an insulated tab?

Yes, the FJPF13009H2TU uses the TO-220F package, which features a fully insulated collector tab. This allows direct mounting to a grounded heatsink without electrical isolation hardware, simplifying thermal management in high-voltage applications such as those using the FJPF13009H2TU in offline SMPS designs.

What is the maximum allowable collector current for FJPF13009H2TU in continuous operation?

The FJPF13009H2TU supports 12 A of continuous collector current (IC) at case temperature TC = 25°C. Derating is required above 25°C per the published power derating curve - for example, at TC = 100°C, the usable IC drops to approximately 6.5 A to maintain junction temperature ≤150°C.

Can FJPF13009H2TU replace FJPF13009H1TU in existing designs?

Yes, the FJPF13009H2TU is a direct replacement for FJPF13009H1TU in most applications, sharing identical package, pinout, and absolute maximum ratings. The only functional difference is hFE binning: H2 (15–28) vs. H1 (8–17). Designers should verify base drive sufficiency for the higher minimum hFE of the FJPF13009H2TU.

What is the typical Cob value of FJPF13009H2TU and why does it matter?

The FJPF13009H2TU has a typical output capacitance (Cob) of 180 pF at VCB = 10 V. This parameter directly affects switching loss and EMI generation during turn-off transitions. Lower Cob enables faster voltage rise times and reduced energy loss in hard-switched topologies where the FJPF13009H2TU is commonly deployed.