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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJPF3305H1TU

Name: FJPF3305H1TU
Brand: onsemi
SKU: FJPF3305H1TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJPF3305H1TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: FJPF3305H1TU.pdf

Description:: TRANS NPN 400V 4A TO-220F-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJPF3305H1TU from ON Semiconductor is a high-voltage NPN bipolar junction transistor (BJT) designed for switch-mode power applications, featuring 400 V V_CEO, 4 A I_C (DC), 30 W P_C at T_a = 25°C, and 4 MHz f_T; used in electronic ballasts and switching regulators.

For engineers reviewing the FJPF3305H1TU datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, saturation voltage under 4 A load, thermal derating behavior, safe operating area (SOA) compliance, and TO-220F package suitability for forced-air or heatsink-mounted high-power switching.

Technical Context

The FJPF3305H1TU operates as a single NPN switching transistor with fixed gain classification H1 (h_FE2 = 19–28 at I_C = 2 A), optimized for hard-switched topologies where fast turn-on (t_ON = 0.8 μs) and controlled storage time (t_STG = 4.0 μs) reduce switching losses. It supports DC and pulse collector currents up to 4 A and 8 A respectively, with base drive requiring up to 2 A I_B.

Its SOA is characterized for both forward-biased (FBSOA) and reverse-biased (RBSOA) conditions, enabling reliable operation in inductive load switching such as lamp ballast chokes and flyback transformer primary drives. The device's Cob = 65 pF at V_CB = 10 V limits high-frequency Miller effects in gate-drive-coupled circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Withstands 400 V collector-emitter blocking voltage before avalanche, suitable for 350 V DC bus designs with safety margin.
I_C (DC)	4 A - Maximum continuous collector current; defines steady-state power stage sizing for ballast or SMPS output stages.
V_CE(sat)	1.0 V @ I_C = 4 A, I_B = 1 A - Low saturation voltage minimizes conduction loss and heatsink requirements in high-current switching.
f_T	4 MHz - Current-gain bandwidth supports stable switching up to ~200 kHz with adequate gain margin in self-oscillating or driver-controlled topologies.
t_STG	4.0 μs - Storage time directly impacts minimum off-time and maximum practical switching frequency in hard-switched converters.
C_ob	65 pF @ V_CB = 10 V - Output capacitance affects turn-off energy and snubber design in high-dV/dt environments.
P_C	30 W @ T_a = 25°C - Thermal limit determines heatsink selection; derates linearly above 25°C case temperature per Figure 11.

Pinout & Package

Supplied in TO-220F (Full-pack) package with insulated tab, non-isolated leads, and standard 3-pin vertical mounting footprint. Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives base current to saturate or cut off the transistor; requires ≥1 A drive for full 4 A I_C conduction.
2 (Collector)	High-side power node	Internally connected to metal tab; must be electrically isolated from heatsink unless using insulating washer or pad.
3 (Emitter)	Current return path	Serves as low-side reference; carries full load current and must be routed with low-inductance layout to minimize switching spikes.

Key Features

Feature	Design Value
High-voltage blocking	700 V V_CBO enables use in 400–450 V DC link applications with robust overvoltage margin.
Fast switching	Combined t_ON + t_STG + t_F = 5.7 μs supports 100–200 kHz operation in resonant and quasi-resonant ballast drivers.
H1 gain binning	Guaranteed h_FE2 = 19–28 at I_C = 2 A ensures consistent base drive design across production lots.
TO-220F insulation	Plastic body with insulated tab allows direct heatsink mounting without additional isolation hardware in cost-sensitive ballast modules.

Applications

Electronic Ballast Control	Switching Regulator Primary Switch
Use Scenario: Drives resonant LC tank in fluorescent lamp electronic ballasts to ignite and regulate lamp current. IC Role / Device Role / Timing Role: Main high-voltage switching element in half-bridge or single-ended flyback topology, handling 50–100 kHz switching. Use Value: 400 V V_CEO and 4 A I_C support 36–40 W lamp systems; low V_CE(sat) reduces thermal stress during sustained conduction.	Use Scenario: Serves as primary-side switch in offline AC/DC flyback or forward converters for industrial power supplies. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from primary winding to secondary side. Use Value: RBSOA rating supports safe turn-off under inductive kickback; 30 W P_C enables compact heatsinking in enclosed enclosures.
DC Motor Commutation	Inductive Load Driver
Use Scenario: Controls brushed DC motor phase current in 24–48 V industrial actuators with PWM speed regulation. IC Role / Device Role / Timing Role: Low-side or high-side switch in H-bridge or single-FET drive configuration. Use Value: 8 A I_CP handles motor stall currents; 4 MHz f_T ensures clean PWM edge fidelity up to 20 kHz carrier frequency.	Use Scenario: Switches solenoids, relays, or transformers in HVAC control panels and PLC output modules. IC Role / Device Role / Timing Role: Robust discrete switch interfacing microcontroller GPIO to high-energy inductive loads. Use Value: 700 V V_CBO prevents breakdown during L·di/dt transients; TO-220F package simplifies mechanical mounting on DIN-rail carriers.

Electronic Ballast Control

Switching Regulator Primary Switch

Use Scenario: Drives resonant LC tank in fluorescent lamp electronic ballasts to ignite and regulate lamp current.

IC Role / Device Role / Timing Role: Main high-voltage switching element in half-bridge or single-ended flyback topology, handling 50–100 kHz switching.

Use Value: 400 V V_CEO and 4 A I_C support 36–40 W lamp systems; low V_CE(sat) reduces thermal stress during sustained conduction.

Use Scenario: Serves as primary-side switch in offline AC/DC flyback or forward converters for industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from primary winding to secondary side.

Use Value: RBSOA rating supports safe turn-off under inductive kickback; 30 W P_C enables compact heatsinking in enclosed enclosures.

DC Motor Commutation

Inductive Load Driver

Use Scenario: Controls brushed DC motor phase current in 24–48 V industrial actuators with PWM speed regulation.

IC Role / Device Role / Timing Role: Low-side or high-side switch in H-bridge or single-FET drive configuration.

Use Value: 8 A I_CP handles motor stall currents; 4 MHz f_T ensures clean PWM edge fidelity up to 20 kHz carrier frequency.

Use Scenario: Switches solenoids, relays, or transformers in HVAC control panels and PLC output modules.

IC Role / Device Role / Timing Role: Robust discrete switch interfacing microcontroller GPIO to high-energy inductive loads.

Use Value: 700 V V_CBO prevents breakdown during L·di/dt transients; TO-220F package simplifies mechanical mounting on DIN-rail carriers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage BJT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF30N60M2	MOSFET (600 V, 30 A, R_DS(on) = 0.13 Ω); gate-driven, no base current required.	Better efficiency above 50 kHz; higher cost; requires gate driver IC; not direct replacement due to different drive architecture.	Select when switching frequency >150 kHz or conduction loss dominates thermal budget.
BU508A	BJT (1500 V V_CEO, 10 A I_C, slower t_STG = 10 μs); legacy TO-3P package.	Higher voltage margin but larger footprint and lower f_T; suited for line-frequency SCR-triggered ballasts.	Select when system requires >600 V standoff or existing TO-3P board layout reuse is mandatory.

Compared with STF30N60M2 and BU508A, the FJPF3305H1TU offers optimal balance of voltage rating, switching speed, and drive simplicity for 40–120 kHz electronic ballasts and medium-power SMPS-without gate driver overhead or excessive SOA conservatism.

Availability

FJPF3305H1TU is available at Aetrix Electronics and suitable for electronic ballasts, switching regulators, and inductive load drivers requiring stable component supply, long-lifecycle availability, and traceable sourcing for industrial OEM programs.

Supply support for FJPF3305H1TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic solutions for automotive, industrial, and cloud infrastructure markets.

The FJPF3305H1TU belongs to ON Semiconductor's high-voltage discrete BJT portfolio, engineered specifically for cost-sensitive, thermally constrained switch-mode lighting and power conversion systems.

FAQ

What is the maximum allowable case temperature for continuous operation of the FJPF3305H1TU?

The FJPF3305H1TU has a maximum junction temperature of 150°C and a storage temperature range of –65°C to 150°C. Its power dissipation derates linearly above 25°C case temperature, reaching zero at approximately 175°C per Figure 11. For reliable continuous operation, keep T_C ≤ 125°C with appropriate heatsinking. Always verify thermal performance using actual board layout and ambient conditions in your application.

Does the FJPF3305H1TU have a built-in base-emitter resistor or protection diode?

No, the FJPF3305H1TU is a bare NPN bipolar transistor with no integrated base-emitter resistor or clamp diode. External base resistors must be sized to deliver ≥1 A peak base current for full 4 A collector conduction, and external clamping (e.g., Baker clamp or Schottky diode) is recommended to improve switching speed and prevent saturation overshoot. This discrete architecture gives full design control but requires careful drive circuit implementation.

Can the FJPF3305H1TU replace the FJPF3305H2TU in the same PCB layout?

Yes, the FJPF3305H1TU and FJPF3305H2TU share identical TO-220F packaging, pinout, and absolute maximum ratings. The only difference is h_FE2 binning: H1 specifies 19–28, while H2 specifies 26–35 at I_C = 2 A. No PCB changes are required, but base drive may need adjustment if the original design relied on the higher minimum gain of the H2 variant.

What is the safe operating area (SOA) limitation for pulsed operation of the FJPF3305H1TU?

The FJPF3305H1TU's SOA is defined in Figures 9 and 10 of its datasheet. For single-pulse operation at T_C = 25°C, it supports up to 10 A at 100 V or 4 A at 400 V for pulse widths ≤500 μs. At 1 ms, max V_CE drops to ~250 V at 4 A. Exceeding SOA boundaries risks second breakdown. Always apply derating for elevated case temperatures and verify with oscilloscope-based V_CE/I_C trajectory analysis.

Is the FJPF3305H1TU RoHS compliant and halogen-free?

Yes, the FJPF3305H1TU is RoHS compliant and halogen-free per ON Semiconductor's product change notices and material declarations. It meets JEDEC J-STD-609 Category 1 for bromine/chlorine content and complies with EU Directive 2011/65/EU. Full compliance documentation-including test reports and substance declarations-is available via ON Semiconductor's website using the FJPF3305H1TU part number.

FJPF3305H1TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 1A, 4A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 19 @ 1A, 5V

Power - Max:: 30 W

Frequency - Transition:: 4MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F-3

FJPF3305H1TU FAQ

1.How can I place an order for FJPF3305H1TU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJPF3305H1TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJPF3305H1TU reliable?

The price and inventory of FJPF3305H1TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJPF3305H1TU is usually 5 days.

3.What payment methods are accepted for FJPF3305H1TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJPF3305H1TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJPF3305H1TU?

FJPF3305H1TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJPF3305H1TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJPF3305H1TU?

For technical support, including FJPF3305H1TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJPF3305H1TU requirements.

6.How does Aetrix verify that FJPF3305H1TU is sourced from the original manufacturer or authorized distributors?

All FJPF3305H1TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJPF3305H1TU meets industry standards.

7.What is the process for return or replacement of FJPF3305H1TU?

All FJPF3305H1TU units undergo pre-shipment inspection (PSI). If there is an issue with FJPF3305H1TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJPF3305H1TU part is unused and in its original packaging.

Return procedure for FJPF3305H1TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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