onsemi FJPF5021R

Overview

FJPF5021R from onsemi is an NPN silicon power transistor in TO-220 Fullpack package, rated for 500 V V_CEO, 5 A I_C (DC), and 40 W P_C at T_C = 25°C, with t_F = 0.1 µs typical fall time - designed for high-voltage switching in industrial motor drives and AC-DC power supplies.

For engineers reviewing the FJPF5021R datasheet, pinout, applications, or equivalent options, key selection criteria include its 500 V sustaining voltage under clamped inductive switching (V_CEX(sus)), wide forward/reverse SOA, Pb-free TO-220F-3SG mechanical outline, and h_FE grade R (15–30 at I_C = 0.6 A).

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for high-voltage, medium-current switching. Its design supports robust clamped inductive turn-off with V_CEX(sus) = 500 V at I_C = 2.5 A and symmetric ±1 A base drive, and features low saturation voltages (V_CE(sat) ≤ 1 V, V_BE(sat) ≤ 1.5 V) at I_C = 3 A / I_B = 0.6 A.

The FJPF5021R delivers fast switching performance with t_ON ≤ 0.5 µs, t_STG ≤ 3 µs, and t_F = 0.1 µs (typ.), enabled by f_T = 15 MHz and Cob = 80 pF at V_CB = 10 V - making it suitable for hard-switched converters operating up to ~100 kHz.

Key Specifications

Pinout & Package

Package: TO-220 Fullpack (Case 221AT), 3-lead, insulated tab, Pb-free. Mounting surface is electrically isolated from collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with ST13007 and MJE13009, the FJPF5021R provides superior 500 V clamped switching capability and faster fall time, making it uniquely suited for 400 V AC-input systems requiring both voltage headroom and dynamic performance - while trading off some continuous current rating.

Availability

FJPF5021R is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC switch-mode power supplies, induction heating systems, and high-voltage DC power distribution requiring stable component supply and long-term lifecycle assurance.

Supply support for FJPF5021R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and discrete devices.

The FJPF5021R belongs to onsemi's high-voltage bipolar transistor product line, engineered specifically for rugged, high-reliability switching in industrial power conversion and motor control applications.

FAQ

What is the maximum collector-emitter voltage rating for the FJPF5021R?

The FJPF5021R has a maximum collector-emitter voltage rating (V_CEO) of 500 V at T_C = 25°C. This rating applies under open-base conditions with I_C = 5 mA. The device also supports a clamped sustaining voltage (V_CEX(sus)) of 500 V under active base drive (±1 A), confirming its suitability for inductive switching in 400 V AC-derived systems. Exceeding this voltage risks irreversible breakdown.

Does the FJPF5021R have a built-in base-emitter resistor or integrated protection features?

No, the FJPF5021R is a standard NPN bipolar transistor without internal base-emitter resistors, protection diodes, or integrated drivers. It requires external base drive circuitry - including appropriate current-limiting and reverse-base protection - as specified in the onsemi datasheet. The FJPF5021R relies on external design for safe operation, consistent with discrete BJT architecture.

What is the h_FE grade designation for FJPF5021R and how does it affect base drive design?

The "R" suffix in FJPF5021R indicates h_FE1 = 15–30 at V_CE = 5 V and I_C = 0.6 A. This gain range directly determines required base current: for 3 A collector current, minimum I_B ≈ 100 mA (assuming h_FE = 30), but design should target ≥0.6 A per datasheet test condition to ensure saturation. The FJPF5021R's h_FE2 drops to ≥8 at I_C = 3 A, necessitating robust base drive capability.

Can the FJPF5021R be used in parallel configurations for higher current handling?

Parallel operation of FJPF5021R devices is not recommended without individual emitter degeneration resistors and matched base drive. Due to inherent h_FE variation (grade R: 15–30) and thermal coupling effects, unequal current sharing may occur - especially under transient conditions. The FJPF5021R datasheet does not specify matching or paralleling guidelines, and its SOA curves assume single-device operation.

Is the FJPF5021R RoHS-compliant and what is its lead-free status?

Yes, the FJPF5021R is explicitly marked as a Pb-free device in the onsemi datasheet. It complies with RoHS Directive 2011/65/EU and subsequent amendments. The TO-220F-3SG package uses lead-free terminations and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. No exemptions apply - the FJPF5021R contains no intentionally added lead.