onsemi FJPF5021RTSTU

Overview

FJPF5021RTSTU from onsemi is an NPN silicon power transistor in TO-220 Fullpack package, rated for 500 V V_CEO, 5 A I_C (DC), and 40 W P_C at T_C = 25°C, with t_F = 0.1 µs typical fall time and wide forward/reverse bias SOA - used in high-voltage DC-DC converters and industrial motor control snubber circuits.

For engineers reviewing the FJPF5021RTSTU datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO ≥ 500 V, I_C ≥ 5 A, t_F ≤ 0.3 µs, SOA robustness under inductive switching, and TO-220F-3SG thermal performance in forced-air or heatsink-mounted designs.

Technical Context

This device operates as a high-voltage, medium-current NPN switch optimized for ruggedized inductive load switching. Its 800 V V_CBO, 500 V V_CEO, and 500 V V_CEX(sus) support operation in clamped inductive turn-off conditions with L = 1 mH and I_B1 = −I_B2 = 1 A.

It delivers h_FE1 = 15–50 at I_C = 0.6 A and h_FE2 = 8 min at I_C = 3 A, with V_CE(sat) ≤ 1 V and V_BE(sat) ≤ 1.5 V under I_C = 3 A / I_B = 0.6 A drive - enabling efficient base-driven switching in fixed-bias or Darlington-configured gate drivers.

Key Specifications

Pinout & Package

Package: TO-220 Fullpack (Case 221AT), 3-lead, insulated tab, vertical mounting with screw-hole flange. Thermal resistance R_θJC ≈ 0.625°C/W (typical, per onsemi thermal curves).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Compared with MJD122G and BU508AF, FJPF5021RTSTU offers optimal balance of 500 V capability, 0.1 µs speed, and TO-220 thermal performance for 100–300 W industrial power stages - neither alternative matches its combination of voltage, speed, and SOA in this specific rating class.

Availability

FJPF5021RTSTU is available at Aetrix Electronics and suitable for industrial motor control, offline SMPS design, and high-voltage relay driving requiring stable component supply across multi-year production cycles.

Supply support for FJPF5021RTSTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The FJPF5021RTSTU belongs to onsemi's high-voltage bipolar power transistor product line, engineered for reliability in harsh industrial environments where sustained overvoltage, thermal cycling, and inductive stress are routine operational conditions.

FAQ

What is the maximum safe collector-emitter voltage for FJPF5021RTSTU in continuous operation?

The FJPF5021RTSTU has a rated V_CEO of 500 V at T_C = 25°C, meaning it can safely block up to 500 V between collector and emitter with zero base current. Derating applies above 25°C case temperature - consult Figure 8 in the datasheet for linear power derating. Operation beyond 500 V risks avalanche breakdown and permanent damage unless transient clamping is confirmed.

Does FJPF5021RTSTU support pulsed collector current higher than its DC rating?

Yes, FJPF5021RTSTU supports I_CP = 10 A for short pulses, defined per the datasheet's absolute maximum ratings. This rating assumes duty cycle < 1%, pulse width ≤ 100 µs, and adequate heatsinking. Exceeding these conditions risks secondary breakdown or thermal runaway - always verify pulse SOA boundaries using Figure 6 and Figure 7.

Is FJPF5021RTSTU pin-compatible with other TO-220F-3SG transistors like MJE13009?

No, FJPF5021RTSTU is not pin-compatible with MJE13009. While both use TO-220F-3SG packages, their pinouts differ: FJPF5021RTSTU assigns Base–Collector–Emitter to pins 1–2–3, whereas MJE13009 uses Emitter–Base–Collector. Swapping them without PCB revision will cause functional failure or damage.

What is the typical base-emitter saturation voltage for FJPF5021RTSTU at rated current?

The typical V_BE(sat) for FJPF5021RTSTU is 1.5 V maximum at I_C = 3 A and I_B = 0.6 A, per the Electrical Characteristics table. At lower currents (e.g., I_C = 0.6 A), V_BE(sat) drops to ~1.2 V. Designers should size base drive accordingly to ensure full saturation and avoid linear-mode heating.

Can FJPF5021RTSTU be used in avalanche mode for energy clamping?

No, FJPF5021RTSTU is not rated or characterized for repetitive avalanche operation. Its V_CEX(sus) = 500 V rating applies only under specified clamped inductive switching conditions (I_B1 = −I_B2 = 1 A, L = 1 mH). Intentional avalanche use risks parametric shift or catastrophic failure - external snubbers or TVS diodes are recommended for unclamped transients.