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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJPF5027OTU

Name: FJPF5027OTU
Brand: onsemi
SKU: FJPF5027OTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJPF5027OTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: FJPF5027OTU.pdf

Description:: TRANS NPN 800V 3A TO-220F-3

Quantity:: RFQ Add To RFQ list

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Inventory:240

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Product details

Overview

FJPF5027OTU from onsemi is an NPN silicon power transistor designed for high-voltage switching applications, featuring 800 V V_CEO, 3 A DC collector current, 40 W power dissipation at T_C = 25°C, and 15 MHz f_T. It operates in hard-switched flyback and snubberless inductive load circuits up to 800 V bus voltage.

For engineers reviewing the FJPF5027OTU datasheet, pinout, applications, or equivalent options, key selection criteria include sustained 800 V V_CEX(sus) under clamped inductive switching, wide forward-bias SOA up to 125°C case temperature, and verified 0.5 µs turn-on time with 2 A load and 400 V supply.

Technical Context

This device employs a planar epitaxial base structure optimized for rugged high-voltage operation and low saturation voltage. Its 60 pF Cob at 10 V and 15 MHz f_T support stable high-speed switching in resonant and quasi-resonant topologies.

The FJPF5027OTU delivers defined h_FE range (10–40 at I_C = 0.2 A) and guaranteed V_CE(sat) ≤ 2 V at I_C = 1.5 A / I_B = 0.3 A, enabling predictable base drive design in fixed-frequency PWM controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	800 V - Sustains full 800 V DC bus in offline SMPS without derating at 25°C
I_C (DC)	3 A - Supports continuous output power up to ~1.2 kW in single-ended converters
P_C @ T_C=25°C	40 W - Requires heatsink with ≤ 3.1°C/W thermal resistance for safe 150°C junction operation
f_T	15 MHz - Enables clean switching up to ~500 kHz with controlled ringing in gate-driven configurations
t_ON	0.5 µs - Measured with V_CC = 400 V, I_C = 2 A, R_L = 200 Ω, supports <1 µs switching cycles
C_ob	60 pF @ 10 V - Limits Miller-induced dv/dt turn-on risk in high-side configurations
h_FE Range	10–40 @ V_CE = 5 V - Ensures stable base current scaling across production lots

Pinout & Package

TO-220 Fullpack (Case 221AT), insulated tab, vertical mounting orientation, 3-lead through-hole package with integral heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Current-controlled input terminal	Receives 0.3 A base drive for 1.5 A collector conduction; requires ≥100 mA minimum for reliable saturation
2 (Collector)	Main high-voltage current path	Connected to primary winding or high-side rail; rated for 800 V sustained clamped inductive stress
3 (Emitter)	Low-side reference and current return	Common emitter configuration only; not isolated - ties directly to ground or source return path

Key Features

Feature	Design Value
High Voltage Capability	800 V V_CEO and 800 V V_CEX(sus) enable direct replacement of legacy 600 V transistors in upgraded 800 V PFC stages
Wide Forward-Bias SOA	Validated safe operating area up to 125°C case temperature supports unforced convection cooling in space-constrained designs
Clamped Inductive Switching Robustness	Guaranteed 800 V sustaining voltage under L = 2 mH, I_B1 = −I_B2 = 0.3 A conditions eliminates need for external clamp diodes
Pb-Free Construction	RoHS-compliant lead finish and internal materials meet J-STD-609 Class 1 moisture sensitivity requirements

Applications

Industrial Motor Drives	AC-DC Power Supplies
Use Scenario: Driving gate of IGBTs or MOSFETs in three-phase inverter half-bridges for HVAC compressors and pumps. IC Role / Device Role / Timing Role: High-voltage level-shifting switch providing isolated base drive pulses to upper-leg power devices. Use Value: 800 V V_CEX(sus) ensures reliable turn-off under 600–750 V DC link transients without external snubbers.	Use Scenario: Primary-side switching transistor in 500–1000 W offline flyback and forward converters. IC Role / Device Role / Timing Role: Main energy transfer switch controlling duty cycle and regulating output via optocoupler feedback. Use Value: 0.5 µs t_ON and 0.3 µs t_F support >300 kHz operation while maintaining <1% dead-time loss in synchronous rectified designs.
Lighting Ballasts	Induction Heating Controls
Use Scenario: Resonant switching element in electronic HID lamp ballasts operating at 20–100 kHz. IC Role / Device Role / Timing Role: Hard-switched series-resonant inverter transistor driving LC tank at zero-voltage switching transitions. Use Value: 60 pF C_ob minimizes capacitive loading on resonant network, preserving Q-factor and frequency stability.	Use Scenario: Inverter switch in medium-power (1–3 kW) domestic induction cooktops. IC Role / Device Role / Timing Role: High-current, high-dv/dt switch handling repetitive 20–50 kHz bursts into highly inductive loads. Use Value: Wide SOA up to 125°C allows operation without forced air cooling, reducing system noise and cost.

Industrial Motor Drives

AC-DC Power Supplies

Use Scenario: Driving gate of IGBTs or MOSFETs in three-phase inverter half-bridges for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-voltage level-shifting switch providing isolated base drive pulses to upper-leg power devices.

Use Value: 800 V V_CEX(sus) ensures reliable turn-off under 600–750 V DC link transients without external snubbers.

Use Scenario: Primary-side switching transistor in 500–1000 W offline flyback and forward converters.

IC Role / Device Role / Timing Role: Main energy transfer switch controlling duty cycle and regulating output via optocoupler feedback.

Use Value: 0.5 µs t_ON and 0.3 µs t_F support >300 kHz operation while maintaining <1% dead-time loss in synchronous rectified designs.

Lighting Ballasts

Induction Heating Controls

Use Scenario: Resonant switching element in electronic HID lamp ballasts operating at 20–100 kHz.

IC Role / Device Role / Timing Role: Hard-switched series-resonant inverter transistor driving LC tank at zero-voltage switching transitions.

Use Value: 60 pF C_ob minimizes capacitive loading on resonant network, preserving Q-factor and frequency stability.

Use Scenario: Inverter switch in medium-power (1–3 kW) domestic induction cooktops.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switch handling repetitive 20–50 kHz bursts into highly inductive loads.

Use Value: Wide SOA up to 125°C allows operation without forced air cooling, reducing system noise and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ST13007D	700 V V_CEO, 8 A I_C, TO-220FP package, no specified V_CEX(sus)	Limited to 700 V systems; higher current rating but narrower SOA above 100°C	Select when higher peak current (8 A pulse) is required and bus voltage remains ≤700 V
MJE13009G	400 V V_CEO, 12 A I_C, TO-220 package, 12 MHz f_T	Not suitable for 800 V applications; better for lower-voltage, higher-current motor control	Choose only for 200–400 V DC link designs where cost-sensitive high-current switching dominates

Compared with ST13007D and MJE13009G, the FJPF5027OTU uniquely combines 800 V blocking capability with validated clamped inductive switching performance and extended SOA - making it the sole option among the three for 800 V PFC and snubberless flyback designs requiring thermal margin above 100°C.

Availability

FJPF5027OTU is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, lighting ballasts, and induction heating controls requiring stable component supply and long-term manufacturability.

Supply support for FJPF5027OTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The FJPF5027OTU belongs to onsemi's high-voltage bipolar transistor family engineered specifically for ruggedized offline switching in industrial and lighting power conversion systems demanding reliability at elevated voltage and temperature.

FAQ

What is the maximum continuous collector current rating for FJPF5027OTU?

The FJPF5027OTU has a maximum DC collector current (I_C) rating of 3 A at T_C = 25°C. Derating is required above 25°C case temperature per the power derating curve in Figure 8 of the datasheet, reaching zero at 175°C. At 100°C case temperature, the usable I_C drops to approximately 1.8 A. This rating assumes proper heatsinking and operation within the forward-bias SOA.

Does FJPF5027OTU support snubberless inductive switching?

Yes, the FJPF5027OTU is explicitly characterized for snubberless operation: its V_CEX(sus) is guaranteed at 800 V under clamped inductive switching conditions (I_C = 1.5 A, I_B1 = −I_B2 = 0.3 A, L = 2 mH). This eliminates the need for external RCD snubbers in properly designed flyback and forward converters.

What is the h_FE grade marked on FJPF5027OTU?

The "O" suffix in FJPF5027OTU indicates the h_FE grade per the marking diagram: h_FE1 = 15–30 at V_CE = 5 V and I_C = 0.2 A. This mid-range gain bin enables consistent base drive design across production lots without overdesigning driver stage current capability.

Is FJPF5027OTU RoHS compliant and lead-free?

Yes, the FJPF5027OTU is a Pb−Free device as stated in the datasheet header. It complies with RoHS Directive 2011/65/EU and uses lead-free terminations and internal construction. The device meets J-STD-020 moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30°C/60% RH.

What package type does FJPF5027OTU use and how is it mounted?

FJPF5027OTU uses the TO-220 Fullpack (Case 221AT) package - a 3-lead, insulated-tab, vertical-mount through-hole variant. The collector (pin 2) connects directly to the metal tab, which must be electrically isolated from heatsink unless referenced to collector potential. Mounting requires thermal compound and mechanical torque ≤0.5 N·m on the mounting screw.

FJPF5027OTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Last Time Buy

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 800 V

Vce Saturation (Max) @ Ib, Ic:: 2V @ 300mA, 1.5A

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 200mA, 5V

Power - Max:: 40 W

Frequency - Transition:: 15MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F-3

FJPF5027OTU FAQ

1.How can I place an order for FJPF5027OTU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJPF5027OTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJPF5027OTU reliable?

The price and inventory of FJPF5027OTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJPF5027OTU is usually 5 days.

3.What payment methods are accepted for FJPF5027OTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJPF5027OTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJPF5027OTU?

FJPF5027OTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJPF5027OTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJPF5027OTU?

For technical support, including FJPF5027OTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJPF5027OTU requirements.

6.How does Aetrix verify that FJPF5027OTU is sourced from the original manufacturer or authorized distributors?

All FJPF5027OTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJPF5027OTU meets industry standards.

7.What is the process for return or replacement of FJPF5027OTU?

All FJPF5027OTU units undergo pre-shipment inspection (PSI). If there is an issue with FJPF5027OTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJPF5027OTU part is unused and in its original packaging.

Return procedure for FJPF5027OTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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