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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJV1845EMTF

Name: FJV1845EMTF
Brand: onsemi
SKU: FJV1845EMTF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJV1845EMTF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: FJV1845EMTF.pdf

Description:: TRANS NPN 120V 0.05A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJV1845EMTF from ON Semiconductor is an NPN epitaxial silicon transistor in SOT-23 package, rated for 120 V V_CEO, 50 mA I_C, and 300 mW P_C, with hFE2 classification of 200–400 and f_T up to 110 MHz. It serves as a general-purpose amplifier or switching device in low-power signal conditioning circuits.

For engineers reviewing the FJV1845EMTF datasheet, pinout, applications, or equivalent options, key selection criteria include its V_CEO/V_CB0 rating, hFE consistency across I_C = 0.1–1 mA, low V_CE(sat) at I_C/I_B = 10, and SOT-23 thermal performance in space-constrained analog stages.

Technical Context

This NPN transistor features epitaxial base construction enabling stable hFE over temperature and frequency. Its 110 MHz f_T supports audio-frequency amplification and low-speed digital switching, while the 2.5 pF Cob ensures minimal Miller effect in common-emitter configurations.

The device operates with V_BE(on) between 0.55 V and 0.65 V at I_C = 1 mA, and achieves V_CE(sat) ≤ 0.3 V under forced β = 10 - confirming suitability for saturated-switching applications where low conduction loss is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	120 V - supports operation in 100 V rail systems with margin for transients
I_C	50 mA - suitable for biasing small-signal stages or driving LED/relay loads
hFE2	200–400 - tight DC current gain binning enables predictable bias point stability
f_T	50–110 MHz - usable for audio amplifiers and sub-50 MHz clock buffering
V_CE(sat)	0.07–0.3 V at I_C=10 mA/I_B=1 mA - minimizes power loss in saturation-mode switching
Cob	1.6–2.5 pF at V_CB=30 V - limits high-frequency feedback in amplifier designs
P_C	300 mW - requires thermal derating above 25°C ambient per published curve

Pinout & Package

SOT-23 plastic surface-mount package (3-pin, standard footprint), dimensions per JEDEC TO-236AB: 2.90 mm × 1.30 mm × 1.00 mm max height, with gull-wing leads and exposed pad not present.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Current-controlled input node	Accepts forward-biased drive to enable conduction; requires series resistor for I_B limiting
2 (Emitter)	Common reference terminal	Connected to ground or low-impedance return path; carries full I_C + I_B
3 (Collector)	Output current sink	Delivers amplified I_C to load; voltage swing limited by V_CEO and supply rail

Key Features

Feature	Design Value
Complementary pair availability	FJV1845EMTF pairs with FJV992 (PNP) for push-pull output stages
High V_CB0 rating	120 V - enables use in bootstrap gate-drive or high-side sensing circuits
Low leakage	I_CBO ≤ 50 nA at V_CB = 120 V - preserves bias integrity in high-impedance nodes
Marking code	"6E" laser marking - traceable to hFE2 bin (200–400) per Fairchild Rev. B1 spec

Applications

Audio Pre-amplifier Stage	LED Driver Switch
Use Scenario: Low-noise voltage amplification of microphone or sensor signals before ADC sampling. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration. Use Value: hFE2 binning and low Cob ensure consistent gain flatness up to 20 kHz with <1% distortion at 1 V_PP.	Use Scenario: On/off control of indicator or status LEDs in portable instrumentation. IC Role / Device Role / Timing Role: Saturated switch interfacing microcontroller GPIO to 5–24 V LED strings. Use Value: V_CE(sat) ≤ 0.3 V at I_C = 20 mA reduces power dissipation to <6 mW, eliminating heatsinking.
Level Translation Interface	Oscillator Buffer Stage
Use Scenario: Shifting logic levels between 3.3 V MCU outputs and 12 V peripheral control inputs. IC Role / Device Role / Timing Role: Common-emitter level shifter with pull-up to higher rail. Use Value: 120 V V_CEO provides headroom for transient suppression and ESD robustness on the high-side rail.	Use Scenario: Isolating and amplifying crystal oscillator output before distribution to multiple clock domains. IC Role / Device Role / Timing Role: Non-inverting buffer stage with controlled loading. Use Value: f_T ≥ 50 MHz ensures minimal phase shift and jitter degradation below 10 MHz fundamental frequencies.

Audio Pre-amplifier Stage

LED Driver Switch

Use Scenario: Low-noise voltage amplification of microphone or sensor signals before ADC sampling.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration.

Use Value: hFE2 binning and low Cob ensure consistent gain flatness up to 20 kHz with <1% distortion at 1 V_PP.

Use Scenario: On/off control of indicator or status LEDs in portable instrumentation.

IC Role / Device Role / Timing Role: Saturated switch interfacing microcontroller GPIO to 5–24 V LED strings.

Use Value: V_CE(sat) ≤ 0.3 V at I_C = 20 mA reduces power dissipation to <6 mW, eliminating heatsinking.

Level Translation Interface

Oscillator Buffer Stage

Use Scenario: Shifting logic levels between 3.3 V MCU outputs and 12 V peripheral control inputs.

IC Role / Device Role / Timing Role: Common-emitter level shifter with pull-up to higher rail.

Use Value: 120 V V_CEO provides headroom for transient suppression and ESD robustness on the high-side rail.

Use Scenario: Isolating and amplifying crystal oscillator output before distribution to multiple clock domains.

IC Role / Device Role / Timing Role: Non-inverting buffer stage with controlled loading.

Use Value: f_T ≥ 50 MHz ensures minimal phase shift and jitter degradation below 10 MHz fundamental frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904LT1G	hFE range 100–300 (min/max), V_CEO = 40 V, f_T = 300 MHz	Limited to ≤40 V rails; higher f_T but lower breakdown margin	Select when high-frequency gain >100 MHz is required and voltage stress <40 V
BC846B,215	hFE range 200–450, V_CEO = 65 V, Cob = 4.5 pF	Lower voltage rating and higher capacitance reduce suitability for 100 V transient environments	Prefer for cost-sensitive 5–24 V logic interface where Cob <3 pF is non-critical

Compared with MMBT3904LT1G and BC846B,215, the FJV1845EMTF offers superior voltage ruggedness (120 V) and tighter hFE2 binning (200–400), making it optimal for industrial signal chains requiring both breakdown margin and bias predictability - without sacrificing SOT-23 board area.

Availability

FJV1845EMTF is available at Aetrix Electronics and suitable for audio pre-amplifiers, LED driver switches, level translation interfaces, and oscillator buffer stages requiring stable component supply and consistent hFE performance.

Supply support for FJV1845EMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power and signal management solutions, with roots in Fairchild Semiconductor's analog and discrete legacy.

The FJV1845EMTF belongs to ON Semiconductor's legacy small-signal transistor portfolio, designed for reliability-critical analog signal conditioning and low-power switching in industrial, computing, and consumer equipment.

FAQ

What is the maximum collector-emitter voltage rating for FJV1845EMTF?

The FJV1845EMTF has a maximum V_CEO rating of 120 V at T_A = 25°C. This rating remains valid up to T_J = 150°C, though derating is required above 25°C ambient per the published power derating curve. The FJV1845EMTF must not be operated beyond this limit to avoid avalanche breakdown or permanent damage.

Does FJV1845EMTF have a specified hFE bin, and how is it marked?

Yes, the FJV1845EMTF is hFE2-classified with a guaranteed range of 200–400 at V_CE = 6 V and I_C = 1 mA. This bin is laser-marked on the device as "6E" per the official Fairchild Semiconductor Rev. B1 datasheet. The marking appears on the top surface of the SOT-23 package.

Can FJV1845EMTF replace MMBT3904 in existing designs?

FJV1845EMTF is not a direct replacement for MMBT3904 due to differences in V_CEO (120 V vs. 40 V), hFE range (200–400 vs. 100–300), and Cob (2.5 pF vs. 4 pF). While pin-compatible in SOT-23, the FJV1845EMTF should only be substituted after verifying that the higher voltage rating and tighter hFE bin meet system requirements - especially in 12 V+ applications.

What is the typical V_CE(sat) of FJV1845EMTF under switching conditions?

The FJV1845EMTF achieves V_CE(sat) ≤ 0.3 V when operated with I_C = 10 mA and I_B = 1 mA (forced β = 10), and as low as 0.07 V under light-load conditions. This low saturation voltage is confirmed in the "Collector-Emitter Saturation Voltage" characteristic curve (Figure 4) of the FJV1845EMTF datasheet.

Is FJV1845EMTF RoHS compliant and lead-free?

Yes, FJV1845EMTF is RoHS compliant and lead-free, consistent with ON Semiconductor's transition from Fairchild legacy products. The device meets J-STD-609 Category 1 marking requirements and uses matte tin (Sn) termination finish on its SOT-23 leads, verified per ON Semiconductor's product change notices post-integration.

FJV1845EMTF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 50 mA

Voltage - Collector Emitter Breakdown (Max):: 120 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 400 @ 1mA, 6V

Power - Max:: 300 mW

Frequency - Transition:: 110MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

FJV1845EMTF FAQ

1.How can I place an order for FJV1845EMTF through Aetrix?

Please submit a Request for Quotation (RFQ) for FJV1845EMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJV1845EMTF reliable?

The price and inventory of FJV1845EMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJV1845EMTF is usually 5 days.

3.What payment methods are accepted for FJV1845EMTF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJV1845EMTF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJV1845EMTF?

FJV1845EMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJV1845EMTF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJV1845EMTF?

For technical support, including FJV1845EMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJV1845EMTF requirements.

6.How does Aetrix verify that FJV1845EMTF is sourced from the original manufacturer or authorized distributors?

All FJV1845EMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJV1845EMTF meets industry standards.

7.What is the process for return or replacement of FJV1845EMTF?

All FJV1845EMTF units undergo pre-shipment inspection (PSI). If there is an issue with FJV1845EMTF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJV1845EMTF part is unused and in its original packaging.

Return procedure for FJV1845EMTF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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