onsemi FJV1845PMTF

Overview

FJV1845PMTF from ON Semiconductor is an NPN epitaxial silicon transistor in SOT-23 package, rated for 120 V V_CEO, 50 mA I_C, and 300 mW P_C, with hFE2 classification of 200–400 and f_T up to 110 MHz; used in low-power amplifier and switching circuits in portable instrumentation and signal conditioning stages.

For engineers reviewing the FJV1845PMTF datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/V_CB rating, hFE consistency at 1 mA, V_CE(sat) under 10 mA/1 mA drive, Cob < 2.5 pF, and thermal derating above 25°C ambient.

Technical Context

This device operates as a general-purpose amplifying transistor with DC current gain split into hFE1 (150–580 at 0.1 mA) and hFE2 (200–400 per marking 'P'), enabling stable biasing across low-to-moderate collector currents. Its 120 V breakdown ratings support use in higher-voltage analog front-ends where rail margins exceed 50 V.

The 110 MHz f_T and 2.5 pF Cob allow operation into low-VHF band amplification, while V_BE(on) = 0.55–0.65 V at I_C = 1 mA and V_CE(sat) ≤ 0.3 V at I_C/I_B = 10 ensure predictable turn-on behavior in Class-A and saturated-switch configurations.

Key Specifications

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; 1.90 mm × 1.30 mm footprint, 1.14 mm max height, and JEDEC-standard 3-pin configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Compared with MMBT5551 and BC847B, FJV1845PMTF offers optimal balance of 120 V robustness, tight hFE2 binning, and 110 MHz bandwidth-making it preferred for industrial signal conditioning where both voltage headroom and gain predictability matter.

Availability

FJV1845PMTF is available at Aetrix Electronics and suitable for portable instrumentation, industrial sensor interfaces, and low-power amplifier circuits requiring stable component supply and long-term manufacturability.

Supply support for FJV1845PMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

FJV1845PMTF belongs to ON Semiconductor's general-purpose bipolar transistor product line, designed for reliable amplification and switching in cost-sensitive, space-constrained applications across industrial and portable electronics.

FAQ

What is the hFE classification for FJV1845PMTF and how does it affect circuit design?

The FJV1845PMTF carries the 'P' hFE2 classification, specifying a DC current gain range of 200–400 at V_CE = 6 V and I_C = 1 mA. This tight binning reduces gain variation across production units, allowing simplified bias network design without individual transistor trimming. In amplifier circuits using FJV1845PMTF, designers can rely on consistent quiescent current and voltage gain without post-assembly calibration.

Does FJV1845PMTF support operation at elevated ambient temperatures?

Yes, FJV1845PMTF has a maximum junction temperature of 150°C and storage temperature range of –55°C to +150°C. Its power dissipation derates linearly from 300 mW at 25°C to zero at 150°C case temperature. For sustained operation above 75°C ambient, PCB copper area and airflow must be validated to keep T_J within limit; FJV1845PMTF remains functional but requires thermal design verification per application.

Is FJV1845PMTF pin-compatible with other SOT-23 NPN transistors like BC847 or MMBT3904?

FJV1845PMTF uses standard SOT-23 pinout (1=Base, 2=Emitter, 3=Collector), matching BC847, MMBT3904, and most JEDEC-compliant SOT-23 NPN transistors. However, direct substitution requires verification of V_CEO, hFE, and V_CE(sat) requirements-FJV1845PMTF's 120 V rating exceeds BC847 (45 V) and MMBT3904 (40 V), so replacement in high-voltage circuits is not assured without redesign.

What is the typical Cob value of FJV1845PMTF and why does it matter in RF applications?

FJV1845PMTF exhibits Cob = 1.6–2.5 pF at V_CB = 30 V and f = 1 MHz. This low output capacitance minimizes Miller multiplication in common-emitter amplifier stages, preserving bandwidth and reducing phase shift near f_T. In RF front-ends or oscillator buffers using FJV1845PMTF, Cob directly impacts stability margin and achievable gain at frequencies above 10 MHz.

Can FJV1845PMTF be used in linear regulator pass transistor roles?

FJV1845PMTF is not recommended as a linear regulator pass element due to its 50 mA I_C limit and 300 mW P_C rating-insufficient for typical regulator load currents (>100 mA) and dropout/power dissipation demands. While it can source small bias currents in LDO error amplifiers or reference buffers, FJV1845PMTF lacks safe operating area (SOA) data for sustained linear-mode operation and should not replace purpose-built pass transistors.