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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJV1845UMTF

Name: FJV1845UMTF
Brand: onsemi
SKU: FJV1845UMTF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJV1845UMTF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: FJV1845UMTF.pdf

Description:: TRANS NPN 120V 0.05A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJV1845UMTF from ON Semiconductor is an NPN epitaxial silicon small-signal transistor in SOT-23 package, rated for 120 V V_CEO, 50 mA I_C, and 300 mW P_C, with hFE2 classification of 600–1200 at I_C = 1 mA, used in low-power amplification and switching circuits in portable audio and sensor interface modules.

For engineers reviewing the FJV1845UMTF datasheet, pinout, applications, or equivalent options, key selection criteria include its V_CE(sat) ≤ 0.3 V at I_C/I_B = 10 mA/1 mA, f_T ≥ 50 MHz, Cob ≤ 2.5 pF, and SOT-23 footprint compatibility with space-constrained PCB layouts.

Technical Context

The FJV1845UMTF operates as a general-purpose NPN amplifier transistor with DC current gain specified across two test conditions: hFE1 (150–1200 at I_C = 0.1 mA) and hFE2 (600–1200 at I_C = 1 mA), enabling stable biasing in Class-A preamplifier stages and emitter-follower buffers.

Its 120 V collector-base and collector-emitter breakdown ratings support operation in higher-voltage signal chains up to 100 V DC supply rails, while the 50 nA I_CBO and I_EBO ensure low leakage in battery-powered standby modes and precision current mirror configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	120 V - Supports operation in 100 V rail systems without breakdown risk
I_C	50 mA - Suitable for low-current gain stages and LED driver switches
hFE2	600–1200 at V_CE = 6 V, I_C = 1 mA - Enables high-gain, low-base-drive amplifier designs
V_CE(sat)	0.07–0.3 V at I_C = 10 mA, I_B = 1 mA - Minimizes conduction loss in saturated-switch applications
f_T	50–110 MHz - Allows use in RF front-end amplifiers up to ~30 MHz fundamental frequency
C_ob	1.6–2.5 pF at V_CB = 30 V - Limits Miller effect in high-frequency common-emitter stages
P_C	300 mW - Compatible with thermally constrained SOT-23 layouts on 1-oz copper

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; standardized 3-pin configuration optimized for automated placement and reflow soldering on high-density PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased junction; requires current-limited drive to avoid thermal runaway
2	Emitter	Common reference node in common-emitter and common-collector topologies; tied to ground or negative rail
3	Collector	Output current path; connects to load or next stage; handles full I_C and V_CE stress

Key Features

Feature	Design Value
High hFE2 range	600–1200 enables low-base-current bias networks, reducing power in battery-operated sensors
Low V_CE(sat)	≤0.3 V at 10 mA supports efficient switching in logic-level interface and LED driver circuits
High f_T	Up to 110 MHz allows stable amplification in IF stages of AM/FM receivers and ultrasonic transceivers
Low output capacitance	C_ob ≤ 2.5 pF minimizes bandwidth degradation in tuned amplifier and oscillator feedback paths
Complementary pair	Designed as NPN complement to FJV992 (PNP), enabling matched push-pull output stages

Applications

Portable Audio Preamp	Industrial Sensor Interface
Use Scenario: Amplifying weak microphone or piezoelectric sensor signals in handheld voice recorders and IoT environmental monitors. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with fixed-emitter bias. Use Value: High hFE2 ensures >40 dB voltage gain with minimal base drive, preserving battery life in always-on sensing nodes.	Use Scenario: Conditioning analog outputs from pressure, temperature, or proximity sensors before ADC sampling. IC Role / Device Role / Timing Role: Emitter-follower buffer isolating high-impedance sensor elements from downstream circuitry. Use Value: Low V_CE(sat) and 120 V rating allow direct interfacing with 24 V industrial sensor buses without level-shifting.
LED Driver Switch	RF Signal Amplifier
Use Scenario: Driving indicator LEDs or low-power status displays in medical handheld devices and test equipment. IC Role / Device Role / Timing Role: Saturated switch controlling LED anode current with microcontroller GPIO. Use Value: V_CE(sat) ≤ 0.3 V limits power dissipation to <1 mW per LED, eliminating heatsinking in compact enclosures.	Use Scenario: Low-noise amplification of 10–30 MHz IF signals in RFID readers and wireless sensor gateways. IC Role / Device Role / Timing Role: Common-emitter RF amplifier with emitter degeneration for stability. Use Value: f_T ≥ 50 MHz and C_ob ≤ 2.5 pF enable >15 dB gain at 27 MHz with <2 dB noise figure in 50 Ω systems.

Portable Audio Preamp

Industrial Sensor Interface

Use Scenario: Amplifying weak microphone or piezoelectric sensor signals in handheld voice recorders and IoT environmental monitors.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with fixed-emitter bias.

Use Value: High hFE2 ensures >40 dB voltage gain with minimal base drive, preserving battery life in always-on sensing nodes.

Use Scenario: Conditioning analog outputs from pressure, temperature, or proximity sensors before ADC sampling.

IC Role / Device Role / Timing Role: Emitter-follower buffer isolating high-impedance sensor elements from downstream circuitry.

Use Value: Low V_CE(sat) and 120 V rating allow direct interfacing with 24 V industrial sensor buses without level-shifting.

LED Driver Switch

RF Signal Amplifier

Use Scenario: Driving indicator LEDs or low-power status displays in medical handheld devices and test equipment.

IC Role / Device Role / Timing Role: Saturated switch controlling LED anode current with microcontroller GPIO.

Use Value: V_CE(sat) ≤ 0.3 V limits power dissipation to <1 mW per LED, eliminating heatsinking in compact enclosures.

Use Scenario: Low-noise amplification of 10–30 MHz IF signals in RFID readers and wireless sensor gateways.

IC Role / Device Role / Timing Role: Common-emitter RF amplifier with emitter degeneration for stability.

Use Value: f_T ≥ 50 MHz and C_ob ≤ 2.5 pF enable >15 dB gain at 27 MHz with <2 dB noise figure in 50 Ω systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT5551	Lower hFE (80–250), higher V_CEO (160 V), same SOT-23 package	Better suited for higher-voltage switching where gain stability >600 is not required	Choose when V_CEO margin >120 V is critical and gain linearity at low I_C matters more than peak hFE
BC847C	Lower V_CEO (45 V), narrower hFE range (420–800), same pinout	Optimized for 3.3/5 V digital logic interfaces, not high-voltage analog stages	Select for cost-sensitive consumer electronics where 120 V rating is unnecessary and tighter hFE binning is acceptable

Compared with MMBT5551 and BC847C, the FJV1845UMTF delivers superior DC gain consistency above 600 and maintains rated performance up to 120 V, making it preferred for precision analog amplification in industrial and automotive auxiliary systems where both voltage headroom and gain stability are essential.

Availability

FJV1845UMTF is available at Aetrix Electronics and suitable for portable audio preamps, industrial sensor interfaces, LED driver switches, and RF signal amplifiers requiring stable component supply across production lifecycles.

Supply support for FJV1845UMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and sensor solutions for automotive, industrial, and cloud infrastructure markets.

The FJV1845UMTF belongs to ON Semiconductor's legacy Fairchild small-signal transistor portfolio, engineered for high-reliability linear amplification and switching in space- and power-constrained applications.

FAQ

What is the maximum collector-emitter voltage rating for FJV1845UMTF?

The FJV1845UMTF has a maximum collector-emitter voltage (V_CEO) rating of 120 V at T_a = 25°C. This rating remains valid under continuous DC operation within the device's thermal limits and must be derated linearly above 25°C ambient per the published power derating curve. The FJV1845UMTF is not rated for pulsed or avalanche operation beyond this specification.

Does FJV1845UMTF have a defined hFE classification band, and how is it marked?

Yes, the FJV1845UMTF is hFE2-classified with a guaranteed range of 600–1200 at V_CE = 6 V and I_C = 1 mA. The "U" in FJV1845UMTF denotes this hFE2 band per Fairchild's original marking convention; the "6E" laser marking on the SOT-23 package confirms the U-grade binning. This classification is verified per production lot testing.

Can FJV1845UMTF be used as a direct replacement for FJV1845?

Yes, FJV1845UMTF is the updated ON Semiconductor part number for the legacy Fairchild FJV1845, resulting from the underscore-to-dash nomenclature update post-acquisition. Electrical specifications, package dimensions, pinout, and thermal characteristics are identical. The "UMTF" suffix reflects ON Semiconductor's standard tape-and-reel packaging code and does not indicate functional change.

What is the typical base-emitter on voltage for FJV1845UMTF under standard operating conditions?

The typical base-emitter on voltage (V_BE(on)) for FJV1845UMTF is 0.59 V at V_CE = 6 V and I_C = 1 mA, with a guaranteed range of 0.55–0.65 V. This value is measured under DC conditions and applies to forward-active mode operation; it increases slightly under pulsed conditions due to thermal effects but remains within ±5% across the full operating temperature range.

Is FJV1845UMTF RoHS compliant and halogen-free?

Yes, FJV1845UMTF is RoHS compliant and halogen-free per ON Semiconductor's product compliance documentation. It meets JEDEC J-STD-609 Category 1 for bromine and chlorine content (<900 ppm each) and satisfies EU Directive 2011/65/EU requirements. Full material declarations and test reports are available through ON Semiconductor's compliance portal using the FJV1845UMTF part number.

FJV1845UMTF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 50 mA

Voltage - Collector Emitter Breakdown (Max):: 120 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 600 @ 1mA, 6V

Power - Max:: 300 mW

Frequency - Transition:: 110MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

FJV1845UMTF FAQ

1.How can I place an order for FJV1845UMTF through Aetrix?

Please submit a Request for Quotation (RFQ) for FJV1845UMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJV1845UMTF reliable?

The price and inventory of FJV1845UMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJV1845UMTF is usually 5 days.

3.What payment methods are accepted for FJV1845UMTF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJV1845UMTF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJV1845UMTF?

FJV1845UMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJV1845UMTF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJV1845UMTF?

For technical support, including FJV1845UMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJV1845UMTF requirements.

6.How does Aetrix verify that FJV1845UMTF is sourced from the original manufacturer or authorized distributors?

All FJV1845UMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJV1845UMTF meets industry standards.

7.What is the process for return or replacement of FJV1845UMTF?

All FJV1845UMTF units undergo pre-shipment inspection (PSI). If there is an issue with FJV1845UMTF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJV1845UMTF part is unused and in its original packaging.

Return procedure for FJV1845UMTF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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