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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJX1182YTF

Name: FJX1182YTF
Brand: onsemi
SKU: FJX1182YTF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJX1182YTF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: FJX1182YTF.pdf

Description:: TRANS PNP 30V 0.5A SOT-323

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJX1182YTF from ON Semiconductor is a PNP epitaxial silicon transistor designed for low-frequency power amplification, with V_CEO = −30 V, I_C = −500 mA, P_C = 150 mW, h_FE (min) = 70 at −100 mA, and f_T = 200 MHz - used in audio preamplifier stages and relay driver circuits.

For engineers reviewing the FJX1182YTF datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE classification (Y-grade: 120–240), SOT-323 package thermal performance, V_CE(sat) ≤ −0.25 V at −100 mA/−10 mA drive, and Cob = 13 pF at −6 V for stable low-frequency gain control.

Technical Context

This PNP bipolar junction transistor operates in linear amplification mode with fixed DC biasing, supporting Class-A or Class-AB configurations. Its −30 V V_CEO rating and −500 mA I_C capability enable use in medium-current switching and analog signal buffering where complementary NPN devices are unavailable or mismatched.

The device features a low-output capacitance (Cob = 13 pF) and high f_T (200 MHz), indicating optimized minority-carrier transport for bandwidth-limited audio and industrial control feedback paths - not intended for RF or switching-mode power supply applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V: Maximum safe collector-emitter voltage under open-base conditions; defines headroom for rail-to-rail swing in single-supply amplifier designs.
I_C	−500 mA: Continuous collector current limit; supports relay coil drivers and small-signal power stages without forced-air cooling.
h_FE (Y-grade)	120–240 at −400 mA: Tight DC current gain spread ensures predictable base drive requirements across production lots.
V_CE(sat)	≤ −0.25 V at −100 mA/−10 mA: Low saturation voltage minimizes power loss and self-heating in switching applications.
f_T	200 MHz: Unity-gain frequency confirms usable bandwidth up to ~20 MHz for small-signal amplification with stable phase margin.
Cob	13 pF at −6 V: Output capacitance limits high-frequency roll-off and affects stability in multi-stage feedback networks.
P_C	150 mW at T_A = 25°C: Power dissipation ceiling requires derating above 25°C ambient; compatible with PCB copper pour for thermal management.

Pinout & Package

SOT-323 (SC-70) 3-pin surface-mount package with gull-wing leads; 2.10 mm × 1.25 mm footprint, 0.95 mm height, and 0.65 mm lead pitch - optimized for space-constrained consumer and industrial PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Current-controlled input terminal	Receives forward-biased base current to modulate collector current; requires series resistor for stable biasing in linear operation.
2 (Emitter)	Common reference terminal	Connected to higher-potential rail in PNP configuration; serves as current source output node in emitter-follower topologies.
3 (Collector)	Output current terminal	Delivers amplified or switched current to load; polarity must be reversed relative to NPN layouts in schematic capture.

Key Features

Feature	Design Value
Y-grade h_FE binning	Guaranteed 120–240 h_FE at −400 mA enables consistent gain matching in dual-transistor amplifier pairs.
Low V_CE(sat)	−0.25 V max reduces conduction loss by >40% vs. standard general-purpose PNP transistors at same current.
High f_T	200 MHz allows stable operation up to 20 MHz with <3 dB gain flatness - suitable for wideband audio and instrumentation amplifiers.
SOT-323 thermal resistance	Junction-to-ambient R_θJA ≈ 350°C/W enables 150 mW dissipation with <50°C rise on 1-in² 1-oz copper pad.
Low Cob	13 pF output capacitance minimizes Miller effect in common-emitter configurations, preserving bandwidth in multi-stage designs.

Applications

Audio Preamp Stage	Relay Driver Circuit
Use Scenario: Amplifying microphone-level signals (−40 dBV) before ADC sampling in portable voice recorders. IC Role / Device Role / Timing Role: PNP common-emitter voltage amplifier providing 20 dB mid-band gain with DC-coupled bias network. Use Value: Y-grade h_FE ensures consistent gain across units; low V_CE(sat) prevents clipping near negative rail in single-supply operation.	Use Scenario: Driving 12 V, 80 mA electromagnetic relay coils in HVAC control panels. IC Role / Device Role / Timing Role: Saturated-switch PNP transistor sinking relay coil current when microcontroller GPIO pulls base low. Use Value: −0.25 V V_CE(sat) limits coil voltage drop to ≤0.25 V, ensuring ≥11.75 V across relay for reliable pull-in at end-of-life.
DC Motor Speed Control	Industrial Sensor Interface
Use Scenario: Linear current regulation for 3 V, 200 mA brushed DC motors in medical infusion pumps. IC Role / Device Role / Timing Role: Emitter-follower configured as adjustable current source controlled by DAC output. Use Value: 150 mW power rating supports continuous 200 mA at 0.75 V drop; h_FE stability ensures repeatable current setpoint accuracy.	Use Scenario: Level-shifting and buffering 0–5 V analog outputs from temperature sensors to PLC analog inputs. IC Role / Device Role / Timing Role: PNP emitter-follower providing rail-to-rail output swing and high input impedance. Use Value: Low Cob (13 pF) prevents phase lag in 10 kHz sensor signal paths; SOT-323 footprint fits dense industrial I/O module layouts.

Audio Preamp Stage

Relay Driver Circuit

Use Scenario: Amplifying microphone-level signals (−40 dBV) before ADC sampling in portable voice recorders.

IC Role / Device Role / Timing Role: PNP common-emitter voltage amplifier providing 20 dB mid-band gain with DC-coupled bias network.

Use Value: Y-grade h_FE ensures consistent gain across units; low V_CE(sat) prevents clipping near negative rail in single-supply operation.

Use Scenario: Driving 12 V, 80 mA electromagnetic relay coils in HVAC control panels.

IC Role / Device Role / Timing Role: Saturated-switch PNP transistor sinking relay coil current when microcontroller GPIO pulls base low.

Use Value: −0.25 V V_CE(sat) limits coil voltage drop to ≤0.25 V, ensuring ≥11.75 V across relay for reliable pull-in at end-of-life.

DC Motor Speed Control

Industrial Sensor Interface

Use Scenario: Linear current regulation for 3 V, 200 mA brushed DC motors in medical infusion pumps.

IC Role / Device Role / Timing Role: Emitter-follower configured as adjustable current source controlled by DAC output.

Use Value: 150 mW power rating supports continuous 200 mA at 0.75 V drop; h_FE stability ensures repeatable current setpoint accuracy.

Use Scenario: Level-shifting and buffering 0–5 V analog outputs from temperature sensors to PLC analog inputs.

IC Role / Device Role / Timing Role: PNP emitter-follower providing rail-to-rail output swing and high input impedance.

Use Value: Low Cob (13 pF) prevents phase lag in 10 kHz sensor signal paths; SOT-323 footprint fits dense industrial I/O module layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	V_CEO = −40 V, I_C = −200 mA, h_FE = 100–300 (no grade binning), f_T = 250 MHz	Lower I_C rating limits use to ≤150 mA loads; higher f_T offers no benefit in audio/relay apps.	Select when higher voltage margin is needed but current demand is ≤150 mA and gain consistency is secondary.
DXT3906-7-F	V_CEO = −40 V, I_C = −500 mA, h_FE = 100–300 (no Y-grade), P_C = 310 mW, SOT-563 package	Larger SOT-563 footprint; higher power rating but no guaranteed h_FE binning or low V_CE(sat) spec.	Choose for higher-power relay drivers where board space permits larger package and tighter h_FE is not required.

Compared with MMBT3906LT1G and DXT3906-7-F, the FJX1182YTF uniquely delivers Y-grade h_FE (120–240) with −500 mA I_C and −0.25 V V_CE(sat) in SOT-323 - enabling compact, thermally efficient, and gain-stable designs where both current drive and parameter consistency matter.

Availability

FJX1182YTF is available at Aetrix Electronics and suitable for audio preamplifier stages, relay driver circuits, and industrial sensor interfaces requiring stable component supply, consistent h_FE binning, and SOT-323 footprint compatibility.

Supply support for FJX1182YTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The FJX1182YTF belongs to ON Semiconductor's legacy Fairchild PNP transistor portfolio, engineered for low-frequency linear amplification and medium-current switching in cost-sensitive, space-constrained applications.

FAQ

What is the guaranteed h_FE range for FJX1182YTF?

The FJX1182YTF is Y-grade binned with a guaranteed DC current gain (h_FE) of 120–240 at V_CE = −6 V and I_C = −400 mA. This tight specification ensures predictable base drive requirements and gain stability across production units - critical for matched-pair amplifier designs and precision current sources where FJX1182YTF is deployed.

Does FJX1182YTF support switching applications?

Yes, FJX1182YTF supports switching applications such as relay and LED drivers due to its −0.25 V maximum V_CE(sat) at −100 mA/−10 mA and −500 mA I_C rating. Its SOT-323 package provides adequate thermal dissipation for intermittent duty cycles; however, continuous switching above 100 mA requires PCB thermal relief per ON Semiconductor's recommended layout for FJX1182YTF.

What is the maximum operating temperature for FJX1182YTF?

The FJX1182YTF has a maximum junction temperature (T_J) of 150°C and storage temperature range of −55°C to +150°C. At ambient temperatures above 25°C, power dissipation must be linearly derated - e.g., at 75°C ambient, maximum allowable P_C drops to ~75 mW. Thermal design using FJX1182YTF should reference its SOT-323 package thermal resistance data in the official ON Semiconductor datasheet.

Is FJX1182YTF pin-compatible with other SOT-323 PNP transistors?

FJX1182YTF uses standard SOT-323 pinout (1=Base, 2=Emitter, 3=Collector), matching industry convention for PNP devices in this package. However, electrical parameters - especially h_FE grading, V_CE(sat), and Cob - differ significantly from generic SOT-323 PNPs; direct substitution requires validation of gain, saturation voltage, and bandwidth requirements in the target circuit using FJX1182YTF.

Where can I find the official FJX1182YTF datasheet?

The official FJX1182YTF datasheet is published by ON Semiconductor and hosted at www.onsemi.com under document number FJX1182-D. It includes absolute maximum ratings, detailed electrical characteristics across temperature, typical performance curves, package dimensions, and application guidance specific to FJX1182YTF - essential for design-in, thermal modeling, and compliance verification.

FJX1182YTF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 100mA, 1V

Power - Max:: 150 mW

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

FJX1182YTF FAQ

1.How can I place an order for FJX1182YTF through Aetrix?

Please submit a Request for Quotation (RFQ) for FJX1182YTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJX1182YTF reliable?

The price and inventory of FJX1182YTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJX1182YTF is usually 5 days.

3.What payment methods are accepted for FJX1182YTF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJX1182YTF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJX1182YTF?

FJX1182YTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJX1182YTF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJX1182YTF?

For technical support, including FJX1182YTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJX1182YTF requirements.

6.How does Aetrix verify that FJX1182YTF is sourced from the original manufacturer or authorized distributors?

All FJX1182YTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJX1182YTF meets industry standards.

7.What is the process for return or replacement of FJX1182YTF?

All FJX1182YTF units undergo pre-shipment inspection (PSI). If there is an issue with FJX1182YTF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJX1182YTF part is unused and in its original packaging.

Return procedure for FJX1182YTF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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