Infineon Technologies FM1608B-SG

Overview

FM1608B-SG from Cypress Semiconductor is a 64-Kbit (8 K × 8) parallel-interface ferroelectric RAM (F-RAM) memory with nonvolatile data retention, 70-ns access time, 10¹⁴ read/write endurance, and industrial temperature range (–40 °C to +85 °C). It functions as a drop-in replacement for SRAM or EEPROM in real-time data logging, metering, and control systems requiring frequent writes without delay.

For engineers reviewing the FM1608B-SG datasheet, FM1608B-SG pinout, FM1608B-SG application, or FM1608B-SG equivalent, key selection criteria include its NoDelay™ write capability, identical read/write cycle timing, CE-controlled address latching, 28-pin SOIC package compatibility, and absence of battery or write-polling overhead.

Technical Context

The FM1608B-SG implements a bytewide parallel interface with 13 address lines (A12–A0) and 8 bidirectional data lines (DQ7–DQ0), requiring a falling edge on CE to latch address and initiate each memory cycle. Its F-RAM core enables true nonvolatility without backup power or write latency.

Unlike SRAM, it mandates CE strobing per access to trigger internal pre-charge and address capture; unlike EEPROM, it eliminates write-ready polling and supports 150,000 row-level writes per second sustained over 20+ years. All operations occur within a single bus cycle with matched 70-ns access and 130-ns cycle times for reads and writes.

Key Specifications

Pinout & Package

FM1608B-SG is housed in a 28-pin small outline integrated circuit (SOIC) package with gull-wing leads, RoHS-compliant, and designed for surface-mount reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.

Compared with CY14B108L-SXIT and IS61LV5128-10TLI, FM1608B-SG delivers monolithic nonvolatility in the same 28-pin SOIC footprint as legacy SRAMs, eliminating backup components while sustaining 10¹⁴ writes-making it optimal for cost-sensitive, high-reliability, and space-constrained upgrades.

Availability

FM1608B-SG is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, automotive body control modules, and medical infusion pumps requiring stable component supply and long-term lifecycle assurance.

Supply support for FM1608B-SG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for industrial, automotive, and IoT applications, with expertise in nonvolatile memory and programmable systems.

The FM1608B-SG belongs to Cypress's F-RAM product line, engineered specifically to replace battery-backed SRAM and EEPROM in applications demanding rapid, unlimited, and deterministic nonvolatile writes.

FAQ

Does FM1608B-SG require external hardware for nonvolatility?

No. FM1608B-SG is monolithic nonvolatile memory using ferroelectric technology-no battery, capacitor, or supervisory IC is needed. Data retention is guaranteed for 151 years at +85 °C solely from the die structure, eliminating backup power design complexity and field failure modes associated with aging batteries or leakage capacitors.

Can FM1608B-SG be used as a direct replacement for a 28-pin 8 K × 8 SRAM?

Yes-FM1608B-SG uses the industry-standard 28-pin SOIC pinout and electrical interface of 8 K × 8 SRAMs. However, CE must be actively strobed (falling edge per access) rather than held low, and OE must be controlled to avoid bus contention. No changes to data/address bus wiring are required.

What happens if CE remains low beyond the maximum specified duration?

Exceeding t_CEMAX (maximum CE LOW time) risks incomplete pre-charge and potential data corruption. The device requires CE to go HIGH for ≥t_PC (pre-charge time) before the next falling edge. Continuous CE assertion violates internal timing and may cause invalid reads or failed writes-controller firmware must enforce CE HIGH intervals between cycles.

Is FM1608B-SG compatible with 3.3-V systems?

No. FM1608B-SG operates strictly at 4.5 V to 5.5 V and is not 3.3-V tolerant. Connecting to a 3.3-V bus without level translation will result in incorrect logic levels, failed writes, or permanent damage. For 3.3-V systems, consider Cypress's 3.3-V F-RAM variants like CY14B101Q2A, which use different pinouts and voltage domains.