Infineon Technologies FM16W08-SG

Overview

FM16W08-SG from Cypress Semiconductor is a 64-Kbit (8 K × 8) parallel-interface ferroelectric RAM (F-RAM) with nonvolatile data retention, 70-ns access time, 2.7–5.5 V wide supply voltage, and industrial temperature range (–40 °C to +85 °C). It functions as a drop-in replacement for SRAM in systems requiring frequent rapid writes without battery backup, such as real-time data logging in industrial controllers.

For engineers reviewing the FM16W08-SG datasheet, FM16W08-SG pinout, FM16W08-SG application, or FM16W08-SG equivalent, key selection criteria include NoDelay™ write capability, 10¹⁴ read/write endurance, 151-year data retention, SRAM-compatible timing and pinout, and 28-pin SOIC package compatibility with legacy memory layouts.

Technical Context

The FM16W08-SG implements a bytewide parallel interface with address latching on the falling edge of CE, requiring explicit pre-charge (CE HIGH) between cycles-unlike standard SRAM. Its F-RAM core enables true nonvolatility without write delay or polling, with identical 70-ns read and write access times and 130-ns cycle time.

Memory architecture is organized as 8,192 × 8 bits across a 1024-row × 8-byte array; each row endurance is shared across 8 consecutive bytes (A0–A2), making row-aware data placement critical for maximizing lifetime. All operations are guaranteed over –40 °C to +85 °C with RoHS-compliant 28-pin SOIC packaging.

Key Specifications

Pinout & Package

FM16W08-SG is housed in a 28-pin Small Outline Integrated Circuit (SOIC) package with 300-mil body width, surface-mount compatible, RoHS-compliant, and rated for industrial temperature operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B108L-SXIT and AT28HC64B-15PU, FM16W08-SG uniquely delivers SRAM-speed nonvolatility in a pin-compatible 28-pin SOIC, eliminating interface translation and endurance bottlenecks inherent in serial or EEPROM alternatives.

Availability

FM16W08-SG is available at Aetrix Electronics and suitable for industrial data loggers, smart metering systems, PLC I/O modules, and medical diagnostic recorders requiring stable component supply and long-term lifecycle assurance.

Supply support for FM16W08-SG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable system-on-chip solutions for industrial, automotive, and IoT applications.

The FM16W08-SG belongs to Cypress's F-RAM product line, engineered specifically to replace battery-backed SRAM and EEPROM in systems demanding instant-write nonvolatility, extreme endurance, and robust operation across wide voltage and temperature ranges.

FAQ

Is FM16W08-SG pin-compatible with standard 8 K × 8 SRAMs like IS61LV256AL?

Yes - FM16W08-SG uses an industry-standard 28-pin SOIC footprint and identical A0–A12, DQ0–DQ7, CE, OE, WE, VDD, and VSS signal mapping. However, it requires CE strobing (falling edge latching) and pre-charge (CE HIGH between cycles), unlike most SRAMs with static CE enable.

Does FM16W08-SG require external hardware for nonvolatility, such as a battery or capacitor?

No - FM16W08-SG is monolithic nonvolatile memory based on ferroelectric technology. It retains data without any external energy source, eliminating batteries, supercapacitors, charge pumps, or associated support circuitry and their associated reliability risks.

What is the minimum VDD required to guarantee reliable write operation?

FM16W08-SG requires VDD ≥ 2.7 V during active write cycles. Below this threshold, write operations are not guaranteed and may result in data corruption. System design must ensure CE remains HIGH (inactive) until VDD stabilizes above 2.7 V at power-up and stays above that level throughout write execution.

Can FM16W08-SG be used in place of EEPROM in existing designs?

Yes, but only where timing and interface match: FM16W08-SG offers faster, more reliable replacement for parallel EEPROMs (e.g., AT28HC64B) due to its 70-ns access vs. 150-µs EEPROM writes and 10¹⁴ vs. 10⁵ endurance. It is not a drop-in for serial EEPROMs or those with different pinouts or command protocols.