Infineon Technologies FM16W08-SGTR

Overview

FM16W08-SGTR from Cypress Semiconductor is a 64-Kbit (8 K × 8) parallel-interface ferroelectric RAM (F-RAM) with nonvolatile data retention, 70-ns access time, 2.7–5.5 V wide supply voltage, and industrial temperature range (–40 °C to +85 °C). It functions as a byte-wide memory in embedded systems requiring frequent rapid writes without write delays or battery backup.

For engineers reviewing the FM16W08-SGTR datasheet, FM16W08-SGTR pinout, FM16W08-SGTR application, or FM16W08-SGTR equivalent, key selection criteria include NoDelay™ write capability, 10¹⁴ read/write endurance, SRAM-compatible timing and pinout, and monolithic nonvolatility for harsh-environment data logging and real-time control.

Technical Context

The FM16W08-SGTR uses ferroelectric capacitor-based memory cells enabling true nonvolatility with zero write latency and no erase cycles. Its operation requires CE falling edge to latch address and initiate each memory cycle-unlike standard SRAM-enabling address bus changes post-latch while maintaining timing predictability.

It supports both CE-controlled and WE-controlled write modes, with identical 70-ns read/write access times and 130-ns cycle time. Internal pre-charge is triggered by CE HIGH, and all operations remain valid across full industrial VDD (2.7–5.5 V) and temperature (–40 °C to +85 °C) ranges.

Key Specifications

Pinout & Package

FM16W08-SGTR is housed in a 28-pin Small Outline Integrated Circuit (SOIC) package with gull-wing leads, RoHS-compliant, surface-mount compatible, and rated for industrial reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B108L-SXIT and IS62WV5128BLL-55MLI, FM16W08-SGTR uniquely delivers parallel-byte nonvolatility at SRAM speed without backup components or interface redesign-making it optimal for retrofitting legacy systems where board space, reliability, and write frequency are critical.

Availability

FM16W08-SGTR is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, and automotive body control modules requiring stable component supply, long-term lifecycle support, and guaranteed RoHS compliance.

Supply support for FM16W08-SGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer applications.

The FM16W08-SGTR belongs to Cypress's F-RAM product line, engineered to replace battery-backed SRAM and EEPROM in high-write-cycle, mission-critical nonvolatile storage applications where reliability, speed, and simplicity are essential.

FAQ

What is the minimum VDD required to guarantee reliable write operation?

The FM16W08-SGTR requires VDD ≥ 2.7 V for all specified read/write operations, including write completion and data retention. Below this threshold, internal ferroelectric polarization switching becomes unreliable, risking data corruption. The device does not implement brownout protection or write inhibit-system-level reset supervision is required to hold CE HIGH during power ramp-down.

Can FM16W08-SGTR be used as a direct pin-for-pin replacement for standard SRAMs like IS61LV25616AL?

Yes-FM16W08-SGTR shares the same 28-pin SOIC package, 8 K × 8 organization, and industry-standard pinout (A0–A12, DQ0–DQ7, CE, OE, WE, VDD, VSS). However, CE must be actively strobed (not held LOW), and timing margins require validation against the 70-ns access and 130-ns cycle specs-not just pin mapping.

Does FM16W08-SGTR require special PCB layout considerations compared to EEPROM or Flash?

No special high-frequency routing is needed, but CE and WE pins must include 10–100 kΩ pull-up resistors to VDD to prevent unintended writes during power-up/down. Ground plane integrity and decoupling (0.1 µF ceramic near VDD/VSS) are critical-ferroelectric switching generates transient currents that can couple into analog sections if poorly bypassed.

How does endurance scaling work across the 8 K address space?

Endurance is row-based: each 8-byte boundary (A0–A2 = 000) defines a 64-bit row. Every read or write to any byte in a row consumes one endurance cycle for the entire row. To maximize lifetime, distribute frequently updated variables across non-adjacent 8-byte boundaries-e.g., store counter LSB at 0x0000 and MSB at 0x0008 rather than 0x0000 and 0x0001.