Infineon Technologies FM1808B-SGTR

Overview

FM1808B-SGTR from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) parallel-interface ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention at +85 °C. It functions as a nonvolatile SRAM replacement in real-time data logging, industrial control registers, and metering event buffers where rapid, reliable byte-level writes are required without write latency or wear leveling.

For engineers reviewing the FM1808B-SGTR datasheet, FM1808B-SGTR pinout, FM1808B-SGTR application, or FM1808B-SGTR equivalent, key selection criteria include its 70-ns access time, CE-controlled address latching, 4.5–5.5 V operation, industrial temperature range (–40 °C to +85 °C), and compatibility with standard 28-pin SOIC-based SRAM/EEPROM footprints.

Technical Context

The FM1808B-SGTR implements a true bytewide parallel F-RAM array organized as 32,768 × 8, with all memory operations initiated on the falling edge of Chip Enable (CE). Unlike EEPROM or flash, it requires no internal write cycle delay - data becomes nonvolatile immediately upon completion of the bus cycle.

Its architecture uses ferroelectric capacitors for storage, enabling symmetric 70-ns read/write access times and eliminating polling or erase-before-write sequences. The device mandates CE strobing for every access to latch address and trigger internal pre-charge, distinguishing it from conventional SRAM timing behavior.

Key Specifications

Pinout & Package

FM1808B-SGTR is housed in a 28-pin small outline integrated circuit (SOIC) package with standard 300-mil body width and 1.27 mm pitch. Pin numbering follows JEDEC MS-012, top-view orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with IS61LV256AL-10TLI and AT28C256-15PU, the FM1808B-SGTR uniquely delivers nonvolatility, 10¹⁴ endurance, and bus-speed writes in a single monolithic SOIC package - removing backup components, firmware overhead, and timing uncertainty from system design.

Availability

FM1808B-SGTR is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, programmable logic controllers, and portable medical diagnostics requiring stable component supply across multi-year production lifecycles.

Supply support for FM1808B-SGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and memory solutions with emphasis on reliability and industrial longevity.

The FM1808B-SGTR belongs to Infineon's F-RAM product line, engineered specifically for mission-critical nonvolatile data storage in harsh environments where battery-free operation, extreme endurance, and deterministic timing are mandatory.

FAQ

Does FM1808B-SGTR require external hardware for nonvolatility?

No. The FM1808B-SGTR achieves intrinsic nonvolatility through its ferroelectric memory cell structure - no battery, supercapacitor, or external backup circuitry is needed. Data remains intact for 151 years at +85 °C after power removal, verified per JEDEC JESD22-A117 reliability testing.

Can FM1808B-SGTR be used as a direct replacement for standard SRAMs without timing changes?

It can replace SRAMs in most cases, but requires CE strobing on every access - unlike SRAM, CE cannot be held permanently LOW. Address setup and hold times relative to CE falling edge must meet tAS = 15 ns and tAH = 15 ns. Cycle time remains identical at 130 ns, preserving controller compatibility.

What is the significance of the NC pin (Pin 26) on FM1808B-SGTR?

Pin 26 is labeled A12 in the pinout diagram but is internally unconnected (NC) in the FM1808B-SGTR. It must not be driven or pulled - leaving it floating is acceptable, though tying to VSS improves noise immunity in high-EMI environments per Infineon's layout guidelines.

How does FM1808B-SGTR handle power-down sequences to prevent data corruption?

The device does not block writes below VDD min, so system-level protection is required. Best practice is to assert CE HIGH and hold processor in reset during power ramp-down. A pull-up resistor on CE ensures it tracks VDD and goes HIGH before VDD falls below 4.5 V, preventing partial writes during brownout conditions.