Infineon Technologies FM18W08-SGTR

Overview

FM18W08-SGTR from Cypress Semiconductor is a 256-Kbit (32 K × 8) parallel-interface ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It operates across 2.7–5.5 V, delivers 70-ns access time, and replaces battery-backed SRAM in industrial logging, metering, and real-time event capture systems.

For engineers reviewing the FM18W08-SGTR datasheet, FM18W08-SGTR pinout, FM18W08-SGTR application, or FM18W08-SGTR equivalent, key selection criteria include write-cycle timing equivalence to SRAM, CE-controlled address latching, industrial temperature support (–40 °C to +85 °C), and RoHS-compliant 28-pin SOIC packaging.

Technical Context

The FM18W08-SGTR implements a bytewide parallel interface with CE-latched addressing and dual-mode write control (CE- or WE-triggered). Its F-RAM core enables true nonvolatility without write delay or polling, matching SRAM timing for both read and write cycles (130-ns cycle time).

Internally organized as 32,768 × 8, it uses a ferroelectric capacitor array with row-based endurance accounting (64-bit rows); each access affects an entire row, requiring layout-aware data placement for optimal longevity. Pre-charge is initiated by CE going HIGH, enforcing strict t_PC timing between cycles.

Key Specifications

Pinout & Package

FM18W08-SGTR is housed in a 28-pin Small Outline Integrated Circuit (SOIC) package with standard surface-mount footprint and RoHS-compliant finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.

Compared with CY14B108L-ZSP25XI and AS6C3208-70ZIN, FM18W08-SGTR uniquely balances drop-in SRAM compatibility, industrial temperature robustness, monolithic reliability, and ultra-high endurance-making it optimal for long-life, maintenance-free embedded systems.

Availability

FM18W08-SGTR is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, medical device audit trails, and automotive black-box recording requiring stable component supply across extended product lifecycles.

Supply support for FM18W08-SGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability nonvolatile memory and programmable system-on-chip solutions for industrial, automotive, and IoT applications.

The FM18W08 belongs to Cypress's F-RAM product line, engineered specifically to replace battery-backed SRAM and legacy EEPROM in applications demanding rapid, unlimited, and deterministic nonvolatile writes.

FAQ

What is the minimum CE pulse width required for a valid read or write cycle?

The FM18W08-SGTR requires a minimum CE LOW time of 130 ns to complete a full memory cycle, matching its rated cycle time. This ensures sufficient time for address latching, memory access, and internal pre-charge initiation. Violating this spec may result in incomplete writes or invalid read data, especially under worst-case voltage and temperature conditions.

Can FM18W08-SGTR be used with a microcontroller that drives CE continuously LOW?

No-CE must transition LOW-to-HIGH between cycles to initiate mandatory pre-charge. Holding CE LOW indefinitely violates the maximum CE LOW time specification and causes internal state corruption. The controller must generate discrete CE strobes synchronized to each memory access, unlike conventional SRAM interfaces.

Does FM18W08-SGTR require external pull-up resistors on CE and WE pins?

Yes-Cypress recommends pull-up resistors on both CE and WE to ensure they track VDD during power-up/down and remain HIGH when MCU pins are tristated. This prevents unintended writes or address latching during brown-out conditions, which could corrupt memory contents.

How does FM18W08-SGTR handle simultaneous read and write requests?

The FM18W08-SGTR does not support concurrent operations-it is a single-port parallel memory. Read and write cycles are mutually exclusive and controlled by CE, WE, and OE timing. Attempting overlapping cycles results in undefined behavior; proper sequencing via the memory controller is required per the functional truth table.