Infineon Technologies FM21LD16-60-BGTR

Overview

FM21LD16-60-BGTR from Cypress Semiconductor is a 2-Mbit (128 K × 16) ferroelectric RAM (F-RAM) with SRAM-compatible parallel interface, 60-ns access time, 10¹⁴ read/write endurance, and 151-year data retention. It operates from 2.7 V to 3.6 V across –40 °C to +85 °C and is packaged in a 48-ball FBGA for industrial nonvolatile memory applications requiring rapid, reliable writes without delay.

For engineers reviewing the FM21LD16-60-BGTR datasheet, FM21LD16-60-BGTR pinout, FM21LD16-60-BGTR application, or FM21LD16-60-BGTR equivalent, key selection criteria include NoDelay™ write timing, software-configurable block-level write protection, byte-select capability via UB/LB, industrial temperature support, and drop-in compatibility with standard 128 K × 16 SRAM layouts.

Technical Context

The FM21LD16-60-BGTR implements a parallel-interface F-RAM core using ferroelectric capacitor-based storage cells, enabling true nonvolatility with SRAM-like timing. Its architecture supports both CE- and WE-controlled read/write cycles, page-mode operation with 30-ns cycle time, and automatic pre-charge on CE high or upper-address change.

It integrates a low-voltage monitor that blocks memory access below V_DD(min), plus software write-protection logic that divides the 128 K × 16 array into eight 16 K × 16 blocks-each individually protected via a six-read/three-write address/command sequence targeting DQ_7–0.

Key Specifications

Pinout & Package

FM21LD16-60-BGTR is housed in a 48-ball fine-pitch ball grid array (FBGA) package with 0.8 mm pitch, designed for high-density PCB layouts and automated assembly. Pin assignments follow industry-standard 128 K × 16 SRAM footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.

Compared with FM22LD16-60-BGTR and FM23MLD16-60-BGTR, the FM21LD16-60-BGTR offers optimal cost-performance balance for 2-Mbit use cases - delivering full F-RAM benefits without over-provisioning memory capacity or increasing PCB area.

Availability

FM21LD16-60-BGTR is available at Aetrix Electronics and suitable for industrial data logging, smart metering, automotive telematics, and medical device event history applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for FM21LD16-60-BGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and IoT applications, with emphasis on robustness, low-power operation, and system-level integration.

The FM21LD16 belongs to Cypress's F-RAM product line, engineered specifically to replace battery-backed SRAM and legacy EEPROM in applications demanding infinite endurance, instant writes, and monolithic reliability without external components.

FAQ

Is FM21LD16-60-BGTR truly pin-compatible with standard 128 K × 16 SRAMs?

Yes. The FM21LD16-60-BGTR uses an industry-standard 48-ball FBGA footprint matching common 128 K × 16 SRAMs, including identical A16–A0, DQ15–DQ0, CE, WE, OE, UB, LB, VDD, and VSS pin assignments. No PCB redesign is needed for drop-in replacement.

How does the software write-protection mechanism prevent accidental corruption?

Protection requires a precise six-read address sequence (12555h, 1DAAAh, 01333h, 0ECCCh, then two more), followed by a write of the protection byte and its complement to DQ7–DQ0. Any deviation resets the state machine - ensuring unintentional writes cannot alter sector lock status.

What happens during power loss below VDD(min)?

The integrated low-voltage monitor disables all memory access when VDD drops below the specified minimum threshold. This prevents partial writes and data corruption by blocking CE, WE, and OE functionality until supply stabilizes - a hardware-enforced safeguard not dependent on firmware.

Can FM21LD16-60-BGTR operate in page mode across block boundaries?

No. Page mode is restricted to four column locations (A1–A0) within the same physical row. Crossing row boundaries - whether within a block or between blocks - requires CE reassertion or upper-address (A16–A2) change, triggering pre-charge and resetting page mode context.