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Infineon Technologies FM22L16-55-TG
- Part No.:
- FM22L16-55-TG
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
FM22L16-55-TG.pdf
- Description:
- IC FRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,140
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Product details
Overview
FM22L16-55-TG from Infineon Technologies (formerly Cypress) is a 4-Mbit parallel-interface ferroelectric RAM (F-RAM) organized as 256K × 16, configurable as 512K × 8 via UB/LB controls. It delivers NoDelay™ writes, 100 trillion (10¹⁴) read/write endurance, 151-year data retention, and 55-ns access time. It serves as a drop-in nonvolatile replacement for industrial SRAM in real-time data logging systems requiring frequent, deterministic writes without backup batteries.
For engineers reviewing the FM22L16-55-TG datasheet, FM22L16-55-TG pinout, FM22L16-55-TG application, or FM22L16-55-TG equivalent, key selection criteria include its SRAM-compatible timing, software-configurable block write protection, TSOP-II package compatibility, and guaranteed operation across –40 °C to +85 °C with VDD = 2.7–3.6 V.
Technical Context
The FM22L16-55-TG implements a monolithic ferroelectric memory array with eight 32K × 16 blocks, each independently software write-protectable using a nonvolatile 6-read/3-write address/command sequence. Its internal low-voltage monitor disables memory access when VDD drops below 2.7 V, preventing data corruption.
It supports both CE- and WE-controlled parallel write cycles with identical 55-ns access and 110-ns cycle times for reads and writes. Page mode enables 25-ns cycle access to four column locations per row (A1–A0), and sleep mode reduces current to ≤5 μA via the ZZ pin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16), configurable as 512K × 8 using UB/LB pins |
| Access Time | 55 ns - matches standard SRAM timing for seamless drop-in replacement |
| Endurance | 10¹⁴ read/write cycles - eliminates wear-out concerns in high-frequency logging |
| Data Retention | 151 years at +85 °C - ensures long-term nonvolatility without refresh or backup power |
| Supply Voltage | 2.7 V to 3.6 V - compatible with modern 3.3 V industrial logic rails |
| Operating Temp | –40 °C to +85 °C - qualified for extended industrial environments |
| Active Current | 8 mA (typ) - enables low-power embedded operation during active memory access |
Pinout & Package
FM22L16-55-TG is housed in a 44-pin thin small outline package (TSOP-II, 400-mil width), surface-mount compatible with standard reflow profiles and IPC-7351 design rules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A17–A0 | Address Inputs | 18-bit address bus latched on CE falling edge; A1–A0 enable page-mode column access |
| DQ15–DQ0 | Data I/O Bus | 16-bit bidirectional data path; UB/LB control byte-level directionality |
| CE | Chip Enable | Falling-edge-triggered memory access initiator; latches full address and enables page mode |
| WE | Write Enable | Rising edge commits write data; falling edge latches new column address in page mode |
| OE | Output Enable | Controls DQ bus drive; HI-Z when HIGH to prevent bus contention and reduce supply transients |
| UB / LB | Byte Select | Enable upper (DQ15–DQ8) or lower (DQ7–DQ0) data byte; may be tied LOW if unused |
| ZZ | Sleep Control | LOW enters ultra-low-power sleep mode (≤5 μA); must be HIGH for normal operation |
| VDD / VSS | Power / Ground | 2.7–3.6 V supply with internal voltage monitor; VSS referenced to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ Writes | Immediate nonvolatile storage on rising WE edge - no wait states, polling, or write buffers required |
| Software Block Write-Protect | Eight 32K × 16 sectors individually protected via nonvolatile command sequence - no external hardware or fuses needed |
| SRAM Pin & Timing Compatibility | Industry-standard 256K × 16 parallel interface with 55-ns access - direct PCB-level replacement for AS6C4008/IS61LV25616 |
| Monolithic Nonvolatility | Eliminates battery, capacitor, or EEPROM backup - removes rework, moisture sensitivity, and shock/vibration failure modes |
| Low-Power Sleep Mode | ≤5 μA standby current via dedicated ZZ pin - extends battery life in portable industrial recorders |
Applications
| Industrial Data Logger | Smart Metering Endpoint |
|---|---|
Use Scenario: Continuous timestamped sensor sampling (e.g., temperature, pressure) at 100 Hz with power-loss resilience. IC Role / Device Role / Timing Role: Primary nonvolatile buffer storing raw measurements before batch upload; operates as SRAM-drop-in with deterministic 55-ns writes. Use Value: Eliminates battery maintenance and avoids EEPROM wear-out - sustains 10+ years of daily 1M-write cycles without degradation. | Use Scenario: Tamper-proof energy consumption logging in utility meters with mandatory 10-year data retention. IC Role / Device Role / Timing Role: Secure, sector-protected storage for billing-critical kWh registers and event logs; leverages software write-protect for regulatory compliance. Use Value: Guarantees 151-year retention at +85 °C ambient - exceeds IEC 62056 requirements without thermal derating or refresh overhead. |
| PLC I/O Module | Medical Diagnostic Recorder |
Use Scenario: Real-time buffering of analog input/output state changes in programmable logic controllers with brownout immunity. IC Role / Device Role / Timing Role: Volatile-write-equivalent nonvolatile memory interfaced directly to FPGA or microcontroller parallel bus; uses VDD monitor to halt access during undervoltage. Use Value: Prevents data corruption during line sags - internal low-VDD lockout blocks writes below 2.7 V without external supervisor IC. | Use Scenario: Capturing high-fidelity ECG waveforms during portable patient monitoring where power interruptions are common. IC Role / Device Role / Timing Role: High-speed, low-latency frame buffer between ADC and wireless transmitter; exploits 25-ns page-mode reads for burst streaming. Use Value: Enables continuous 10 kS/s waveform capture with zero write latency - no dropped samples during battery swaps or AC dropout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B104Q2A-BAI | Same F-RAM architecture, but 1-Mbit (64K × 16), 48-pin BGA, 45-ns access | Limited density; BGA packaging requires redesign; lacks TSOP-II footprint compatibility | Select only if board space constraints favor BGA and 1-Mbit capacity suffices |
| AS6C4008-55TIN | 4-Mbit battery-backed SRAM; requires external lithium coin cell and supervisor circuit | Higher BOM cost, reliability risk from battery leakage/dry-out, and RoHS compliance limitations | Choose only if legacy design mandates exact SRAM behavior and F-RAM qualification is not feasible |
Compared with CY14B104Q2A-BAI and AS6C4008-55TIN, FM22L16-55-TG uniquely combines 4-Mbit density, TSOP-II compatibility, monolithic nonvolatility, and 10¹⁴ endurance - enabling simpler, more reliable, and longer-lifecycle designs without battery management or package conversion.
Availability
FM22L16-55-TG is available at Aetrix Electronics and suitable for industrial data loggers, smart metering endpoints, PLC I/O modules, and medical diagnostic recorders requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for FM22L16-55-TG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.
The FM22L16 belongs to Infineon's F-RAM product line, engineered specifically to replace battery-backed SRAM and serial EEPROM in high-endurance, low-latency, nonvolatile data buffering applications.
FAQ
Is FM22L16-55-TG pin-compatible with standard 256K × 16 SRAMs?
Yes - it uses an industry-standard 44-pin TSOP-II footprint and identical signal naming (A0–A17, DQ0–DQ15, CE, OE, WE, UB, LB, VDD, VSS). No PCB redesign is needed for drop-in replacement of devices like IS61LV25616 or AS6C4008, provided VDD range and timing margins align.
Does FM22L16-55-TG require external hardware for write protection?
No - it implements nonvolatile, software-configurable block write protection across eight 32K × 16 sectors. Protection is set via a documented six-read/three-write address/command sequence; no external WP pins, jumpers, or supervisors are required.
How does the NoDelay™ write feature impact system firmware design?
NoDelay™ eliminates all write latency - data is stored nonvolatility on the rising edge of WE with no polling, status checks, or timeout loops. Firmware can issue consecutive writes at full bus speed (110-ns cycle), simplifying real-time logging code and removing EEPROM-style delay dependencies.
Can FM22L16-55-TG operate reliably in high-humidity or vibration-prone environments?
Yes - as a monolithic silicon device with no battery, electrolytic capacitor, or mechanical contacts, it meets industrial reliability standards for moisture resistance, shock, and vibration. Its RoHS-compliant TSOP-II package and ferroelectric process eliminate failure modes associated with BBSRAM in harsh enclosures or mobile equipment.
FM22L16-55-TG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 110ns
- Access Time:
- 110 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
FM22L16-55-TG FAQ
1.How can I place an order for FM22L16-55-TG through Aetrix?
Please submit a Request for Quotation (RFQ) for FM22L16-55-TG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FM22L16-55-TG reliable?
The price and inventory of FM22L16-55-TG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM22L16-55-TG is usually 5 days.
3.What payment methods are accepted for FM22L16-55-TG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM22L16-55-TG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FM22L16-55-TG?
FM22L16-55-TG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FM22L16-55-TG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FM22L16-55-TG?
For technical support, including FM22L16-55-TG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM22L16-55-TG requirements.
6.How does Aetrix verify that FM22L16-55-TG is sourced from the original manufacturer or authorized distributors?
All FM22L16-55-TG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM22L16-55-TG meets industry standards.
7.What is the process for return or replacement of FM22L16-55-TG?
All FM22L16-55-TG units undergo pre-shipment inspection (PSI). If there is an issue with FM22L16-55-TG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FM22L16-55-TG part is unused and in its original packaging.
Return procedure for FM22L16-55-TG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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