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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies FM22L16-55-TGTR

Name: FM22L16-55-TGTR
Brand: Infineon Technologies
SKU: FM22L16-55-TGTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FM22L16-55-TGTR

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: FM22L16-55-TGTR.pdf

Description:: IC FRAM 4MBIT PARALLEL 44TSOP II

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Inventory:2,850

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Product details

Overview

FM22L16-55-TGTR from Infineon Technologies (formerly Cypress) is a 4-Mbit parallel-interface ferroelectric RAM (F-RAM), logically organized as 256K × 16 with configurable 512K × 8 mode via UB/LB controls. It delivers true nonvolatility with 10¹⁴ read/write endurance, 151-year data retention, 55-ns access time, and NoDelay™ writes-enabling rapid logging in industrial PLCs, metering systems, and automotive black-box recorders.

For engineers reviewing the FM22L16-55-TGTR datasheet, FM22L16-55-TGTR pinout, FM22L16-55-TGTR application, or FM22L16-55-TGTR equivalent, key selection criteria include SRAM-compatible timing, software-configurable block write protection, industrial temperature support (–40 °C to +85 °C), TSOP-II package compatibility, and elimination of battery-backup complexity in mission-critical data capture.

Technical Context

The FM22L16-55-TGTR implements a parallel 16-bit bus interface with CE/WE/OE control logic, supporting both CE-initiated and WE-controlled read/write cycles. Its ferroelectric memory array is segmented into eight 32K × 16 blocks, each independently software write-protectable using a nonvolatile 6-read/3-write address/command sequence.

It features a low-voltage monitor that disables memory access when VDD drops below 2.7 V, and supports sleep mode via ZZ pin (5 µA max current). Page mode enables 25-ns cycle-time access within rows using A1–A0 column addressing, while pre-charge is auto-triggered by upper-address (A17–A2) changes or CE deassertion.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	4 Mbit (256K × 16), configurable as 512K × 8 using UB/LB pins
Access Time	55 ns - matches SRAM timing for drop-in replacement without wait-state insertion
Write Endurance	10¹⁴ cycles - supports high-frequency data logging (e.g., 1 kHz sampling for >3,000 years)
Data Retention	151 years at +85 °C - eliminates need for refresh or backup power in sealed industrial enclosures
Supply Voltage	2.7 V to 3.6 V - compatible with standard 3.3 V logic rails and brown-out tolerant operation
Operating Temp	–40 °C to +85 °C - qualified for industrial automation, automotive telematics, and smart grid endpoints
Package	44-pin TSOP-II (400-mil) - surface-mount compatible with standard reflow profiles and board space constraints

Pinout & Package

FM22L16-55-TGTR uses a 44-pin thin small outline package (TSOP-II), 400-mil body width, with standard 0.8-mm lead pitch and JEDEC MO-141AC compliant footprint.

Pin/Terminal	Circuit Role	Design Meaning
A17–A0	Address Inputs	18-bit address bus latched on CE falling edge; A1–A0 enable page-mode column access
DQ15–DQ0	Data I/O Bus	16-bit bidirectional data path; driven only when OE LOW and corresponding UB/LB asserted
WE	Write Enable	Rising edge initiates write; falling edge latches new column address in page mode
CE	Chip Enable	Falling edge latches full address and starts memory cycle; deassertion triggers pre-charge
OE	Output Enable	Controls DQ bus drive; HI-Z when HIGH, enabling bus sharing without contention
UB / LB	Byte Select	Enable DQ15–DQ8 (UB) or DQ7–DQ0 (LB); both required for full 16-bit operation
ZZ	Sleep Control	LOW enters 5 µA sleep mode; must be HIGH before any access; tie to VDD if unused
VDD / VSS	Power / Ground	2.7–3.6 V supply; dual VDD/VSS pairs reduce noise coupling in high-speed parallel interfaces

Key Features

Feature	Design Value
NoDelay™ Writes	Writes complete in same cycle as reads-no polling, no latency, no hidden write cycles
Software Block Write-Protect	Eight 32K × 16 sectors individually protected via nonvolatile command sequence-no external hardware needed
SRAM Pin & Timing Compatibility	Industry-standard 256K × 16 pinout and 55-ns access-replaces AS6C4008/IS61LV25616 without PCB redesign
Monolithic Nonvolatility	Zero battery, zero capacitor, zero rework-single-die solution immune to moisture, shock, and vibration
Low-Power Sleep Mode	5 µA max standby current with ZZ control-enables energy harvesting and battery-operated field sensors

Applications

Industrial Data Logger

Smart Electricity Meter

Use Scenario: Continuous timestamped event logging in programmable logic controllers with 100+ Hz write frequency.

IC Role / Device Role / Timing Role: Nonvolatile memory buffer storing fault codes, sensor snapshots, and operational history without wear-out risk.

Use Value: Eliminates EEPROM wear leveling firmware and avoids BBSRAM battery leakage or cold-temperature failure in unheated cabinets.

Use Scenario: Tamper-proof energy consumption records stored across power outages in ANSI C12.22-compliant meters.

IC Role / Device Role / Timing Role: Primary data storage for billing registers and diagnostic logs, accessed via parallel MCU bus during meter wake-up.

Use Value: Guarantees 151-year retention at 85 °C ambient-meets IEC 62056 long-term archive requirements without thermal derating.

Automotive Event Recorder

Medical Infusion Pump

Use Scenario: Crash-triggered black-box recording capturing 30 seconds of CAN bus, sensor, and actuator states pre-impact.

IC Role / Device Role / Timing Role: High-speed parallel write buffer synchronized to vehicle microcontroller's real-time interrupt service routine.

Use Value: 10¹⁴ endurance supports 10,000+ crash simulations during validation-no degradation across qualification life test.

Use Scenario: Storing drug delivery history, calibration logs, and safety-critical error events in Class II infusion devices.

IC Role / Device Role / Timing Role: Fail-safe memory for FDA-required audit trail, written on every dose completion or alarm condition.

Use Value: No battery or capacitor simplifies IEC 60601-1 safety certification and avoids field recalls due to backup component aging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY14B104Q2A-BAI	Same F-RAM architecture, but 4-Mbit × 8 organization; requires bus-width adaptation	Lacks native 16-bit DQ interface-needs glue logic or MCU GPIO remapping for 16-bit systems	Select only if system uses 8-bit data path or has flexible address/data multiplexing
AS6C4008-55TIN	Standard 4-Mbit SRAM with battery backup; no inherent nonvolatility-requires external LiSOCl₂ cell	Battery introduces reliability risk, temperature limits (–20 °C to +70 °C), and RoHS compliance complications	Choose only for legacy designs where F-RAM firmware integration is not feasible

Compared with CY14B104Q2A-BAI and AS6C4008-55TIN, FM22L16-55-TGTR provides native 16-bit parallel interface, monolithic nonvolatility, and industrial-grade endurance-reducing BOM count, eliminating battery lifecycle management, and enabling direct SRAM drop-in in existing 16-bit controller designs.

Availability

FM22L16-55-TGTR is available at Aetrix Electronics and suitable for industrial data loggers, smart electricity meters, automotive event recorders, and medical infusion pumps requiring stable component supply, long-term obsolescence coverage, and RoHS-compliant manufacturing.

Supply support for FM22L16-55-TGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

FM22L16-55-TGTR belongs to Infineon's F-RAM portfolio-designed specifically to replace battery-backed SRAM and serial EEPROM in high-write-cycle, mission-critical nonvolatile storage applications.

FAQ

Is FM22L16-55-TGTR a direct pin-for-pin and timing-compatible replacement for standard 256K × 16 SRAMs?

Yes. FM22L16-55-TGTR uses an industry-standard 44-pin TSOP-II footprint and matches SRAM timing: 55-ns access time, 110-ns cycle time, and identical CE/WE/OE control behavior. No PCB or firmware changes are required for drop-in replacement in existing 16-bit parallel bus designs.

How does the software write-protection mechanism work, and is it persistent after power loss?

The write-protection state is stored nonvolatilely in dedicated ferroelectric registers. Protection is configured by issuing a precise six-read/three-write command sequence to specific addresses. Once set, protection persists across power cycles and temperature extremes without battery or capacitor support.

What happens during a power brown-out, and how is data integrity maintained?

An internal voltage monitor disables memory access when VDD falls below 2.7 V. This prevents partial writes or corrupted reads during unstable supply conditions. All previously written data remains intact due to ferroelectric nonvolatility, and the device resumes normal operation once VDD stabilizes above threshold.

Can FM22L16-55-TGTR operate in page mode across row boundaries, or is it limited to single-row access?

Page mode is strictly confined within a single row (page). Accessing a new row requires either toggling CE or changing A17–A2. The device automatically initiates pre-charge on upper-address change, ensuring correct row closure and new row activation within tAA (55 ns), preserving timing predictability.

FM22L16-55-TGTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: F-RAM™

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FRAM

Technology:: FRAM (Ferroelectric RAM)

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 110ns

Access Time:: 110 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

FM22L16-55-TGTR FAQ

1.How can I place an order for FM22L16-55-TGTR through Aetrix?

Please submit a Request for Quotation (RFQ) for FM22L16-55-TGTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FM22L16-55-TGTR reliable?

The price and inventory of FM22L16-55-TGTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM22L16-55-TGTR is usually 5 days.

3.What payment methods are accepted for FM22L16-55-TGTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM22L16-55-TGTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FM22L16-55-TGTR?

FM22L16-55-TGTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FM22L16-55-TGTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FM22L16-55-TGTR?

For technical support, including FM22L16-55-TGTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM22L16-55-TGTR requirements.

6.How does Aetrix verify that FM22L16-55-TGTR is sourced from the original manufacturer or authorized distributors?

All FM22L16-55-TGTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM22L16-55-TGTR meets industry standards.

7.What is the process for return or replacement of FM22L16-55-TGTR?

All FM22L16-55-TGTR units undergo pre-shipment inspection (PSI). If there is an issue with FM22L16-55-TGTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FM22L16-55-TGTR part is unused and in its original packaging.

Return procedure for FM22L16-55-TGTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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