Infineon Technologies FM22LD16-55-BG

Overview

FM22LD16-55-BG from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) parallel-interface ferroelectric RAM (F-RAM) with SRAM-compatible pinout, 55 ns access time, 10¹⁴ read/write endurance, and 151-year data retention. It operates at 2.7–3.6 V over –40 °C to +85 °C and delivers true nonvolatile storage without write delay or battery backup - used in industrial data loggers for real-time parameter capture.

For engineers reviewing the FM22LD16-55-BG datasheet, FM22LD16-55-BG pinout, FM22LD16-55-BG application, or FM22LD16-55-BG equivalent, key selection criteria include NoDelay™ write timing, software-configurable block write protection, FBGA-48 package compatibility, and drop-in replacement capability for 256K × 16 SRAMs in high-cycle logging systems.

Technical Context

The FM22LD16-55-BG implements a parallel 16-bit word-wide F-RAM array organized as eight 32K × 16 blocks, each individually software write-protectable via a deterministic six-read/three-write address/command sequence. Its ferroelectric memory cell enables immediate nonvolatile writes with no internal write cycle overhead.

It supports both CE- and WE-controlled read/write operations, page mode access with ≤25 ns cycle time across column addresses A1–A0, and automatic pre-charge on upper address (A17–A2) change or CE deassertion. A built-in low-voltage monitor disables memory access when VDD falls below 2.7 V.

Key Specifications

Pinout & Package

FM22LD16-55-BG uses a 48-ball fine-pitch ball grid array (FBGA) package with 0.8 mm pitch, 6 mm × 8 mm body size, and JEDEC MO-245 compliant footprint. Pin assignments follow industry-standard 256K × 16 SRAM layout for mechanical and electrical compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B104N-BA25XI and IS61LV25616AL-10TLI, FM22LD16-55-BG uniquely delivers full 4-Mbit nonvolatility in FBGA-48 with zero write latency and industrial temperature support - making it optimal for new designs requiring high endurance and compact packaging without backup components.

Availability

FM22LD16-55-BG is available at Aetrix Electronics and suitable for industrial data loggers, smart metering systems, and PLC I/O modules requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for FM22LD16-55-BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

The FM22LD16 belongs to Infineon's F-RAM product line, engineered to replace battery-backed SRAM and serial EEPROM in high-endurance, low-power, mission-critical nonvolatile memory applications.

FAQ

Is FM22LD16-55-BG pin-compatible with standard 256K × 16 SRAMs?

Yes - FM22LD16-55-BG uses an industry-standard 256K × 16 parallel SRAM pinout, including identical A0–A17, DQ0–DQ15, CE, WE, OE, UB, LB, VDD, and VSS assignments. No PCB redesign is needed when replacing devices such as IS61LV25616AL or CY62167EV30, provided voltage and timing margins are verified.

How does the software write-protection mechanism work?

The FM22LD16-55-BG divides memory into eight 32K × 16 blocks, each independently protected via a deterministic six-read/three-write command sequence. The host MCU issues specific read addresses followed by a protection byte and its complement. Correct execution stores the setting nonvolatily; any error aborts the sequence and leaves protection unchanged.

What is the significance of "NoDelay™ writes" in system design?

NoDelay™ means write operations complete within the same bus cycle as reads - no wait states, status polling, or timeout loops are required in firmware. This simplifies code, reduces CPU load, eliminates EEPROM-style write latency bottlenecks, and enables deterministic real-time data capture at maximum bus throughput.

Does FM22LD16-55-BG require external support components for nonvolatility?

No - FM22LD16-55-BG is monolithic nonvolatile memory with no battery, supercapacitor, or charge-pump circuitry required. Data retention is inherent to the ferroelectric process and guaranteed for 151 years at +85 °C. This eliminates BOM cost, board area, reliability risks from backup component aging, and rework steps associated with hybrid modules.