Infineon Technologies FM22LD16-55-BGTR

Overview

FM22LD16-55-BGTR from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) ferroelectric RAM (F-RAM) with SRAM-compatible parallel interface, 55 ns access time, 10¹⁴ read/write endurance, and 151-year data retention. It operates from 2.7 V to 3.6 V across –40 °C to +85 °C and is packaged in a 48-ball FBGA for industrial nonvolatile memory applications requiring rapid, reliable writes without backup power.

For engineers reviewing the FM22LD16-55-BGTR datasheet, FM22LD16-55-BGTR pinout, FM22LD16-55-BGTR application, or FM22LD16-55-BGTR equivalent, key selection criteria include NoDelay™ write timing, software-configurable block write-protection, page-mode 25 ns cycle time, and drop-in compatibility with 256K × 16 SRAM footprints in metering, PLC, and data logger systems.

Technical Context

The FM22LD16-55-BGTR implements a parallel-interface F-RAM core using a ferroelectric capacitor-based storage cell, enabling true nonvolatility without write latency or wear leveling. Its logic block includes address latching on CE fall, dual-byte enable (UB/LB) for 8-bit sub-access, and internal low-voltage monitoring that blocks array access below V_DD(min).

It supports two write control modes: CE-initiated (WE asserted before CE fall) and WE-initiated (CE fall first, then WE fall), both delivering immediate nonvolatile storage. The memory array is partitioned into eight 32K × 16 blocks, each independently protected via a six-read/three-write address/command sequence stored nonvolatilely in dedicated protection registers.

Key Specifications

Pinout & Package

FM22LD16-55-BGTR uses a 48-ball fine-pitch ball grid array (FBGA) package with 0.8 mm pitch, 6 mm × 8 mm body size, and JEDEC-standard footprint. Pin assignments follow industry-standard 256K × 16 SRAM layout for mechanical and electrical compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.

Compared with CY14B104Q5BNAXI and AS7C34096B-15JIN, FM22LD16-55-BGTR uniquely delivers monolithic nonvolatility with SRAM timing, byte-select flexibility, and industrial FBGA packaging-enabling simpler, more reliable designs where power interruption resilience is non-negotiable.

Availability

FM22LD16-55-BGTR is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, data loggers, and medical diagnostics requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for FM22LD16-55-BGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

The FM22LD16 belongs to Infineon's F-RAM product line, engineered to replace battery-backed SRAM and legacy EEPROM/Flash in applications demanding infinite endurance, instant nonvolatile writes, and zero-power data retention.

FAQ

Is FM22LD16-55-BGTR pin-compatible with standard 256K × 16 SRAMs?

Yes. It uses an industry-standard 256K × 16 SRAM pinout in 48-ball FBGA, including identical A0–A17, DQ0–DQ15, CE, WE, OE, and VDD/VSS placement. UB and LB map to standard byte-enable functions, and NC pins align with common SRAM layouts - enabling direct PCB footprint reuse without redesign.

How does the software write-protection mechanism work without external hardware?

The FM22LD16-55-BGTR embeds nonvolatile protection registers. Protection is enabled by issuing a precise six-read/three-write address/data sequence over the parallel bus. Each of the eight 32K × 16 blocks is controlled by one bit in a protection byte; settings persist through power cycles and require no external WP pin or strapping resistors.

What is the significance of "NoDelay™ writes" in system firmware design?

NoDelay™ means write completion is synchronous with the bus cycle - no status polling, timeout loops, or interrupt handling is needed. Firmware can issue consecutive writes back-to-back at full bus bandwidth, reducing CPU overhead and eliminating race conditions associated with delayed nonvolatile storage like EEPROM or Flash.

Does FM22LD16-55-BGTR require special PCB layout considerations compared to SRAM?

Yes. While footprint and signal routing match SRAM, F-RAM demands stricter VDD decoupling: two 100 nF X7R ceramics near VDD balls plus one 4.7 µF tantalum, per datasheet Figure 22. Also, NC balls (A2, E1, H1) must be left unconnected or tied to ground per IPC-7351; floating NCs may cause noise coupling in high-density layouts.