Infineon Technologies FM24C16B-GTR

Overview

FM24C16B-GTR from Cypress Semiconductor is a 16-Kbit (2K × 8) serial I²C ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It operates at 4.5–5.5 V over –40 °C to +85 °C in an 8-pin SOIC package and serves as a hardware drop-in replacement for I²C EEPROM in real-time data logging systems.

For engineers reviewing the FM24C16B-GTR datasheet, FM24C16B-GTR pinout, FM24C16B-GTR application, or FM24C16B-GTR equivalent, key selection criteria include write-speed-critical nonvolatile storage, high-cycle-count industrial telemetry, I²C bus timing compatibility up to 1 MHz, and elimination of write-polling overhead in embedded firmware.

Technical Context

The FM24C16B-GTR implements a true nonvolatile memory array using ferroelectric capacitor technology, enabling RAM-like random-access reads/writes without charge-pump circuitry. Its I²C interface supports standard-mode (100 kHz), fast-mode (400 kHz), and fast-mode plus (1 MHz) timing - all with identical slave address format (1010xxxR/W) and page-select addressing (3-bit segment + 8-bit row).

Unlike EEPROM, it requires no internal write-verify cycle or delay: each byte is committed immediately upon ACK, and the internal address latch auto-increments after every transferred byte. The device contains no power management logic beyond POR, relying entirely on external VDD stability within ±5% tolerance for correct operation.

Key Specifications

Pinout & Package

FM24C16B-GTR is housed in an 8-pin Small Outline Integrated Circuit (SOIC) package with gull-wing leads, 1.27 mm pitch, and RoHS-compliant finish. Pin 1 is marked by a beveled corner or dot; pin numbering follows standard counter-clockwise layout when viewing top side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with AT24C16D-SSHM-T and MB85RC16, FM24C16B-GTR delivers superior write throughput and guaranteed 151-year retention at 5 V, making it optimal for time-deterministic industrial logging where EEPROM latency causes data gaps and FRAM voltage flexibility is not required.

Availability

FM24C16B-GTR is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, and PLC I/O modules requiring stable component supply, long-term obsolescence coverage, and guaranteed RoHS-compliant manufacturing.

Supply support for FM24C16B-GTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability nonvolatile memory and microcontroller solutions for industrial, automotive, and IoT applications.

The FM24C16B-GTR belongs to Cypress's F-RAM product line, engineered specifically to replace EEPROM in applications demanding rapid, frequent, and deterministic nonvolatile writes without firmware complexity.

FAQ

Is FM24C16B-GTR pin-compatible with standard 24C16 EEPROMs?

Yes - FM24C16B-GTR uses identical 8-pin SOIC packaging and matches the pinout (WP, SCL, SDA, VSS, VDD) and I²C slave address structure (1010xxxR/W) of industry-standard 24C16 EEPROMs. No PCB redesign is needed for drop-in replacement, though firmware polling loops should be removed to exploit NoDelay™ writes.

What is the maximum I²C clock frequency supported?

The FM24C16B-GTR supports up to 1 MHz I²C clock frequency in fast-mode plus, with guaranteed timing compliance across the full industrial temperature range (–40 °C to +85 °C). This enables sustained write throughput of ~100 kbytes/second in burst mode, significantly exceeding standard EEPROM capabilities.

Does FM24C16B-GTR require external high-voltage programming circuitry?

No - unlike EEPROM or flash, FM24C16B-GTR performs all writes using only the standard 4.5–5.5 V VDD supply. Its ferroelectric memory cells switch polarization states at logic-level voltages, eliminating charge pumps, boost converters, or elevated programming voltages required by competing nonvolatile technologies.

How does the WP pin behave during power-up?

The WP pin has an internal pull-down resistor (~100 kΩ), ensuring it defaults to logic LOW (write-enabled) when left unconnected or during VDD ramp-up. To enable write protection, WP must be actively driven HIGH to VDD; floating WP results in full memory writability and is not safe for production systems requiring data integrity.