Infineon Technologies FM24CL64B-GATR

Overview

FM24CL64B-GATR from Cypress Semiconductor is an automotive-grade 64-Kbit (8 K × 8) serial I²C F-RAM nonvolatile memory with NoDelay™ write capability, 10¹³ read/write endurance, and guaranteed operation from –40 °C to +125 °C. It serves as a hardware-compatible replacement for I²C EEPROM in data-logging and real-time control systems where rapid, frequent writes are required.

For engineers reviewing the FM24CL64B-GATR datasheet, FM24CL64B-GATR pinout, FM24CL64B-GATR application, or FM24CL64B-GATR equivalent, key selection criteria include write-cycle speed (no polling), AEC-Q100 Grade 1 compliance, 1-MHz I²C interface support, 3.0–3.6 V supply range, and 8-pin SOIC packaging with WP and address pins (A0–A2).

Technical Context

The FM24CL64B-GATR implements a ferroelectric memory array logically organized as 8,192 × 8 bits, accessed via standard I²C protocol with 7-bit slave address (1010xxxR/W) and two-byte memory addressing. Its internal address latch auto-increments after each byte transfer, enabling burst reads/writes without re-addressing.

Unlike EEPROM, it performs writes at bus speed-no internal write cycle delay, no status polling, and no elevated voltage generation. The device uses Schmitt-triggered SDA/SCL inputs, open-drain SDA with slope control, and internally pulled-down WP and address pins for deterministic power-on behavior.

Key Specifications

Pinout & Package

FM24CL64B-GATR is housed in an 8-pin Small Outline Integrated Circuit (SOIC) package with gull-wing leads, RoHS-compliant finish, and moisture sensitivity level (MSL) 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with AT24C64D-SSHM-T and MR25H640DFM, FM24CL64B-GATR uniquely delivers I²C compatibility, automotive temperature range, and true zero-delay writes-enabling deterministic real-time data capture without firmware complexity or interface redesign.

Availability

FM24CL64B-GATR is available at Aetrix Electronics and suitable for automotive telematics, engine control units, ADAS sensor modules, and body control systems requiring stable component supply across extended product lifecycles.

Supply support for FM24CL64B-GATR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with expertise in nonvolatile memory and programmable systems.

The FM24CL64B-GATR belongs to Cypress's automotive F-RAM product line, engineered specifically to replace EEPROM in safety-critical, high-write-frequency automotive subsystems while meeting AEC-Q100 Grade 1 requirements.

FAQ

Is FM24CL64B-GATR pin-compatible with standard 8-pin I²C EEPROMs like AT24C64?

Yes-FM24CL64B-GATR uses identical 8-pin SOIC packaging and matches the pin functions of AT24C64: A0–A2, SDA, SCL, WP, VDD, and VSS are electrically and physically aligned. No PCB redesign is needed for drop-in replacement, though WP logic polarity and I²C timing margins should be verified per system clock rate.

Does FM24CL64B-GATR require special I²C initialization or firmware changes?

No-FM24CL64B-GATR uses standard I²C protocol with 7-bit slave address (0xA0–0xA7 based on A2–A0), identical START/STOP/ACK sequences, and no command overhead. Existing EEPROM drivers work unchanged; only polling loops can be removed due to NoDelay™ writes.

What is the maximum I²C bus capacitance supported by FM24CL64B-GATR at 1 MHz?

Per datasheet AC specifications, FM24CL64B-GATR supports ≤20 pF total bus capacitance at 1 MHz. This corresponds to ~10 cm of standard FR4 trace length with typical microcontroller I/O drive strength. For longer buses, series resistors or active bus buffers may be required to meet rise/fall time limits.

How does the WP pin behave during power-up, and is external pull-up required?

The WP pin is internally pulled down, ensuring write-enable state at power-on reset. No external pull-up is required unless write protection is desired-then connect WP directly to VDD. Floating WP is not recommended, as noise could cause unintended write lock during transients.