Infineon Technologies FM24V05-G

Overview

FM24V05-G from Cypress Semiconductor is a 512-Kbit (64 K × 8) serial I²C ferroelectric RAM (F-RAM) nonvolatile memory with NoDelay™ write capability, 10¹⁴ read/write endurance, and 151-year data retention at +85 °C. It operates from 2.0 V to 3.6 V across –40 °C to +85 °C and serves as a hardware-compatible drop-in replacement for I²C EEPROM in real-time data logging and industrial control systems.

For engineers reviewing the FM24V05-G datasheet, FM24V05-G pinout, FM24V05-G application, or FM24V05-G equivalent, key selection criteria include bus-speed write performance without polling, ultra-high endurance under frequent write cycles, low active current (175 µA @ 100 kHz), and guaranteed industrial temperature operation - all critical for deterministic embedded data capture.

Technical Context

The FM24V05-G implements a true random-access nonvolatile memory array using ferroelectric capacitor technology, enabling byte-level writes at full I²C bus speed without internal write-cycle delays or elevated voltage generation. Its architecture eliminates the need for data polling and supports immediate sequential access via auto-incremented 16-bit address latch.

It complies fully with I²C protocol specifications including START/STOP conditions, ACK/NACK handshaking, and slave addressing with 3-bit device select (A2–A0). The device supports standard-mode (100 kHz), fast-mode (400 kHz), and high-speed mode (3.4 MHz) with master code entry, and includes a read-only Device ID register containing manufacturer and product identifiers.

Key Specifications

Pinout & Package

FM24V05-G is housed in an 8-pin Small Outline Integrated Circuit (SOIC) package with gull-wing leads, RoHS-compliant, and rated for surface-mount reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with AT24C512B-SSHL-T and MB85RC512T, FM24V05-G uniquely delivers guaranteed 2.0–3.6 V operation, native support for 3.4 MHz I²C, and Cypress's validated industrial temperature qualification - making it optimal for space-constrained, low-voltage, high-write-frequency applications.

Availability

FM24V05-G is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, automotive body control modules, and medical infusion pump calibration storage requiring stable component supply and long-term lifecycle assurance.

Supply support for FM24V05-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in microcontrollers, memory, and connectivity solutions for industrial, automotive, and consumer applications.

The FM24V05-G belongs to Cypress's F-RAM product line, engineered specifically to replace EEPROM in applications demanding rapid, reliable, low-power nonvolatile data storage without firmware overhead.

FAQ

Is FM24V05-G pin-compatible with standard I²C EEPROMs like the AT24C512?

Yes - FM24V05-G uses an 8-pin SOIC package with identical pinout (A0–A2, SDA, SCL, WP, VDD, VSS) and I²C electrical signaling, enabling direct hardware replacement without PCB redesign. However, firmware must be verified for timing assumptions, as FM24V05-G eliminates write delays and does not require polling loops.

Does FM24V05-G support high-speed I²C mode (3.4 MHz) out of the box?

No - high-speed mode requires the master to first transmit a specific 8-bit master code (00001XXXb) before issuing the FM24V05-G slave address. Once enabled, the device operates at up to 3.4 MHz until a STOP condition resets the mode. Standard 100 kHz/400 kHz operation requires no initialization.

How does the WP pin function, and what happens if it's left floating?

The WP pin is internally pulled down; leaving it unconnected defaults to write-enable mode. Tying WP to VDD activates hardware write protection for the entire memory array. Floating WP is electrically safe but not recommended - unintended noise coupling could cause intermittent protection activation, so a defined connection (VSS or VDD) is required per design best practice.

Can FM24V05-G retain data during brown-out conditions below 2.0 V?

No - data retention is only guaranteed when VDD remains ≥2.0 V during write operations and while powered. Below 2.0 V, the device enters undefined state; however, previously written data remains intact as long as VDD does not fall below the data retention threshold (~1.5 V typical, per characterization). For brown-out resilience, external supervisor circuits are recommended.