Infineon Technologies FM25C160B-GATR
- Part No.:
- FM25C160B-GATR
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
FM25C160B-GATR.pdf
- Description:
- IC FRAM 16KBIT SPI 15MHZ 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:2,002
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FM25C160B-GATR from Cypress Semiconductor is a 16-Kbit (2 K × 8) automotive-grade serial F-RAM with SPI interface, operating from –40 °C to +125 °C, supporting up to 15 MHz clock, 1013 write cycles, and NoDelay™ immediate writes. It serves as nonvolatile data logging memory in engine control units, airbag controllers, and ADAS sensor nodes where rapid, reliable byte-level writes are critical.
For engineers reviewing the FM25C160B-GATR datasheet, FM25C160B-GATR pinout, FM25C160B-GATR application, or FM25C160B-GATR equivalent, key selection criteria include AEC-Q100 Grade 1 compliance, SPI mode 0/3 support, hardware/software write protection, 4.5–5.5 V operation, and absence of write polling overhead in real-time systems.
Technical Context
The FM25C160B-GATR implements a ferroelectric memory array with zero write latency-data commits at bus speed without internal erase or program delays. Its SPI slave architecture supports full-duplex mode 0 (CPOL=0, CPHA=0) and mode 3 (CPOL=1, CPHA=1), using standard opcodes (0x02, 0x03, 0x06, 0x04, 0x05) for write enable, read, write, and status register access.
Write protection is enforced via three independent mechanisms: hardware WP pin (active-low), software WREN/WRDI instructions, and configurable block protection bits (BP1/BP0) in the 8-bit status register. The device lacks internal voltage regulation and requires stable VDD within ±5% tolerance to ensure correct status register behavior and data retention integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 16 Kbit (2,048 × 8), enabling compact firmware parameter storage without page management |
| Interface | SPI slave, modes 0 & 3, 15 MHz max - compatible with most MCU SPI peripherals without protocol translation |
| Endurance | 1013 read/write cycles - supports >10 years of continuous 100-Hz logging in automotive black-box recorders |
| Data retention | 121 years at +85 °C - exceeds automotive lifetime requirements without refresh or wear leveling |
| Operating voltage | 4.5 V to 5.5 V - matches legacy 5 V automotive microcontroller I/O rails without level shifting |
| Temperature range | –40 °C to +125 °C (AEC-Q100 Grade 1) - qualified for under-hood ECU deployment |
| Active current | 300 µA at 1 MHz - enables low-power wake-on-event logging in battery-backed modules |
Pinout & Package
FM25C160B-GATR is housed in an 8-pin SOIC package (5.3 mm × 6.2 mm, 1.27 mm pitch), optimized for automated SMT assembly and thermal reliability in automotive PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select input | Active-low enable; places device in standby (10 µA) when HIGH; must fall before each opcode |
| SCK | Serial clock input | Synchronizes all I/O; inputs latched on rising edge, outputs driven on falling edge |
| SI | Serial input | Receives opcodes, addresses, and write data; must be driven to valid logic level per IDD spec |
| SO | Serial output | Drives read data during active CS; tristated otherwise, including during HOLD assertion |
| WP | Write protect input | Hardware lock for status register writes when WPEN=1; must tie to VDD if unused |
| HOLD | Bus hold input | Suspends ongoing read/write when LOW; transitions only allowed while SCK=LOW |
| VSS | Ground | System reference return path; required connection for functional and EMI compliance |
| VDD | Power supply | 4.5–5.5 V nominal; no internal regulation - external filtering essential for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ write architecture | Eliminates write polling and timeout handling in firmware - next SPI transaction starts immediately after byte transfer |
| 1013 endurance | Enables high-frequency data capture (e.g., 1 kHz sensor sampling) for >300 years without wear-out failure |
| Dual-mode SPI compatibility | Interoperates with both legacy (mode 0) and noise-immune (mode 3) MCU SPI configurations without hardware change |
| Three-tier write protection | Prevents accidental overwrites via pin-based lock, instruction-based enable/disable, and software-configurable block locking |
| AEC-Q100 Grade 1 qualification | Validated for continuous operation at +125 °C ambient - suitable for powertrain and chassis control modules |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Storing real-time calibration offsets and fault logs during engine runtime. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory interfaced directly to MCU SPI port with deterministic sub-microsecond write latency. Use Value: Prevents data loss during unexpected ignition-off events due to zero write delay and guaranteed 121-year retention. | Use Scenario: Recording radar/LiDAR timestamped sensor fusion metadata in collision-avoidance modules. IC Role / Device Role / Timing Role: High-endurance buffer for burst-mode event logging at 500 Hz with no flash wear leveling overhead. Use Value: Supports >10 million crash-event records over vehicle lifetime without degradation or firmware intervention. |
| Electronic Power Steering (EPS) | Automotive Body Control Module (BCM) |
Use Scenario: Capturing torque sensor drift compensation values across steering cycles. IC Role / Device Role / Timing Role: SPI-connected persistent memory updated on every ignition cycle with hardware WP pin enabled. Use Value: Maintains precise steering assist calibration across 15+ year service life without EEPROM-style write fatigue. | Use Scenario: Storing user-configurable lighting profiles and door-lock history in gateway ECUs. IC Role / Device Role / Timing Role: Low-power (10 µA standby) nonvolatile storage accessed intermittently via SPI during CAN wake-up events. Use Value: Reduces system quiescent current by 40% vs. SPI flash alternatives while ensuring 1013-cycle reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial nonvolatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT25DF021-SSH-T | 2 Mbit SPI flash; requires 25 ms page program time; 100K write cycles; no hardware WP pin | Lacks deterministic write timing; unsuitable for sub-100 µs event capture; needs polling and wear leveling | Select only if density >16 Kbit is mandatory and write frequency <100 Hz |
| BR25H160FJ-WE2 | 16 Kbit SPI EEPROM; 1 ms write time; 1M write cycles; supports AEC-Q100 Grade 2 (–40 °C to +105 °C) | Lower temperature rating; slower write response; insufficient for 125 °C under-hood use | Acceptable for cabin modules but not powertrain; verify thermal derating in final layout |
Compared with AT25DF021-SSH-T and BR25H160FJ-WE2, FM25C160B-GATR uniquely delivers simultaneous AEC-Q100 Grade 1 qualification, 1013 endurance, and true zero-latency writes-making it the only option for safety-critical, high-write-rate automotive logging where timing predictability and lifetime reliability are non-negotiable.
Availability
FM25C160B-GATR is available at Aetrix Electronics and suitable for engine control units, ADAS sensor nodes, electronic power steering systems, and body control modules requiring stable component supply across extended automotive production lifecycles.
Supply support for FM25C160B-GATR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on memory, PSoC, and connectivity products.
The FM25C160B-GATR belongs to Cypress's automotive F-RAM product line, engineered specifically to replace serial flash and EEPROM in safety-critical, high-write-frequency automotive subsystems where data integrity and timing determinism are paramount.
FAQ
Is FM25C160B-GATR pin-compatible with standard 8-pin SPI EEPROMs?
Yes - FM25C160B-GATR uses identical 8-pin SOIC pinout and SPI command set (0x02/0x03/0x06/0x04) as industry-standard 16-Kbit SPI EEPROMs. No PCB redesign is needed; only firmware update is required to remove write polling loops and adjust timing margins for immediate writes.
Does FM25C160B-GATR require external high-voltage programming circuitry?
No - FM25C160B-GATR operates from a single 4.5–5.5 V supply and performs all write operations at bus speed without charge pumps, high-voltage generators, or erase cycles. This eliminates external HV components and associated layout complexity found in flash and EEPROM designs.
How does the HOLD pin function during active memory access?
When HOLD is pulled LOW during any SPI transaction (read or write), the FM25C160B-GATR suspends communication immediately, tri-states SO, and ignores further SCK/CS transitions until HOLD returns HIGH. This allows the host MCU to service higher-priority interrupts without data corruption or bus contention.
Can FM25C160B-GATR be used in SPI multi-drop configurations?
Yes - FM25C160B-GATR supports multi-drop SPI buses via individual CS lines. Each device responds only when its CS is LOW; SI/SO lines may be shared across multiple units. No arbitration or address decoding is required beyond standard SPI chip select routing.
FM25C160B-GATR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 15 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
FM25C160B-GATR FAQ
1.How can I place an order for FM25C160B-GATR through Aetrix?
Please submit a Request for Quotation (RFQ) for FM25C160B-GATR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FM25C160B-GATR reliable?
The price and inventory of FM25C160B-GATR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM25C160B-GATR is usually 5 days.
3.What payment methods are accepted for FM25C160B-GATR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM25C160B-GATR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FM25C160B-GATR?
FM25C160B-GATR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FM25C160B-GATR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FM25C160B-GATR?
For technical support, including FM25C160B-GATR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM25C160B-GATR requirements.
6.How does Aetrix verify that FM25C160B-GATR is sourced from the original manufacturer or authorized distributors?
All FM25C160B-GATR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM25C160B-GATR meets industry standards.
7.What is the process for return or replacement of FM25C160B-GATR?
All FM25C160B-GATR units undergo pre-shipment inspection (PSI). If there is an issue with FM25C160B-GATR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FM25C160B-GATR part is unused and in its original packaging.
Return procedure for FM25C160B-GATR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FM25C160B-GATR Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

