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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies FM25H20-DG

Name: FM25H20-DG
Brand: Infineon Technologies
SKU: FM25H20-DG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FM25H20-DG

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 8-WDFN Exposed Pad

Datasheet:: FM25H20-DG.pdf

Description:: IC FRAM 2MBIT SPI 40MHZ 8DFN

Quantity:: RFQ Add To RFQ list

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Inventory:1,002

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Product details

Overview

FM25H20-DG from Infineon Technologies (formerly Cypress) is a 2-Mbit serial SPI F-RAM memory organized as 256 K × 8, featuring NoDelay™ writes, 10¹⁴ read/write endurance, 151-year data retention at +85 °C, 40-MHz SPI interface, and industrial-grade operation from –40 °C to +85 °C - deployed in real-time data logging systems where rapid nonvolatile writes prevent loss during power interruption.

For engineers reviewing the FM25H20-DG datasheet, FM25H20-DG pinout, FM25H20-DG application, or FM25H20-DG equivalent, key selection criteria include write latency independence from bus speed, hardware/software write protection granularity, VDD range compatibility (2.7–3.6 V), and drop-in replacement feasibility for serial EEPROM or flash in high-cycle telemetry nodes.

Technical Context

The FM25H20-DG implements a ferroelectric memory array with zero-latency write execution: each byte written is committed immediately without polling, enabling deterministic timing-critical storage. Its SPI slave architecture supports modes 0 (CPOL = 0, CPHA = 0) and 3 (CPOL = 1, CPHA = 1), with SCK up to 40 MHz and full-duplex SI/SO signaling.

Write protection is enforced via three independent mechanisms: hardware WP pin control (active-low), software WREN/WRDI instructions, and programmable block protection (1/4, 1/2, or full array) through the 3-bit nonvolatile status register. The HOLD pin suspends ongoing operations synchronously with SCK low, preserving bus state during host interrupts.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	2 Mbit (256 K × 8); provides 262,144 addressable bytes with 18-bit addressing - eliminates need for bank switching in firmware.
SPI clock frequency	Up to 40 MHz; enables ≤25 ns per bit transfer - supports sub-10 µs single-byte writes at maximum rate.
Write endurance	10¹⁴ cycles; exceeds EEPROM by 100 million× - sustains >27,000 writes/sec continuously for 10+ years in data-acquisition buffers.
Data retention	151 years at +85 °C; guaranteed per JEDEC JESD22-A117 - eliminates periodic refresh or backup power requirements.
Supply voltage	2.7 V to 3.6 V; compatible with 3.3 V logic domains without level shifters - simplifies integration with ARM Cortex-M and RISC-V microcontrollers.
Active current	1 mA at 1 MHz; scales linearly with clock frequency - enables low-power wake-up-and-log operation in battery-powered sensors.
Standby current	80 µA typical; drops to 3 µA in sleep mode - extends shelf life of sealed industrial monitoring units.

Pinout & Package

FM25H20-DG is available in two RoHS-compliant packages: 8-pin SOIC (3.9 mm × 4.9 mm) and 8-pin TDFN (2 mm × 3 mm) with exposed pad (unconnected). Both share identical pin functions and electrical behavior.

Pin/Terminal	Circuit Role	Design Meaning
CS	Chip Select input	Active-low enable: device enters standby and tristates SO when HIGH; all commands require falling edge to initiate.
SCK	Serial clock input	Synchronous timing reference: inputs latched on rising edge, outputs driven on falling edge - supports interrupted clocking.
SI	Serial data input	Receives opcodes, addresses, and write data; must be held valid during active CS to meet IDD specs.
SO	Serial data output	Drives read data and status bits only during active reads; high-impedance otherwise - allows multi-drop SPI bus sharing.
WP	Write protect input	Hardware lock: prevents status register writes when WPEN = 1 and WP = LOW - critical for immutable configuration storage.
HOLD	Operation suspend input	Pauses ongoing read/write mid-transfer when LOW and SCK = LOW - preserves internal state for host context switches.
VSS	Ground	Reference return path for all I/O and core logic - requires low-impedance connection to system ground plane.
VDD	Power supply	Core and I/O supply: 2.7–3.6 V; powers internal charge pump for ferroelectric switching - no external VPP required.

Key Features

Feature	Design Value
NoDelay™ write architecture	Zero wait-state writes: data committed to nonvolatile array within one SPI byte transfer - eliminates firmware polling loops and timeout handling.
Ferroelectric process technology	10¹⁴ endurance with no wear leveling required - enables direct mapping of circular buffers to physical addresses in firmware.
Multi-layer write protection	Hardware (WP pin), instruction-based (WREN/WRDI), and block-level (status register bits BP1/BP0) - enforces secure boot parameter locking.
Industrial temperature range	–40 °C to +85 °C operation with full 40-MHz performance - validated for deployment in motor drive controllers and PLC I/O modules.
Low-voltage sleep mode	3 µA consumption with retained memory state - supports energy harvesting nodes that wake every 5 seconds to log sensor data.

Applications

Smart Meter Data Logging

Industrial PLC Configuration Storage

Use Scenario: Capturing time-stamped energy consumption bursts every 100 ms during grid transients.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory buffering raw ADC samples before batch upload to MCU flash.

Use Value: 10¹⁴ endurance ensures >30 years of daily 10,000-write cycles without degradation - avoids field-replacement due to memory wear-out.

Use Scenario: Storing calibrated I/O module parameters and firmware update staging area in modular automation racks.

IC Role / Device Role / Timing Role: Configuration register bank with atomic write capability and hardware WP lock against accidental overwrites.

Use Value: NoDelay™ writes guarantee parameter updates complete within 250 ns - prevents race conditions during hot-swap I/O module insertion.

Medical Sensor Event Buffering

Automotive Telematics Black Box

Use Scenario: Recording ECG anomaly triggers and timestamps during battery-backed portable diagnostics.

IC Role / Device Role / Timing Role: Power-fail-safe event logger retaining last 512 triggered frames without capacitor hold-up circuitry.

Use Value: 151-year data retention at +85 °C validates long-term archival compliance per IEC 62304 Class B software requirements.

Use Scenario: Capturing vehicle CAN bus error frames and GPS coordinates during crash events for forensic analysis.

IC Role / Device Role / Timing Role: Crash-triggered ring buffer with immediate write commit on power collapse detection.

Use Value: Sub-microsecond write latency ensures ≥99.9% frame capture fidelity even during simultaneous airbag deployment power sag.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MB85RS2MT-FPNSE1	Fujitsu 2-Mbit FRAM; 20-MHz max SPI, 1.8–3.6 V supply, 10¹³ endurance, 10-year retention at +85 °C	Limited to lower clock rates and shorter retention - suitable for cost-sensitive consumer IoT but not mission-critical industrial logging.	Select when VDD flexibility down to 1.8 V is required and 40-MHz throughput is unnecessary.
AT25SF041-SSHD-B	Microchip 4-Mbit serial flash; 105-MHz DTR capable, 2.7–3.6 V, 100k program/erase cycles, requires 25 ms page programming	Page-erase latency and limited endurance necessitate wear leveling and buffering - increases firmware complexity and failure modes.	Select only when higher density is mandatory and write frequency is <100×/hour; avoid for burst logging.

Compared with MB85RS2MT-FPNSE1 and AT25SF041-SSHD-B, FM25H20-DG uniquely delivers 40-MHz deterministic writes, 151-year retention, and 100× greater endurance - making it the sole choice for applications requiring both speed and longevity without firmware overhead.

Availability

FM25H20-DG is available at Aetrix Electronics and suitable for smart meter data logging, industrial PLC configuration storage, and medical sensor event buffering requiring stable component supply across extended product lifecycles.

Supply support for FM25H20-DG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

FM25H20-DG belongs to Infineon's F-RAM portfolio, engineered specifically for high-cycle, low-latency nonvolatile storage in resource-constrained embedded systems where flash and EEPROM introduce timing uncertainty and wear limitations.

FAQ

Is FM25H20-DG pin-compatible with standard SPI EEPROMs like AT25DF041?

FM25H20-DG shares identical 8-pin SOIC/TDFN footprints and SPI command set (including WREN, WRDI, RDSR, WRSR, READ, WRITE) with industry-standard serial EEPROMs. Pin assignments for CS, SCK, SI, SO, WP, and HOLD match functional equivalents - enabling direct PCB footprint reuse without layout changes.

Does FM25H20-DG require external high-voltage programming circuitry?

No. FM25H20-DG uses ferroelectric storage cells switched at standard VDD (2.7–3.6 V) with no external VPP or charge pump components. All write operations execute using only the supplied VDD rail - eliminating high-voltage generator design, BOM cost, and associated EMC concerns.

How does the HOLD pin behave during an active write operation?

When HOLD is asserted LOW while SCK is LOW, FM25H20-DG completes the current byte transfer then suspends all further activity. SCK, SI, and CS are ignored until HOLD returns HIGH; the device resumes exactly where it left off - preserving address pointer and internal state without data corruption.

Can FM25H20-DG operate reliably at 40 MHz across the full industrial temperature range?

Yes. Infineon specifies 40-MHz maximum SCK frequency over –40 °C to +85 °C with guaranteed timing margins. AC switching characteristics (tSU, tH, tV) are fully characterized and tested across temperature and voltage extremes - no derating required for full-speed operation.

FM25H20-DG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: F-RAM™

Package/Case:: 8-WDFN Exposed Pad

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FRAM

Technology:: FRAM (Ferroelectric RAM)

Memory Size:: 2Mbit

Memory Organization:: 256K x 8

Memory Interface:: SPI

Clock Frequency:: 40 MHz

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

FM25H20-DG FAQ

1.How can I place an order for FM25H20-DG through Aetrix?

Please submit a Request for Quotation (RFQ) for FM25H20-DG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FM25H20-DG reliable?

The price and inventory of FM25H20-DG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM25H20-DG is usually 5 days.

3.What payment methods are accepted for FM25H20-DG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM25H20-DG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FM25H20-DG?

FM25H20-DG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FM25H20-DG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FM25H20-DG?

For technical support, including FM25H20-DG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM25H20-DG requirements.

6.How does Aetrix verify that FM25H20-DG is sourced from the original manufacturer or authorized distributors?

All FM25H20-DG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM25H20-DG meets industry standards.

7.What is the process for return or replacement of FM25H20-DG?

All FM25H20-DG units undergo pre-shipment inspection (PSI). If there is an issue with FM25H20-DG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FM25H20-DG part is unused and in its original packaging.

Return procedure for FM25H20-DG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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