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Infineon Technologies FM25H20-G

Part No.:
FM25H20-G
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
8-SOIC (0.209", 5.30mm Width)
Datasheet:
AetrixFM25H20-G.pdf
Description:
IC FRAM 2MBIT SPI 40MHZ 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,793

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Product details

Overview

FM25H20-G from Infineon Technologies (formerly Cypress) is a 2-Mbit serial SPI F-RAM memory organized as 256 K × 8, featuring NoDelay™ writes, 1014 read/write endurance, 151-year data retention, 40-MHz SPI interface, and industrial-grade operation from –40 °C to +85 °C - deployed in real-time data logging, metering, and industrial control systems where rapid nonvolatile writes are critical.

For engineers reviewing the FM25H20-G datasheet, FM25H20-G pinout, FM25H20-G application, or FM25H20-G equivalent, key selection criteria include write latency (zero-cycle), endurance margin vs. EEPROM/flash, SPI mode 0/3 compatibility, hardware/software write protection granularity, and low-power sleep mode (3 µA) for battery-backed systems.

Technical Context

The FM25H20-G implements ferroelectric memory cells enabling true RAM-like random access with nonvolatile retention - eliminating erase cycles and polling delays inherent in flash/EEPROM. Its internal logic includes an 18-bit address counter, 3-bit status register with WPEN bit, and opcode decoder supporting WREN, WRDI, RDSR, WRSR, READ, WRITE, and HOLD commands.

It operates as a full-duplex SPI slave in Mode 0 (CPOL = 0, CPHA = 0) and Mode 3 (CPOL = 1, CPHA = 1), with SI latched on rising SCK edge and SO driven on falling edge. The HOLD pin suspends ongoing transfers without clock or CS dependency, provided transitions occur while SCK is LOW.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Mbit (256 K × 8); supports byte- and sequential-access writes without page boundaries or erase overhead.
Write Endurance1014 cycles; enables >27 years of continuous 100-Hz logging at full array depth without wear-out risk.
Data Retention151 years at +85 °C; validated per JEDEC JESD22-A117, eliminating periodic refresh or backup power requirements.
SPI SpeedUp to 40 MHz; achieves 4 MB/s peak throughput - 8× faster than typical 5-MHz EEPROMs for burst logging.
Supply Voltage2.7 V to 3.6 V; compatible with 3.3-V microcontroller I/O domains without level-shifting.
Standby Current80 µA (typ); reduces quiescent power in always-on sensor nodes during idle intervals.
Sleep Current3 µA (typ); enables multi-year battery life in energy-harvesting or coin-cell-powered devices.

Pinout & Package

FM25H20-G is available in two RoHS-compliant packages: 8-pin SOIC (width 3.9 mm) and 8-pin TDFN (3 mm × 3 mm, 0.5 mm pitch). Both packages feature identical pin functions and electrical characteristics.

Pin/TerminalCircuit RoleDesign Meaning
CSChip Select inputActive-low enable; places device in standby (tristated SO, 80 µA current) when HIGH; must fall before each opcode.
SCKSerial clock inputSynchronizes all SPI transfers; rising edge latches SI, falling edge drives SO; supports 0–40 MHz with arbitrary pauses.
SISerial inputReceives opcodes, addresses, and write data; must be held valid during active CS to meet IDD specs.
SOSerial outputDrives read data and status bits; high-impedance when CS HIGH or during HOLD assertion.
WPHardware write protectActive-low lock for Status Register when WPEN = 1; must be tied to VDD if unused to prevent accidental protection.
HOLDTransfer suspend controlPauses ongoing read/write without losing internal state; requires SCK LOW during assertion/deassertion.
VSSGround referenceSystem ground connection; required for stable operation and ESD path integrity.
VDDPower supply2.7–3.6 V main supply; powers core logic and F-RAM array; decoupling capacitor recommended near pin.

Key Features

FeatureDesign Value
NoDelay™ Write ArchitectureWrites complete within one SPI byte transfer cycle - no wait states, polling, or timeout handling required in firmware.
Block-Level Software ProtectionConfigurable via Status Register to lock 1/4, 1/2, or full memory array against accidental overwrite - independent of WP pin state.
Ferroelectric Memory ProcessEnables 1014 cycles and 151-year retention without charge-pump circuitry, reducing voltage stress and leakage paths.
SPI Mode FlexibilityNative support for both Mode 0 and Mode 3 eliminates need for software-level clock-phase inversion in host drivers.
Low-Power Sleep Mode3 µA current draw with retained memory state - ideal for wake-on-interrupt architectures in portable instrumentation.

Applications

Smart Energy MeteringIndustrial PLC Data Logging

Use Scenario: Continuous timestamped recording of voltage, current, and kWh consumption every 100 ms under mains power loss conditions.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory storing last-known valid readings during brownout, written at full SPI speed without interrupting measurement loop.

Use Value: Eliminates capacitor-based backup and flash wear leveling firmware, reducing BOM cost and qualification effort.

Use Scenario: Capturing sensor fault events and diagnostic snapshots in programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: High-endurance event buffer that survives >100 million write cycles across 15+ years of scheduled maintenance cycles.

Use Value: Guarantees deterministic 100-ns write latency per byte - preventing data loss during rapid transient detection.

Medical Wearable Sensor StorageAutomotive Telematics Black Box

Use Scenario: Storing ECG waveform segments and anomaly flags in battery-powered patch monitors with 3-year shelf life.

IC Role / Device Role / Timing Role: Low-voltage (2.7 V) nonvolatile memory retaining data through repeated deep-sleep cycles and cold storage.

Use Value: Achieves 3 µA sleep current and 151-year retention - enabling FDA-compliant long-term clinical data integrity.

Use Scenario: Recording vehicle CAN bus diagnostics, GPS coordinates, and crash-triggered pre-event buffers in telematics control units.

IC Role / Device Role / Timing Role: SPI-connected black box memory capturing 10-ms pre-crash telemetry without missing frames due to write stalls.

Use Value: Delivers zero-latency writes at 40 MHz - ensuring no packet loss during simultaneous CAN reception and storage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY14B102QN-SPSame F-RAM architecture, 2-Mbit density, but uses parallel interface (not SPI); requires 28-pin SOIC package and wider address/data bus.Suitable only for designs with parallel memory bus and space for larger footprint; not drop-in replaceable for SPI-only layouts.Select only when migrating legacy parallel-memory systems or requiring simultaneous multi-byte access.
AT25SF041-SSHD-B4-Mbit SPI flash with 100k-cycle endurance, 20-ms page-program time, and 20-year retention at 55 °C - lacks NoDelay™ and endurance margin.Acceptable for infrequent configuration storage, but unsuitable for high-frequency data capture due to write latency and wear limitations.Choose only for cost-sensitive, low-write-count applications where firmware can accommodate polling and wear leveling.

Compared with CY14B102QN-SP and AT25SF041-SSHD-B, FM25H20-G uniquely delivers zero-write-latency, 1014-cycle endurance, and 151-year retention in an 8-pin SPI package - making it the sole option for deterministic real-time nonvolatile logging without firmware complexity.

Availability

FM25H20-G is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, medical wearables, and automotive telematics requiring stable component supply across extended product lifecycles.

Supply support for FM25H20-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

The FM25H20-G belongs to Infineon's F-RAM portfolio - engineered specifically for applications demanding infinite write endurance, instant nonvolatile storage, and ultra-low power - replacing legacy serial flash and EEPROM where timing determinism and reliability are non-negotiable.

FAQ

Is FM25H20-G pin-compatible with standard SPI EEPROMs like AT25XXX series?

Yes - FM25H20-G uses identical 8-pin SOIC/TDFN footprints and matches the standard SPI pinout (CS, SCK, SI, SO, WP, HOLD, VDD, VSS). It accepts the same opcodes for READ and WRITE, and supports SPI modes 0 and 3. No PCB redesign is needed for drop-in replacement, though firmware must disable EEPROM-specific polling loops due to NoDelay™ writes.

Does FM25H20-G require external high-voltage programming or special write sequences?

No - FM25H20-G performs writes at standard VDD (2.7–3.6 V) with no charge pump or high-voltage generator. A single SPI WRITE command followed by data bytes completes the operation. Unlike flash or EEPROM, there is no erase step, no write-enable delay, and no status polling - data is committed immediately after the final clock edge of each byte.

How does the HOLD function interact with ongoing write operations?

When HOLD is asserted LOW during a write, the FM25H20-G freezes the internal address counter and data latch state, suspending the transfer without corruption. SCK and CS are ignored until HOLD returns HIGH while SCK is LOW. Upon resumption, the device continues from the exact byte position - preserving atomicity for multi-byte writes across CPU interrupts or priority tasks.

What is the impact of tying WP HIGH versus leaving it floating?

WP must be tied to VDD (not left floating) to ensure predictable behavior. If left unconnected, noise or leakage may cause intermittent low states, unintentionally locking the Status Register and blocking future write protection changes. Tying WP to VDD disables hardware write protection, allowing full software control via WRSR - the recommended configuration unless permanent hardware lock is required.

FM25H20-G Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
F-RAM™
Package/Case:
8-SOIC (0.209", 5.30mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Memory Size:
2Mbit
Memory Organization:
256K x 8
Memory Interface:
SPI
Clock Frequency:
40 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

FM25H20-G FAQ

1.How can I place an order for FM25H20-G through Aetrix?

Please submit a Request for Quotation (RFQ) for FM25H20-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FM25H20-G reliable?

The price and inventory of FM25H20-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM25H20-G is usually 5 days.

3.What payment methods are accepted for FM25H20-G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM25H20-G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FM25H20-G?

FM25H20-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FM25H20-G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FM25H20-G?

For technical support, including FM25H20-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM25H20-G requirements.

6.How does Aetrix verify that FM25H20-G is sourced from the original manufacturer or authorized distributors?

All FM25H20-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM25H20-G meets industry standards.

7.What is the process for return or replacement of FM25H20-G?

All FM25H20-G units undergo pre-shipment inspection (PSI). If there is an issue with FM25H20-G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FM25H20-G part is unused and in its original packaging.

Return procedure for FM25H20-G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FM25H20-G Tags

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