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Infineon Technologies FM25L04B-DGTR

Part No.:
FM25L04B-DGTR
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixFM25L04B-DGTR.pdf
Description:
IC FRAM 4KBIT SPI 20MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,078

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Product details

Overview

FM25L04B-DGTR from Infineon Technologies (formerly Cypress) is a 4-Kbit serial SPI F-RAM organized as 512 × 8, serving as nonvolatile memory with true RAM-like write performance in embedded control and data-logging systems. It delivers 1014 read/write endurance, 151-year data retention at +85 °C, NoDelay™ writes at up to 20 MHz SPI clock, and operates from 2.7 V to 3.6 V across –40 °C to +85 °C.

For engineers reviewing the FM25L04B-DGTR datasheet, FM25L04B-DGTR pinout, FM25L04B-DGTR application, or FM25L04B-DGTR equivalent, key selection criteria include guaranteed zero-write-latency operation, hardware/software write protection granularity (1/4, 1/2, full array), industrial temperature compliance, and direct SPI flash/EEPROM drop-in replacement capability without firmware changes.

Technical Context

The FM25L04B-DGTR implements a ferroelectric memory array with synchronous SPI slave interface supporting modes 0 (CPOL = 0, CPHA = 0) and 3 (CPOL = 1, CPHA = 1). All write operations complete within one SPI byte transfer cycle-no polling or delay required-and status register updates occur atomically with memory writes.

Its internal architecture includes dedicated instruction decoder, address counter, and nonvolatile status register with WEL bit; the HOLD pin enables deterministic transaction suspension while SCK is low, preserving bus state integrity during host interrupt servicing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size4 Kbit (512 × 8 bytes); enables compact storage for configuration, calibration, or event logs without external buffering.
SPI speedUp to 20 MHz; supports real-time logging at ≥2.5 MB/s effective write throughput with no wait states.
Write endurance1014 cycles; sustains >27,000 writes/sec continuously for 15+ years-eliminates wear-leveling firmware overhead.
Data retention151 years at +85 °C; ensures long-term reliability in unpowered industrial deployments without refresh circuitry.
Supply voltage2.7 V to 3.6 V; compatible with standard 3.3 V I/O domains and brown-out tolerant in battery-backed systems.
Operating temp–40 °C to +85 °C; qualified for use in motor drives, PLCs, and automotive body controllers without derating.
Active current200 µA at 1 MHz; reduces average power in duty-cycled sensor nodes versus EEPROM (typically >1 mA).
Standby current3 µA (typ); enables multi-year operation on coin-cell batteries when CS is deasserted between writes.

Pinout & Package

FM25L04B-DGTR is supplied in an 8-pin DFN package (3 mm × 2 mm, 0.5 mm pitch) with exposed pad (not connected). Pin functions are electrically identical to the SOIC variant but optimized for space-constrained PCB layouts.

Pin/TerminalCircuit RoleDesign Meaning
CSChip Select inputActive-low enable; device enters standby and tristates SO when HIGH-critical for multi-device SPI bus arbitration.
SCKSerial clock inputSynchronizes all SI/SO transfers; rising edge latches input, falling edge drives output-supports glitch-free mode 0/3 operation.
SISerial inputReceives opcodes, addresses, and write data; must be driven to valid logic level even during idle to meet IDD spec.
SOSerial outputDrives read data only during active read cycles; high-impedance otherwise-including during HOLD assertion.
WPHardware write protectActive-low lock; overrides software protection when asserted-enables fail-safe write disable in safety-critical subsystems.
HOLDBus hold controlPauses ongoing SPI transaction without clock stopping; requires SCK LOW before assertion to avoid bus corruption.
VDDPower supply2.7–3.6 V nominal; internal POR ensures reliable initialization-no external reset circuit needed.
VSSGround referenceSystem ground return; must be low-impedance path to minimize noise coupling into sensitive F-RAM cell array.

Key Features

FeatureDesign Value
NoDelay™ write executionWrites commit immediately after final bit transfer-enables deterministic latency ≤50 ns per byte, eliminating timeout handling in RTOS tasks.
Block-level software protectionConfigurable 1/4, 1/2, or full-array lock via WRSR command-supports hierarchical firmware update partitioning without hardware mods.
Dual SPI mode supportNative compatibility with both Mode 0 and Mode 3 masters-avoids level-shifter or GPIO-bitbang workarounds in legacy MCU designs.
Ferroelectric process reliability100 million × more endurance than EEPROM-removes need for wear-leveling algorithms in data-acquisition firmware stacks.
Low-voltage write assuranceValid operation down to 2.7 V with full timing specs-prevents partial writes during brown-out conditions common in 12 V automotive systems.

Applications

Industrial Data LoggerSmart Meter Firmware Storage

Use Scenario: Continuous timestamped sensor sampling (e.g., temperature, pressure) in factory-floor PLCs with power-loss risk.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory holding last-known-good values and incremental counters between mains cycles.

Use Value: Zero-latency writes capture every sample without buffer overflow-even during microsecond-scale power dips-leveraging 1014 endurance for >10-year field life.

Use Scenario: Storing tariff tables, billing registers, and cryptographic keys in ANSI C12.22-compliant electricity meters.

IC Role / Device Role / Timing Role: Secure, tamper-resistant configuration store interfaced directly to metering SoC's SPI controller.

Use Value: Hardware WP pin + software block lock prevents unauthorized firmware modification; 151-year retention meets utility 20-year deployment mandates.

Automotive Body Control ModuleMedical Diagnostic Equipment

Use Scenario: Recording door lock actuation history, mirror position presets, and lighting profiles in 12 V vehicle networks.

IC Role / Device Role / Timing Role: Power-fail resilient parameter storage synchronized to CAN message triggers via MCU GPIO.

Use Value: Operates reliably at 2.7 V during cranking transients; eliminates EEPROM rewrites that cause CAN bus jitter during critical diagnostics.

Use Scenario: Capturing calibration coefficients, usage logs, and patient session metadata in portable ultrasound devices.

IC Role / Device Role / Timing Role: High-integrity audit trail memory isolated from main application processor via dedicated SPI bus.

Use Value: 3 µA standby current extends battery runtime; 1014 cycles support >50,000 patient sessions without memory degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MB85RS4MT-FPNSE14-Mbit FRAM (1024 × 4096), 40 MHz SPI, 1.8–3.6 V supply, no HOLD pinLarger capacity but lacks HOLD functionality-unsuitable for host-interrupt-sensitive loggingSelect when higher density is required and interrupt-driven transaction suspension is not needed.
AT25SF041-SSHD-B4-Mbit serial NOR flash, 104 MHz QSPI, requires 25 ms erase/write, 100k enduranceRequires erase-before-write and polling; incompatible with real-time write constraintsChoose only if cost-per-bit is primary and deterministic latency is not required.

Compared with MB85RS4MT-FPNSE1 and AT25SF041-SSHD-B, FM25L04B-DGTR uniquely delivers sub-microsecond write commit, hardware HOLD support, and 1014 endurance in a pin-compatible 8-pin DFN-making it the sole option for latency-critical, high-cycle-count industrial logging where flash/EEPROM alternatives introduce firmware complexity or reliability risk.

Availability

FM25L04B-DGTR is available at Aetrix Electronics and suitable for industrial data loggers, smart meter firmware storage, automotive body control modules, and medical diagnostic equipment requiring stable component supply over extended production lifecycles.

Supply support for FM25L04B-DGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

The FM25L04B-DGTR belongs to Infineon's F-RAM product line, engineered specifically to replace serial flash and EEPROM in applications demanding unlimited write cycles, zero write latency, and long-term data integrity without system-level wear management.

FAQ

Does FM25L04B-DGTR require external pull-up resistors on SI, SO, or HOLD pins?

No. The FM25L04B-DGTR has internal weak pull-ups on HOLD and WP pins only; SI and SO are actively driven and do not require external termination. External pull-ups on SI/SO may cause signal integrity issues or exceed VIH/VIL thresholds under high-speed operation.

Can FM25L04B-DGTR be used as a direct replacement for AT25DF041A without firmware changes?

Yes-FM25L04B-DGTR shares identical pinout, SPI command set (WREN, WRITE, READ, RDSR), and timing structure with AT25DF041A. No code modifications are needed beyond verifying VDD range compatibility (2.7–3.6 V vs. 2.7–3.6 V) and removing EEPROM-style polling loops.

What is the impact of the documented WEL bit errata on memory writes to addresses 0x100–0x1FF?

The WEL bit remains set after writes to 0x100–0x1FF, requiring explicit WRDI before subsequent writes to other pages. This does not corrupt data but mandates strict status register management in firmware-unlike normal operation where WEL auto-clears post-write.

Is the exposed pad on the DFN package electrically connected or thermally functional?

The exposed pad on FM25L04B-DGTR's DFN package is a no-connect terminal-not bonded to die or substrate. It must remain unsoldered per datasheet guidance to prevent mechanical stress or unintended grounding paths that could compromise ESD robustness.

FM25L04B-DGTR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
F-RAM™
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Memory Size:
4Kbit
Memory Organization:
512 x 8
Memory Interface:
SPI
Clock Frequency:
20 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (4x4.5)

FM25L04B-DGTR FAQ

1.How can I place an order for FM25L04B-DGTR through Aetrix?

Please submit a Request for Quotation (RFQ) for FM25L04B-DGTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FM25L04B-DGTR reliable?

The price and inventory of FM25L04B-DGTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM25L04B-DGTR is usually 5 days.

3.What payment methods are accepted for FM25L04B-DGTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM25L04B-DGTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FM25L04B-DGTR?

FM25L04B-DGTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FM25L04B-DGTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FM25L04B-DGTR?

For technical support, including FM25L04B-DGTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM25L04B-DGTR requirements.

6.How does Aetrix verify that FM25L04B-DGTR is sourced from the original manufacturer or authorized distributors?

All FM25L04B-DGTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM25L04B-DGTR meets industry standards.

7.What is the process for return or replacement of FM25L04B-DGTR?

All FM25L04B-DGTR units undergo pre-shipment inspection (PSI). If there is an issue with FM25L04B-DGTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FM25L04B-DGTR part is unused and in its original packaging.

Return procedure for FM25L04B-DGTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FM25L04B-DGTR Tags

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